Wide Band Gap semiconductors

Wide Band Gap semiconductors

PAM XIAMEN offers Wide Band Gap semiconductors.

Wide Band Gap semiconductors (WBG or WBGS) are semiconductor materials with relatively large band gaps compared to typical semiconductors. A typical semiconductor such as silicon has a band gap of 1-1.5 electron volts (eV), while a broadband gap material has a band gap of 2-4 eV. In general, wideband gap semiconductors have electronic properties between typical semiconductors and insulators. SiC and GaN are typical Wide Band Gap materials.

If you need more information about SiC and GaN, please visit:

SiC: https://www.powerwaywafer.com/sic-wafers

GaN: https://www.powerwaywafer.com/gan-wafer

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

Share this post