ZnO wafer

ZnO wafer

PAM XIAMEN offers single crystal undoped or Ga-doped ZnO wafer substrate, which is grown by hydrothermal method under high pressure.

1.Properties of ZnO Wafer:

General Properties

Purity wt% > 99.99
Impurity: wt% Mg: <.0005 Al: < .0030 Si: 0.0030 Ti: .0010 Cu: < .0030
Fe: < 0.005 Ca: <.0005 Ag: < .0002
Crystal Structure Hexagonal: a= 3.252 å ,  c = 5.207 å
Lattice parameters a=3.252Å    c=5.313 Å
Growth Method Hydrothermal
Hardness 4 moh scale
Density 5.7 g/cm3
Melt Point 1975 oC
Specific heat 0.125 cal/gm
Thermoelectric Constant 1200 mV /oK @ 300 oC
Thermal conductivity 0.006 cal/cm/ oK
Thermal Expansion Coefficient(CTE) 6.5 x 10^-6 /℃ along a axis     3.7 x 10^-6 /℃along c axis
Seebeck coefficient 0.006 Cal/cm/K
Transmission range 0.4 – 0.6 m > 50% at 2 mm
Dislocation Density <0001> plane <100 / cm2

Standard Substrate

Orientation <0001>, <11-20>, <10-10>± 0.5o or custom orientation
Polished surface EPI polished on one side or two sides,Ra < 5 Å
Standard Size 5 x 5 mm,10×10 mm,20×20 mm and 25×25 mm
Thickness 0.35 mm, 0.5 mm and 1.0 mm
Surface roughness Ra < 5A (AFM surface roughness measurement)
Surface polishing Single side polished (SSP) or double side polished (DSP)

 

2-1. undoped ZnO Wafer Substrates — C plate

ZnO (0001) 5x5x0.5mm, O-face 1SP
ZnO (0001) 10x10x0.5mm, 1sp Zn-Face Polished
ZnO (0001) 5x5x0.2mm, 2sp
ZnO (0001) 5x5x0.5mm, 1sp Zn face polished
ZnO (0001) 5x5x0.5mm, 2sp
ZnO (000-1) 10x10x0.2 mm, 1sp O-face polished
ZnO (000-1) 10x10x0.5mm, 1sp O-Face Polished
ZnO (0001) 10x10x0.5mm, 2sp
ZnO (000-1) 10x10x1.0 mm, 1sp Oxygen-face polished
ZnO (0001) 10x10x1.0 mm, 1sp Zn-face polished
ZnO (0001) 10x10x1.0 mm, 2sp
ZnO (000-1) 20x20x0.2 mm, 1sp O-face polished
ZnO (000-1) 20x20x0.5mm, 1sp O-Face Polished
ZnO (0001) 20x20x0.5mm, 2sp
ZnO (000-1) 20x20x1.0 mm, 1sp Oxygen-face polished
ZnO (0001) 20x20x1.0 mm, 1sp Zn-face polished
ZnO (0001) 20x20x1.0 mm, 2sp
ZnO (0001) 25.4dia. x0.5mm, double side polished (Zn-face epi polished)

2-2. Undoped ZnO Wafer Substrate — A Plate

ZnO (11-20) A-plane 5x5x0.5mm, 1sp
ZnO (11-20) A-plane 5x5x0.5mm, 2sp
ZnO (11-20) A-plane 10x10x0.5mm, 1sp
ZnO (11-20) A-plane 10x10x1.0mm, 1sp
ZnO (11-20) A-plane 10x10x1.0mm, 2sp
ZnO (11-20) A-plane 10x10x0.5mm, 2sp

2-3. Undoped ZnO Wafer Substrates — M Plate

ZnO (1-100) M-plane 5x5x0.5mm, 1sp
ZnO (1-100) M-plane 5x5x0.5mm, 2sp”
ZnO (1-100) M-plane 10x10x0.5mm, 1sp
ZnO (1-100) M-plane 10x10x0.5mm, 2sp

2-4. Undoped ZnO Wafer — (10-10)

ZnO (10-10) 10x10x0.5mm, 1sp
ZnO (10-10) 10x10x0.5mm, 2sp

2-5. Ga doped ZnO Wafer

Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished
Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished
Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished
Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished
Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished
Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished
Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished

ZnO (0001), N+ type, Ga doped, 5x5x0.5mm, O-face 1SP
ZnO (0001), N+ type, Ga doped, 10x10x0.5mm, 1sp Zn-Face Polished
ZnO (0001), N+ type, Ga doped, 5x5x0.2mm, 2sp
ZnO (0001) , N+ type, Ga doped,5x5x0.5mm, 1sp Zn face polished
ZnO (0001) N+ type, Ga doped,5x5x0.5mm, 2sp
ZnO (000-1) N+ type, Ga doped,10x10x0.2 mm, 1sp O-face polished
ZnO (000-1) N+ type, Ga doped, 10x10x0.5mm, 1sp O-Face Polished
ZnO (0001) N+ type, Ga doped,10x10x0.5mm, 2sp
ZnO (000-1) N+ type, Ga doped,10x10x1.0 mm, 1sp Oxygen-face polished
ZnO (0001) N+ type, Ga doped,10x10x1.0 mm, 1sp Zn-face polished
ZnO (0001) N+ type, Ga doped,10x10x1.0 mm, 2sp
ZnO (000-1) 20x20x0.2 mm, 1sp O-face polished
ZnO (000-1) N+ type, Ga doped, 20x20x0.5mm, 1sp O-Face Polished
ZnO (0001) N+ type, Ga doped, 20x20x0.5mm, 2sp
ZnO (000-1) N+ type, Ga doped,20x20x1.0 mm, 1sp Oxygen-face polished
ZnO (0001) N+ type, Ga doped,20x20x1.0 mm, 1sp Zn-face polished
ZnO (0001) N+ type, Ga doped,20x20x1.0 mm, 2sp

3. Resistivity of ZnO Wafer:

For high purity undoped ZnO substrate, the resistivity can be 100~500ohm.cm or (0.1~1)ohm.cm. due to different growth process method. For Ga-doped ZnO wafer, the resistivity should be (0.1~1)ohm.cm.

For more information, please send us email at victorchan@powerwaywafer.com

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