4 tommer SiC Epi Wafer
As one of leading SiC epi wafer suppliers, PAM-XIAMEN offers SiC epi wafer, and the SiC epi wafers type includes N type and P type. The SiC epi wafer thickness from 1um to 250um can be produced, and the silicon carbide epi wafer prices are competitive. What is SiC epi wafer? SiC epitaxial wafer is an intermediate link in the core of the SiC industry chain. At present, a whole set of industrial systems from silicon carbide substrates and SiC epi wafers to device preparation have been formed in the world. In the epi wafer market, high-quality SiC epitaxy are the basic materials of SiC power devices. The current development trend of silicon carbide epitaxial materials required by power electronic devices at home and abroad is developing in large diameter, low defects, high uniformity and etc.
1. Specifications of 4-inch SiC Epi Wafer
Item 1:
PAM201221-SIC-EPI
| SiC substrat | |
| Diameter | 100mm |
| Tykkelse | 350um |
| Polytype | 4H-SiC |
| Conductivity | N-type |
| Off-orientation toward | 4-degree off-axis |
| MPD | ≤1/cm2 |
| Resistivitet | 0.015~0.028 ohm-cm |
| Surface finish | Double side polished |
| Epi layer | |
| Buffer: | |
| Tykkelse | 0.5um, n-type |
| Doping level | 1E18cm3 |
| Epi 1: | |
| Tykkelse | 6um+/-5% |
| n-Doping level | 5.2E15/cm3 |
Item 2:
PAM210514-SIC-EPI
| SiC substrat | |
| Diameter | 100mm |
| Tykkelse | 350um |
| Polytype | 4H-SiC |
| Conductivity | N-type |
| Off-orientation toward | 4-degree off-axis |
| MPD | ≤1/cm2 |
| Resistivitet | 0.015~0.028 ohm-cm |
| Surface finish | Double side polished |
| Epi layer: | |
| Buffer: | |
| Tykkelse | 0.5um, n-type |
| Doping level | 1E18cm3 |
| Epi 1: | |
| Tykkelse | 6um+/-5% |
| n-Doping level | <1E15/cm3 |
| Low O, B, P and Al elements: | B<0.06PPM;P<0.05PPM;Al<0.01PPM; without O |
2. SiC Epi in the Fields of Low Voltage, Medium Voltage and High voltage
In terms of application, we generally divide silicon carbide into three areas, namely low voltage, medium voltage and high voltage. In the case of low voltage, it is mainly for some consumer electronics, such as PFC and power supply; medium voltage is mainly for automotive electronics, and medium voltage is also the main application direction for the development of SiC epi wafer in the future. The third is the application end with relatively high voltage levels, such as rail transit and power grid systems above 3300V.
At the same time, we can see that silicon carbide and gallium nitride are still in a competitive relationship in the medium and low-voltage field, but in the high-voltage field, from the perspective of material maturity, silicon carbide has a unique advantage. However, it is a pity that up to now, there has not been a mature product in the high-voltage field. The SiC epi wafer for the high-voltage field is in the stage of research and development all over the world, but in the middle and low voltage silicon carbide epitaxial wafers are already applied in diodes and MOSFET products in the market.
3. 100mm 4H SiC Epitaxial Wafer Norm
This norm applies to 4H silicon carbide (4H-SiC) epitaxial wafers. The SiC wafer production is mainly used to manufacture power semiconductor devices or power electronic devices.
3.1 Requirements of 4H-SiC Epitaxial Growth in 4 Inch
The substrate is a (0001) silicon surface 4H-SiC wafer with an angle of 4° in the <11-20> direction. The ratio of 4H crystal type to the total area of the silicon carbide wafer should not be less than 90%. The surface of the wafer can be polished on one side or on both sides. The silicon surface of the wafer should be chemically mechanically polished with a surface roughness of less than 0.5 nm. The number of cleanable particles on the surface of the wafer (diameter ≥0.5 um) does not exceed 15/piece.
3.2 Epitaxial Quality Requirements for the SiC wafer
Overfladedefekter af SiC-epitaksi bør opfylde kravene i følgende tabel.
| Vare | Maksimal tilladt grænse | |
| Industriel kvalitet | Forskningskvalitet | |
| Gulerødder | ≤80 stk/wafer | ≤100 stk/wafer |
| Kometer | ||
| Trekanter | ||
| Nedtur | ||
| Kantfjernelse | 3 mm | 3 mm |
Overfladeruheden af SiC-wafer i størrelsen 4" bør være mindre end 5,0 nm i hele 4H-SiC-epitaksiale wafer-området.
Tykkelsens ensartethed af det 4-tommers SiC epitaksiale lag skal opfylde: industriel kvalitet ≤5% og forskningskvalitet ≤7%
Dopingkoncentrationens ensartethed for industriel kvalitet bør være ≤30 %, og den for forskningsgrad bør være ≤35 %.
4. FAQ om SiC Epitaxy
Q1:Jeg så på SiC-homoepitaxial-waferne på din virksomheds hjemmeside før, og de har alle bufferlag. Jeg vil gerne spørge, hvad er funktionen af det mellemliggende bufferlag? Hvilken effekt vil det have på det epitaksiale lag, hvis det er direkte epitaksielt uden et bufferlag?
EN:Rollen af det mellemliggende bufferlag i SiC homoepitaxy er at reducere defektdensiteten og give epitaksialt udbytte.
Q2:Er der stor forskel på væksttemperaturen af bufferlaget og det epitaksiale lag af 4H-SiC epitaksial wafer?
EN:Der er lille forskel i væksttemperatur for buffer og epitaksiallag af 4H-SiC epi wafer.
Q3:Jeg er interesseret i din standard Instrinsic SiC på 4H SiC-substrat. Ansøgningen er at producere elektrokemisk suspenderede membraner af ui-doteret SiC fra et n-type substrat, forhåbentlig af tykkelser mellem 500nm-2000nm. Vi forsøger at bestemme ydeevnen af vores elektrokemiske underskæringsproces på Si-face og C-face materiale. Kommer høj waferresistivitet fra høj kompensation ved dybe niveauer eller fra en lav koncentration af urenheder i epi-laget?
EN:Hvis ja, tror jeg, du har brug for 500nm udopet SiC på n-type SiC-substrat. Foreslå at du bruger tykkere tykkelse. Hvis du skal kræve 2um, kan vi også gøre det, bærerkoncentrationen af udopet SiC skal være <1E5, typisk ~1E4.
Q4:Er det muligt at have 4H-SiC epitaksial på 3C-SiC med 20-40 mikron tykkelse?
EN:4H-N SiC på 3C-N SiC er tilbøjelig til faseovergang og er ikke let at kontrollere. Generelt er det under epitaksiale forhold lettere at danne 3C krystalformer, så det er svært at estimere sværhedsgraden af epitaksial 4H på 3C. Men vi kan levere 350um tykt fritstående 3C-SiC substrat, flere specifikationer henvises tilhttps://www.powerwaywafer.com/3c-sic-wafer.html.
For mere information om SiC epi wafer, se venligst:
150 mm 4H n-type SiC EPI wafere
Hvorfor har vi brug for siliciumcarbid epitaksial wafer?
For mere information, kontakt os venligst e-mail på[email protected] og [email protected].