PAM XIAMEN offers ZnO Zinc Oxide Crystal Substrates.
|Lattice parameters||a=3.252Å c=5.313 Å|
|Thermal expansion coefficient (CTE)||6.5 x 10^-6 /℃ along a axis 3.7 x 10^-6 /℃along c axis|
|Seebeck coefficient||1200 uV/K @ 300 ℃|
|Thermal conductivity||0.006 Cal/cm/K|
|Optical transmission||> 50% for 2mm thickness (wavelength 400nm ~ 600nm)|
|Crystal orientation||<0001>, <11-20>, <10-10>±0.5º|
|Size (mm)||25×25×0.5mm, 10×10×0.5mm, 10×5×0.5mm, 5×5×0.5mm, special sizes and orientations are available upon request|
|Surface roughness||Ra < 5A (AFM surface roughness measurement)|
|Surface polishing||Single side polished (SSP) or double side polished (DSP)|
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.