Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]
2014-04-02meta-author
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-3 6″ FZ Si wafer, 75pcs Orientation: (100)±0.5 Type/Dopant: n/phosphorus Resistivity: 1-5 Ω-cm Life time : > 1000 μs Thickness: 400 ± 25 μm Carbon (atm/cm3): <2.0 x 1016 Oxygen (atm/cm3): < 2 x 1016 Diameter: 150 mm Primary flat: Semi Std Secondary flat: not essential Front and back side Finish: [...]
2020-04-23meta-author
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 2″ 279 P/E FZ >1,000 p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [111] ±0.5° 2″ 500 P/P FZ 5,000-6,500 SEMI Test (in unsealed cassette) p-type Si:B [111] ±0.5° 2″ 275 P/E FZ 3,000-5,000 SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers p-type Si:B [111-7° towards[110]] ±0.5° 2″ 279 P/P FZ >2,000 SEMI Prime p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI, Soft cst p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI TEST (Scratched), Soft cst p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI [...]
2019-03-07meta-author
PAM XIAMEN offers KTaO3 Potassium Tantalate Crystal Substrates. Formula KTaO3 Point group m3m Cell parameters 0.3984nm Melting point 1352.2 ℃ Density 7.025 g/cm3 Mohs hardness 6 Growth method Czochralski method Refractive index 2.226@633nm, 2.152@1539nm Coefficient of thermal expansion 4.027 x 10-6/K Specific heat (temperature J/(K g) 0.378 Transparent bands (nm) 380~4000 Crystal orientation <100>, <110>, <111> Regular size 20x20x0.5mm, 10x10x0.5mm, 5x5x0.5mm, other sizes are available upon request For more information, please visit our website: [...]
2019-03-12meta-author
PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(111). 2″ Diameter Wafer 2″ wafers(111) Ge <111> undoped Ge Wafer . Undoped, 2″ dia x 0.5 mm, 1SP (111) R >50 ohm.cm Ge Wafer . Undoped, 2″ dia x 0.5 mm, 2SP (111) R >50 Ohm.cm Ge<111> [...]
2019-04-23meta-author
PAM XIAMEN offers4″ Silicon EPI Wafer-6 4″ Si epi wafer Structure: (Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate) Top layer intrinsic Si: Resistivity≥50Ωcm, Thickness 5μm, Residual carrier concentration<1×1014/cm3 Middle layer Phosphorus Doped: Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3), Thickness 20μm, Residual carrier concentration<2.1×1013/cm3 Layer with Ion Implantation: handled [...]
2019-11-01meta-author