PAM XIAMEN offers single crystal undoped or Ga-doped ZnO wafer substrate, which is grown by hydrothermal method under high pressure.There are two structures mainly in ZnO wafer: Hexagonal wurtzite and cubic zinc blende, what we offered is Hexagonal wurtzite.
1.Properties of ZnO Wafer:
1.1 General Properties of ZnO Monocristallyne Substrate
| Purity wt% | > 99.99 |
| Impurity: wt% | Mg: <.0005 Al: < .0030 Si: 0.0030 Ti: .0010 Cu: < .0030 Fe: < 0.005 Ca: <.0005 Ag: < .0002 |
| Crystal Structure | Hexagonal: a= 3.252 å , c = 5.207 å |
| Lattice parameters | a=3.252Å c=5.313 Å |
| Growth Method | Hydrothermal |
| Hardness | 4 moh scale |
| Density | 5.7 g/cm3 |
| Melt Point | 1975 oC |
| Specific heat | 0.125 cal/gm |
| Thermoelectric Constant | 1200 mV /oK @ 300 oC |
| Thermal conductivity | 0.006 cal/cm/ oK |
| Thermal Expansion Coefficient(CTE) | 6.5 x 10^-6 /℃ along a axis 3.7 x 10^-6 /℃along c axis |
| Seebeck coefficient | 0.006 Cal/cm/K |
| Transmission range | 0.4 – 0.6 m > 50% at 2 mm |
| Dislocation Density | <0001> plane <100 / cm2 |
2.0 Standard Substrate
| Orientation | <0001>, <11-20>, <10-10>± 0.5o or custom orientation |
| Polished surface | EPI polished on one side or two sides，Ra < 5 Å |
| Standard Size | 5 x 5 mm,10×10 mm,20×20 mm and 25×25 mm |
| Thickness | 0.35 mm, 0.5 mm and 1.0 mm |
| Surface roughness | Ra < 5A (AFM surface roughness measurement) |
| Surface polishing | Single side polished (SSP) or double side polished (DSP) |
2-1. undoped ZnO Wafer Substrates — C plate
ZnO (0001) 5x5x0.5mm, O-face 1SP
ZnO (0001) 10x10x0.5mm, 1sp Zn-Face Polished
ZnO (0001) 5x5x0.2mm, 2sp
ZnO (0001) 5x5x0.5mm, 1sp Zn face polished
ZnO (0001) 5x5x0.5mm, 2sp
ZnO (000-1) 10x10x0.2 mm, 1sp O-face polished
ZnO (000-1) 10x10x0.5mm, 1sp O-Face Polished
ZnO (0001) 10x10x0.5mm, 2sp
ZnO (000-1) 10x10x1.0 mm, 1sp Oxygen-face polished
ZnO (0001) 10x10x1.0 mm, 1sp Zn-face polished
ZnO (0001) 10x10x1.0 mm, 2sp
ZnO (000-1) 20x20x0.2 mm, 1sp O-face polished
ZnO (000-1) 20x20x0.5mm, 1sp O-Face Polished
ZnO (0001) 20x20x0.5mm, 2sp
ZnO (000-1) 20x20x1.0 mm, 1sp Oxygen-face polished
ZnO (0001) 20x20x1.0 mm, 1sp Zn-face polished
ZnO (0001) 20x20x1.0 mm, 2sp
ZnO (0001) 25.4dia. x0.5mm, double side polished (Zn-face epi polished)
2-2. Undoped ZnO Wafer Substrate — A Plate
ZnO (11-20) A-plane 5x5x0.5mm, 1sp
ZnO (11-20) A-plane 5x5x0.5mm, 2sp
ZnO (11-20) A-plane 10x10x0.5mm, 1sp
ZnO (11-20) A-plane 10x10x1.0mm, 1sp
ZnO (11-20) A-plane 10x10x1.0mm, 2sp
ZnO (11-20) A-plane 10x10x0.5mm, 2sp
2-3. Undoped ZnO Wafer Substrates — M Plate
ZnO (1-100) M-plane 5x5x0.5mm, 1sp
ZnO (1-100) M-plane 5x5x0.5mm, 2sp”
ZnO (1-100) M-plane 10x10x0.5mm, 1sp
ZnO (1-100) M-plane 10x10x0.5mm, 2sp
2-4. Undoped ZnO Wafer — (10-10)
ZnO (10-10) 10x10x0.5mm, 1sp
ZnO (10-10) 10x10x0.5mm, 2sp
2-5. Ga doped ZnO Wafer
Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished
Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished
Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished
Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished
Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished
Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished
Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished
ZnO (0001), N+ type, Ga doped, 5x5x0.5mm, O-face 1SP
ZnO (0001), N+ type, Ga doped, 10x10x0.5mm, 1sp Zn-Face Polished
ZnO (0001), N+ type, Ga doped, 5x5x0.2mm, 2sp
ZnO (0001) , N+ type, Ga doped,5x5x0.5mm, 1sp Zn face polished
ZnO (0001) N+ type, Ga doped,5x5x0.5mm, 2sp
ZnO (000-1) N+ type, Ga doped,10x10x0.2 mm, 1sp O-face polished
ZnO (000-1) N+ type, Ga doped, 10x10x0.5mm, 1sp O-Face Polished
ZnO (0001) N+ type, Ga doped,10x10x0.5mm, 2sp
ZnO (000-1) N+ type, Ga doped,10x10x1.0 mm, 1sp Oxygen-face polished
ZnO (0001) N+ type, Ga doped,10x10x1.0 mm, 1sp Zn-face polished
ZnO (0001) N+ type, Ga doped,10x10x1.0 mm, 2sp
ZnO (000-1) 20x20x0.2 mm, 1sp O-face polished
ZnO (000-1) N+ type, Ga doped, 20x20x0.5mm, 1sp O-Face Polished
ZnO (0001) N+ type, Ga doped, 20x20x0.5mm, 2sp
ZnO (000-1) N+ type, Ga doped,20x20x1.0 mm, 1sp Oxygen-face polished
ZnO (0001) N+ type, Ga doped,20x20x1.0 mm, 1sp Zn-face polished
ZnO (0001) N+ type, Ga doped,20x20x1.0 mm, 2sp
3. Resistivity of ZnO Wafer:
For high purity undoped ZnO substrate, the resistivity can be 100~500ohm.cm or (0.1～1)ohm.cm. due to different growth process method. For Ga-doped ZnO wafer, the resistivity should be (0.1~1)ohm.cm.
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com