YAG( undoped ,Ce-doped,Nd-doped)

PAM XIAMEN offers YAG( undoped ,Ce-doped,Nd-doped).

YAG (undoped)

Undoped YAG is a substrate material that can be used for UV and IR optics. Sapphire has been the substrate of choice for these applications; however it is difficult to polish Sapphire to a 10-5 scratch-dig finish,and is also slightly birefringent. YAG is non-birefringent and can be polished to a 10-5 scratch surface quality.

Structure Lattice (A) Melting Point oC  Density g/cm 3 Hardness Mohs Refractive index Transmition Range  Thermo-Expans  Damage Threshold  Thermo-Conductivity Dn/dt C-1
Cubic a=12.01 1950  4.55  8-8.5  1.82@1.06 250-5k nm  6.9×10-6  > 15Jcm-2 13 W 10-6 7.4×10-6

 

YAG (100) 10x10x0.5mm, 1sp

YAG (100) 10x10x0.5mm, 2sp

YAG (100) 10x10x1.0mm, 1sp

YAG (111) 10x10x0.5mm, 1sp

YAG (111) 10x10x0.5mm, 2sp

YAG (110) 10x10x0.5mm, 1sp

YAG (110) 10x10x0.5mm, 2sp

YAG (100) 2″ diax0.5mm, 1sp

 

YAG: Ce doped

Ce:YAG substrate (111) 5 x 5 x 0.5 mm, 2sp

Ce:YAG substrate (111) 10x10x 0.2 mm, 2sp

Ce:YAG substrate (111) 10x10x 0.5 mm, 2sp

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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