PAM XIAMEN offers 8″ FZ Prime Silicon Wafer. 1. Specification of 8″ FZ Prime Silicon Wafer 8″ 200+/-0.2 mm Double Side Polished Prime FZ N type resistivity 8000-14000Ωcm orientation 100 ±0.5° Thickness 625 +/- 5µm Laser Mark None or SEMI edge profile SEMI Notch SEMI [...]
2019-06-28meta-author
Group III nitride materials are a kind of direct band gap materials, which have the advantages of wide band gap, strong chemical stability, high breakdown electric field and high thermal conductivity. They have broad application prospects in the fields of efficient light-emitting devices and [...]
2022-11-25meta-author
PAM XIAMEN offers6″ FZ Silicon Wafer-5 Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm, FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm, Warp<60μm, One-side-polished, Particles: ≤10@≥0.3μm, MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched, Tarnish, orange peel, contamination, haze, micro scratch, chips, edge chips, crack, crow feet, pin hole, pits, dent, waviness, smudge&scar on [...]
2019-09-19meta-author
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ). PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation. 5″ Diameter Wafers [...]
2019-05-15meta-author
Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ [...]
PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs / GaAs LED epi wafer with wavelength 850-880 nm and 890-910nm: 1. Red Infrared AlGaAs / GaAs LED Epi Wafer PAM-190723-LED Structure Thickness, um Type Composition CC, cm-3 Wide-gap window 1 р AlхGa1-хAs (х=0,25-0,3) (2-5) ∙1018 Barrier layer 0.06 р AlхGa1-хAs (х=0,25-0,3) (0.8-1) ∙1018 Active layer – GaAs undoped – Al0,2Ga0,8As Barrier layer 0.06 n AlхGa1-хAs (х=0,25-0,3) (0.5-1) ∙1017 Wide-gap window 6 n AlхGa1-хAs (1-2)∙1018 (х=0,3-0,35) Stop layer 0.1 – AlхGa1-хAs – (х=0,9-1) Buffer layer – n GaAs – Substrate – n+ GaAs – 2. Where is the [...]
2020-05-18meta-author