ZNO ZINC OXIDE CRYSTAL SUBSTRATES

PAM XIAMEN offers ZnO Zinc Oxide Crystal Substrates.

                                                             Main Parameters
Crystal structure Hexagonal
Lattice parameters a=3.252Å    c=5.313 Å
Density 5.7 g/cm3
Hardness 4(Mohs)
Melting point 1975℃
Thermal expansion coefficient (CTE) 6.5 x 10^-6 /℃ along a axis     3.7 x 10^-6 /℃along c axis
Seebeck coefficient 1200 uV/K @ 300 ℃
Thermal conductivity 0.006 Cal/cm/K
Optical transmission > 50% for 2mm thickness (wavelength 400nm ~ 600nm)
Crystal orientation <0001>, <11-20>, <10-10>±0.5º
Size (mm) 25×25×0.5mm, 10×10×0.5mm, 10×5×0.5mm, 5×5×0.5mm, special sizes and orientations are available upon request
Surface roughness Ra < 5A (AFM surface roughness measurement)
Surface polishing Single side polished (SSP) or double side polished (DSP)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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