PAM XIAMEN offers Nd YAG Nd Doped Yttrium Aluminium Garnet Laser Crystal.
|dimensional tolerance：||Dia：< +/-0.025 mm ,length: < +/-0.5 mm|
|flatness：||20 arc sec.|
|verticality：||5 arc min|
|orientation：||<111> crystalline direction,< +/-0.5°|
|coating film：||AR coating, HR Coating|
|clear aperture：||>95% central area|
|wavefront distortion：||<7mm diameter : <λ/8 per inch @ 633nm,|
|7mm diameter : <λ/10per inch @ 633nm|
Publications related to YAG laser crystals:
|||J. E. Geusic et al., “Laser oscillations in Nd-doped yttrium aluminum, yttrium gallium and gadolinium garnets”, Appl. Phys. Lett. 4 (10), 182 (1964)|
|||D. Y. Shen et al., “Highly efficient in-band pumped Er:YAG laser with 60 W of output at 1645 nm”, Opt. Lett. 31 (6), 754 (2006)|
|||J. W. Kim et al., “Fiber-laser-pumped Er:YAG lasers”, IEEE Sel. Top. Quantum Electron. 15 (2), 361 (2009)|
|||Li Chaoyang et al., “106.5 W high beam quality diode-side-pumped Nd:YAG laser at 1123 nm”, Opt. Express 18 (8), 7923 (2010)|
|||X. Délen et al., “34 W continuous wave Nd:YAG single crystal fiber laser emitting at 946 nm”, Appl. Phys. B 104 (1), 1 (2011)|
|||H. C. Lee et al., “Diode-pumped continuous-wave eye-safe Nd:YAG laser at 1415 nm”, Opt. Lett. 37 (7), 1160 (2012)|
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.