PAM XIAMEN offers YAG( undoped ,Ce-doped,Nd-doped).
Undoped YAG is a substrate material that can be used for UV and IR optics. Sapphire has been the substrate of choice for these applications; however it is difficult to polish Sapphire to a 10-5 scratch-dig finish,and is also slightly birefringent. YAG is non-birefringent and can be polished to a 10-5 scratch surface quality.
|Structure||Lattice (A)||Melting Point oC||Density g/cm 3||Hardness Mohs||Refractive index||Transmition Range||Thermo-Expans||Damage Threshold||Thermo-Conductivity||Dn/dt C-1|
|Cubic||a=12.01||1950||4.55||8-8.5||[email protected]||250-5k nm||6.9×10-6||> 15Jcm-2||13 W 10-6||7.4×10-6|
YAG (100) 10x10x0.5mm, 1sp
YAG (100) 10x10x0.5mm, 2sp
YAG (100) 10x10x1.0mm, 1sp
YAG (111) 10x10x0.5mm, 1sp
YAG (111) 10x10x0.5mm, 2sp
YAG (110) 10x10x0.5mm, 1sp
YAG (110) 10x10x0.5mm, 2sp
YAG (100) 2″ diax0.5mm, 1sp
YAG: Ce doped
Ce:YAG substrate (111) 5 x 5 x 0.5 mm, 2sp
Ce:YAG substrate (111) 10x10x 0.2 mm, 2sp
Ce:YAG substrate (111) 10x10x 0.5 mm, 2sp
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.