150mm Germanium Substrate and ingot
Xiamen Powerway Advanced Material Co.,Ltd., offers monocrystal or polycrystalline150mm Germanium Substrate and ingots for Optical application or for epi-growth in microelectronics, please see below detail specification:
No.1:Germanium Substrate, undoped
Prime Grade PAM-190725-GE
Diameter: 6”dia.
Intrinsic undoped Ge,
(100) or (111)+/-0.5deg.
Resistivity>30 Ohm.cm,
Thickness:500±25µm,
SEMI Standard
TTV<5µm
Both-sides-polished,
Sealed in Empak or equivalent cassette.
No.2 Germanium substrate, p type
Prime Grade PAM-190711-GE
Diameter: 6”dia.
P type/Ga doped,
(100) +/-0.5deg.
Resistivity: (0.005~0.05) Ohm.cm,
Thickness:500±25µm,
SEMI Standard
Single-sides-polished,
Sealed in Empak or equivalent cassette.
No.3. Germanium substrate for optics
Optical Grade PAM-190709-GE
Diameter: 6”dia.
(100) +/-0.5deg.
Thickness:2000±25µm,
Both-sides-polished
No.4.Germanium Ingot
Single crystal PAM-190423-GE
Diameter: 6”dia.
Type: p type/Ga doped
(100) +/-1deg.
Thickness:75mm
No.5. Polycrystalline Germanium Substrate PAM190709-GE
Purity:>=99.999%
N type
Size:60mm x 8mm
Thickness:1000um
Double side polished
For more information, please send us email at victorchan@powerwaywafer.com or powerwaymaterial@gmail.com