Q:What atomic ratio for Si/C in SiC ?
A:Atomic ratio for Si/C in SiC is 1:1
Q:What atomic ratio for Si/C in SiC ?
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Q:We are using 40×40 mil size and 45×45 mil size chips for 1W . And 45×22 or 38x22mil size for 0,5w . Eff. is min. 120lm/w , package form is 3535 ceramic no lens flat type, and 5050 smd flat type.Cct 6500k, cri min 70-75, drive current 350 mA ( it can be change if you have suggest for it ), can you give us suggestion?
Q:We are using 40×40 mil size and 45×45 mil size chips for 1W . And 45×22 or 38x22mil size for 0,5w . Eff. is min. 120lm/w , package form is 3535 ceramic no lens flat type, and 5050 smd flat type.Cct 6500k, cri min 70-75, [...]
Q:Our application will be making micro-pillar arrays based on the MQWs for high brightness LEDs and its wavelength tuning. So we do not really care the emission wavelength you provide but we will mind whether the process and emission wavelength would be consist between wafers in one pack as well as the uniformity in one wafer. No metal contact would be perfect as we will employ high temperature process in our application. Do you offer the wafer dicing service as well?
Q:Our application will be making micro-pillar arrays based on the MQWs for high brightness LEDs and its wavelength tuning. So we do not really care the emission wavelength you provide but we will mind whether the process and emission wavelength would be consist between [...]
Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium composition? Any In segregation or clusters?
Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium [...]
Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing?
Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing? A: Thermal Conductivity> 490 W/mK is theory value of SiC mono, however we tested some wafers, the thermal conductivity is below [...]
Q We actually want to check our reflectance (mirror type) measurement method on an LED structure on a PSS wafer. Would it be possible to get the same LED structure on both a PSS wafer and a single-side polished wafer so we can compare the two directly?
Q We actually want to check our reflectance (mirror type) measurement method on an LED structure on a PSS wafer. Would it be possible to get the same LED structure on both a PSS wafer and a single-side polished wafer so we can compare [...]
Q:I was wondering if you carried any semi-insulating(not doped)SiC or single crystal HPSI SiC?
Q:I was wondering if you carried any semi-insulating(not doped)SiC or single crystal HPSI SiC? A: For our semi-insulating SiC substrate, it is V doped, we can not offer High Purity semi-insulating SiC, however we can offer undoped SiC if your quantity is good.