Zirconium Substrate & Foil ( Polycrystalline )

PAM XIAMEN offers Zirconium Substrate & Foil ( Polycrystalline ).

Zr – Polycrystalline Substrate: 10 x 10 x0.5 mm, One sides polished

Polycrystallline  Zr substrate
Purity:                          99.5%
Density:    6.52 g/cm3
Melting Point:    1855ºC
Average Grain Size:      10~50 Microns  ( No annealling )
Substrate dimension:     10 x 10 x0.5 mm
Polishing:                     One side polished and One  sides as cool rolling

Zr – Polycrystalline Metallic Foil: 0.08mm thick x 200mm Width x 400 mm Length

Polycrystal Zr  metallic Foil
Density:    6.52 g/cm3
Melting Point:    1855ºC
Purity:   > 99.5%
Size:     0.08mm thickness x 200 mm width x 400 mm Length 
Surface finish:  as cold rolling  < 50 A

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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