Q:What atomic ratio for Si/C in SiC ?

Q:What atomic ratio for Si/C in SiC ?
A:Atomic ratio for Si/C in SiC is 1:1

2018-06-19

Q: 4″ AlGaAs epi wafers for IR LEDs, 850nm or 620nm

Q:Can you supply 4″ AlGaAs epi wafers for IR LEDs? A:Yes, we can offer 850nm or 620nm for 4” size.

2018-06-19meta-author AlGaAs epi, IR LEDs

Q:We are using 40×40 mil size and 45×45 mil size chips for 1W . And 45×22 or 38x22mil size for 0,5w . Eff. is min. 120lm/w , package form is 3535 ceramic no lens flat type, and 5050 smd flat type.Cct 6500k, cri min 70-75, drive current 350 mA ( it can be change if you have suggest for it ), can you give us suggestion?

Q:We are using 40×40 mil size and 45×45 mil size chips for 1W . And 45×22 or 38x22mil size for 0,5w . Eff. is min. 120lm/w , package form is 3535 ceramic no lens flat type, and 5050 smd flat type.Cct 6500k, cri min 70-75, [...]

2018-06-19meta-author

Q : does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project.

Q : does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project. A:Sorry, we can not offer fabrication of p and n [...]

2018-06-19meta-author

For 4” pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flip chip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. Is it possible you can share any image of the etched surface of pss?

Q:For 4” pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flip chip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. Is it possible you can share any image of the etched surface of [...]

2018-06-19meta-author

The epitaxial wafer on pss substrate is attractive to me, so I want to know the overall efficiency it can deliver. Could you please tell me an efficiency number (lm/w or cd/A or EQE) of the device based on a structure similar to the picture in your email?

Q: The epitaxial wafer on pss substrate is attractive to me, so I want to know the overall efficiency it can deliver. Could you please tell me an efficiency number (lm/w or cd/A or EQE) of the device based on a structure similar to [...]

2018-06-06meta-author

Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation?

Q: Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation? A:Yes!

2018-06-19meta-author

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

Q:What atomic ratio for Si/C in SiC ?

Q:What atomic ratio for Si/C in SiC ?

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Related Posts

Q: 4″ AlGaAs epi wafers for IR LEDs, 850nm or 620nm

Q : does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project.

For 4” pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flip chip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. Is it possible you can share any image of the etched surface of pss?

The epitaxial wafer on pss substrate is attractive to me, so I want to know the overall efficiency it can deliver. Could you please tell me an efficiency number (lm/w or cd/A or EQE) of the device based on a structure similar to the picture in your email?

Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation?

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers