Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs
We have investigated the effects of nonradiative recombination centers (NRCs) on the device performance of InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs) inserting low-temperature n-GaN (LT-GaN) underlying [...]
PAM XIAMEN offers 1″&1.5″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
25.4
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
25.4
N
Phos
CZ
-100
225-275
P/P
PRIME
25.4
N
Phos
CZ
-100
225-275
P/P
PRIME
25.4
N
Phos
CZ
-100
250-300
P/E
PRIME
25.4
N
Phos
CZ
-100
250-300
P/E
PRIME
25.4
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
25.4
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
25.4
Intrinsic
Undoped
FZ
-100
> 20000
275-325
P/E
PRIME
25.4
N
Sb
CZ
-100
.5-40
200-250
P/E
PRIME
25.4
N
Sb
CZ
-100
5-40
225-275
P/E
PRIME
25.4
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
25.4
Shipping Cassette
ePak
Holds25Wafers
Clean Room
38.1
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
2019-02-27مؤلف ميتا
PAM-XIAMEN offers (10-11) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(10-11)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20مؤلف ميتا
PAM XIAMEN offers CeO2 Epi-thin film on YSZ Alloy.
CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm
CeO2 Film (40 nm one side) on YSZ <110> 10x10x0.5 mm.
CeO2 Film (40 nm one side) on YSZ, <111>10x10x0.5 mm, 1sp
Due to [...]
2019-04-26مؤلف ميتا
PAM XIAMEN offers 4″CZ Prime Silicon wafer-15
4″ CZ Silicon Wafer
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-12-30مؤلف ميتا
PAM XIAMEN offers 3″ FZ Prime Silicon Wafer.
3″ Si FZ
39-47Ωcm
about 1.5mil is etched from the surfaces in order to remove any surface damage
1.5mil = 1.5*25.4= 38.1μm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and [...]
2019-07-01مؤلف ميتا