PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
4″
1000
P/E
1-10
SEMI Prime
n-type Si:Sb
[111-4°]
4″
450
P/E
0.025-0.045
SEMI Prime
n-type Si:Sb
[111-2.5°]
4″
625
P/E
0.021-0.023
SEMI Prime
n-type Si:Sb
[111]
4″
525
P/E
0.016-0.020
SEMI Prime
n-type Si:Sb
[111-4°]
4″
525
P/E
0.010-0.020
SEMI Prime
n-type Si:Sb
[111-2°]
4″
380
P/E
0.008-0.018
SEMI Prime
n-type Si:Sb
[111-3°]
4″
400
P/E
0.008-0.018
SEMI Prime
n-type Si:Sb
[111-3°]
4″
400
P/E
0.005-0.018
SEMI Prime
n-type Si:As
[111-3°]
4″
400
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-3°]
4″
400
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-4°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-4°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-2.5°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-3°]
4″
525
P/E
0.001-0.005
SEMI Prime
Intrinsic Si:-
[100]
4″
525
P/E
400-1,000
SEMI Prime
For more information, please visit our website: https://www.powerwaywafer.com,
send us [...]
2019-03-06مؤلف ميتا
PAM XIAMEN offers GaAs (110) crystal.
GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2″D x 2.8 mm, as cut
GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp
GaAs, (110) ori. un-doped, 5x6x2.0mm, 2sp
GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp
GaAs, VGF Grown (110) ori. [...]
2019-04-22مؤلف ميتا
PAM-XIAMEN offers 1550nm laser diode wafer, which is an epitaxial wafer of a diode laser structure emitting around 1550 nm (on InP substrate), and the wafer dimension for laser diode 1550nm can be 2” or 3”. You can fabricate a laser for your application such [...]
2019-03-13مؤلف ميتا
Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy
Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, [...]
PAM XIAMEN offers 6″FZ Silicon Wafer-1
Silicon wafers, per SEMI Prime, P/E
6″Ø×675±25µm
FZ p-type Si:B[110]±0.5°
Ro > 1,000 Ohmcm,
One-sidepolished, backside Alkaline etched
2 Flats
Sealed in Empak or equivalent cassette
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-11مؤلف ميتا
PAM XIAMEN offers KCl, Potassium Chloride Crystal Substrates.
Main Parameters
Crystal structure
face centered cubic, M3 a = 6.291 Å
Growth method
crystallization process
Density
1.98(g/cm3)
Melting point
770 °C
Refractive index
1.49025 (at 589 nm)
T
0.91
Nf
0.01114
Surface roughness
<10 nm due to hygroscopic [...]
2019-03-12مؤلف ميتا