ZnO (Undoped,) crystal

PAM XIAMEN offers ZnO (Undoped,) crystal.

PAM XIAMEN’s ZnO crystal is grown by hydrothermal method under high pressure.

ZnO Substrates — C plate

ZnO (0001) 5x5x0.5mm, O-face 1SP – ZOZ050505SO

ZnO (0001) 1/4″x1/4″x0.5mm,1sp

ZnO (0001) 10x10x0.5mm, 1sp Zn-Face Polished

ZnO (0001) 5x5x0.2mm, 2sp

ZnO (0001) 5x5x0.5mm, 1sp Zn face polished

ZnO (0001) 5x5x0.5mm, 2sp

ZnO (0001) 10x10x0.2 mm, 1sp O-face polished

ZnO (0001) 10x10x0.5mm, 1sp O-Face Polished

ZnO (0001) 10x10x0.5mm, 2sp

ZnO (0001) 10x10x1.0 mm, 1sp O-face polished

ZnO (0001) 10x10x1.0 mm, 1sp Zn-face polished

ZnO (0001) 10x10x1.0 mm, 2sp

ZnO (0001) 2″ dia. x0.5mm, double side polished (Zn-face epi polished)

 

ZnO Substrate — A Plate

ZnO (11-20) A-plane 5x5x0.5mm, 1sp

ZnO (11-20) A-plane 5x5x0.5mm, 2sp

ZnO (11-20) A-plane 10x10x0.5mm, 1sp

ZnO (11-20) A-plane 10x10x1.0mm, 1sp

ZnO (11-20) A-plane 10x10x1.0mm, 2sp

ZnO (11-20) A-plane 10x10x0.5mm, 2sp

 

ZnO Substrates — M Plate

ZnO (1-100) M-plane 5x5x0.5mm, 1sp

ZnO (1-100) M-plane 5x5x0.5mm, 2sp”

ZnO (1-100) M-plane 10x10x0.5mm, 1sp

ZnO (1-100) M-plane 10x10x0.5mm, 2sp

 

Ga:ZnO

Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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