PAM XIAMEN offers ZnO/Au/Cr coated Si substrate.
ZnO/Au/Cr coated Si substrate ,4″x0.525 mm,1sp P-type B-doped,(ZnO=150nm,Au=150nm,Cr=20-40nm)
Silicon Wafer Specifications:
Film: ZnO/Au/Cr coated Si substrate ,4″x0.525 mm,1sp P-type B-doped,
ZnO =150 nm ,ZnO film: c-axis, medium (001) orientation
Au/Cr film: highly (111) orientation Au=150nm Cr(Glue layer)=20-40nm
Si(100) P type B doped ~525 um Prime Grade
Resistivity: 1-10 ohm.cm
Substrate Size: 4″ diameter +/- 0.5 mm x 0.5 mm
Polish: one side polished
Surface roughness: < 20 A RMS
Maximum Thermal Budget of Pt film: 250 degree C
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.