ZnO/Au/Cr film on Si

PAM XIAMEN offers ZnO/Au/Cr coated Si substrate.

ZnO/Au/Cr coated Si substrate ,4″x0.525 mm,1sp P-type B-doped,(ZnO=150nm,Au=150nm,Cr=20-40nm)

Silicon Wafer Specifications:
Film:         ZnO/Au/Cr coated Si substrate ,4″x0.525 mm,1sp  P-type B-doped,
ZnO =150 nm ,ZnO film: c-axis, medium (001) orientation  
Au/Cr film: highly (111) orientation  Au=150nm    Cr(Glue layer)=20-40nm
Si(100) P type B doped ~525 um Prime Grade
Resistivity:                  1-10 ohm.cm 
Substrate Size:            4″ diameter +/- 0.5 mm x 0.5 mm
Polish:                        one side polished
Surface roughness:      < 20 A RMS
Maximum Thermal Budget of Pt film: 250 degree C

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

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