Q:What atomic ratio for Si/C in SiC ?
A:Atomic ratio for Si/C in SiC is 1:1
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I am not sure whether practically LLO can be done on the PSS given it is not a flat surface
Q: I am not sure whether practically LLO can be done on the PSS given it is not a flat surface A: “laser lift-off” actually is according to “NL layer” as below image. If the NL layer is GaN layer, when it is heating to constant high [...]
2018-06-19meta-author
What is the highest temperature and the highest thermal shock that the wafers can withstand?
Q: What is the highest temperature and the highest thermal shock that the wafers can withstand? A: At the temperatures higher than 1000 C on the free surface of Si-face of 6H-SiC (0001) the carbon segregation properties are started so that during short time the thin [...]
2012-06-06meta-author
Q:Our application will be making micro-pillar arrays based on the MQWs for high brightness LEDs and its wavelength tuning. So we do not really care the emission wavelength you provide but we will mind whether the process and emission wavelength would be consist between wafers in one pack as well as the uniformity in one wafer. No metal contact would be perfect as we will employ high temperature process in our application. Do you offer the wafer dicing service as well?
Q:Our application will be making micro-pillar arrays based on the MQWs for high brightness LEDs and its wavelength tuning. So we do not really care the emission wavelength you provide but we will mind whether the process and emission wavelength would be consist between [...]
2018-06-19meta-author
Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium composition? Any In segregation or clusters?
Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium [...]
2018-06-19meta-author
1550 high power EPI structure
Q: Could you please provide information about standard epi structure of InGaAsP/InP wafer? A: Here we only can offer you general structure: Layer Material 6 InP 5 GaInAs 4 GaInAsP 3 InP 2 AlGaInAs MQW PL 1500-1560nm 1 InP buffer InP substrate
2018-06-19meta-author
epi wafer, InGaAsP, laser diode
Q:Do you sell SiC wafers that are not (0001) plane? For example, (11-20)?
Q:Do you sell SiC wafers that are not (0001) plane? For example, (11-20)? A:We can offer a-plane, but the size would be smaller,and should require quantity, do you have size requirement?
2018-06-19meta-author