YAG Crystals-1

PAM XIAMEN offers Nd YAG Nd Doped Yttrium Aluminium Garnet Laser Crystal.

Main Specifications
dimensional tolerance: Dia:< +/-0.025 mm ,length: < +/-0.5 mm
flatness: λ/8 @633nm
Surface fineness: 10/5
flatness: 20 arc sec.
verticality: 5 arc min
orientation: <111> crystalline direction,< +/-0.5°
coating film: AR coating, HR Coating
reflect: R<0.2%@1064, HR:R>99.8%@1064,R<5%@808nm,
clear aperture: >95% central area
wavefront distortion: <7mm diameter : <λ/8 per inch @ 633nm,
7mm diameter : <λ/10per inch @ 633nm

Publications related to YAG laser crystals: 

[1] J. E. Geusic et al., “Laser oscillations in Nd-doped yttrium aluminum, yttrium gallium and gadolinium garnets”, Appl. Phys. Lett. 4 (10), 182 (1964)
[2] D. Y. Shen et al., “Highly efficient in-band pumped Er:YAG laser with 60 W of output at 1645 nm”, Opt. Lett. 31 (6), 754 (2006)
[3] J. W. Kim et al., “Fiber-laser-pumped Er:YAG lasers”, IEEE Sel. Top. Quantum Electron. 15 (2), 361 (2009)
[4] Li Chaoyang et al., “106.5 W high beam quality diode-side-pumped Nd:YAG laser at 1123 nm”, Opt. Express 18 (8), 7923 (2010)
[5] X. Délen et al., “34 W continuous wave Nd:YAG single crystal fiber laser emitting at 946 nm”, Appl. Phys. B 104 (1), 1 (2011)
[6] H. C. Lee et al., “Diode-pumped continuous-wave eye-safe Nd:YAG laser at 1415 nm”, Opt. Lett. 37 (7), 1160 (2012)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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