PAM-XIAMEN tilbyder galliumnitrid wafersubstrat for UHB-LED, galliumnitrid wafer, LD og andre halvlederkomponenter.
SiC Wafer
Silicon Carbideï¼SiC) Vafler PAM-XIAMENÂ tilbud Silicon Carbide crytal vafler og epitaksi, som bruges til optisk udstyr, High Power Devices, høj temperatur Enheder, High Frequency Power Devices
GaAs Wafer
PAM-XIAMEN tilbyder Galliumarsenid wafersubstrat og epitaxi til LED, LD og Mikroelektronik applikationer
Germanium Wafer
PWAMÂ tilbud halvledermaterialer, (Ge) Germanium enkelte krystaller og Vafler vokset med VGF / LEC
Silicon Wafer
PAM-XIAMEN, a silicon wafer manufacturing company, offers silicon wafer: FZ Silicon wafer, Test Wafer Monitor Wafer Dummy Wafer, Test Wafer,CZ wafer, epitaxial wafer, polished wafer, etching wafer.
The silicon wafer manufacturing process is crystal pulling, silicon wafer dicing, silicon wafer grinding, chamfering, etching, polishing, cleaning and inspection, among which crystal pulling, silicon wafer polishing and inspection are the core links of silicon wafer manufacturing. As the basic semiconductor substrate, silicon wafers must have high standards of purity, surface flatness, cleanliness, and impurity contamination to maintain the original designed functions of the chip. The high-specification requirements of semiconductor silicon wafers make its manufacturing process complicated. The four core steps include polysilicon purification and polysilicon ingot casting, single crystal silicon wafer growth, and silicon wafer cutting and shaping. As a raw material for wafer fab, the quality of silicon wafers directly determines the stability of the silicon wafer application process. Large-size silicon wafers have become the future development trend of silicon wafers. In order to improve production efficiency and reduce costs, more and more large-size silicon wafers are used.
Wafer FABRIKATIONS
PAM-XIAMEN Tilbud fotoresist plade med fotoresist og fotomaske, og give nanolithography (fotolitografi): Overfladebehandling, Fotoresist gælder, Soft bage, Justering, Eksponering, udvikling, Hård bage, Develop inspicere, Etch, Fotoresist fjernelse (strimmel), Endelig inspektion.
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12 "Prime Grade Silicon Wafer
PAM-XIAMEN offer 300mm bare silicon wafers (12 inch) in prime grade, n type or p type, and the 300mm silicon wafer thickness is 775±15. Compared to other silicon wafer suppliers, Powerway Wafer’s silicon wafer price is more competitive with higher quality. 300mm silicon wafers have a higher yield per wafer than pervious large diameter silicon wafers.
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12 "Silicon Wafers 300mm TOX (Si Thermal Oxidation Wafer)
PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.
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12 "Test Grade Silicon Wafer
PAM-XIAMEN offers 300mm bare silicon wafers (12 inch) dummy, test grade, n type or p type. Compared to other silicon wafer suppliers, Powerway Wafer offers professional service with competitive prices.
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Epi Wafer til Laser Diode
GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).
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Float-Zone Mono-krystallinsk silicium
PAM-XIAMEN kan tilbyde float zone silicium wafer, som er opnået ved Float Zone metoden. Monokrystallinske siliciumstænger føres gennem flydezonevækst, og forarbejde derefter de monokrystallinske siliciumstænger til siliciumwafers, kaldet floatzone siliciumwafers. Da den zonesmeltede siliciumwafer ikke er i kontakt med kvartsdigelen under den flydende zone siliciumproces, er siliciummaterialet i en suspenderet tilstand. Derved bliver det mindre forurenet under processen med flydende zonesmeltning af silicium. Kulstofindholdet og oxygenindholdet er lavere, urenhederne er mindre, og resistiviteten er højere. Den er velegnet til fremstilling af strømenheder og visse elektroniske højspændingsenheder.
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Wafer Foundry Services
PAM-XIAMEN provides wafer foundry services with advanced semiconductor process technology and benefit from our upstream experiences of substrate and wafer expaxy,
PAM-XIAMEN is to be the most advanced wafer technology and foundry services for fabless companies,IDMs and researchers.
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Test Wafer Monitor Wafer Dummy Wafer
Som producent af dummy wafer tilbyder PAM-XIAMEN silikone dummy wafer / test wafer / monitor wafer, som bruges i en produktionsenhed for at forbedre sikkerheden i begyndelsen af produktionsprocessen og bruges til leveringskontrol og evaluering af procesform. Da dummy silicium wafers ofte bruges til eksperimenter og test, er størrelse og tykkelse deraf vigtige faktorer i de fleste tilfælde. 100 mm, 150 mm, 200 mm eller 300 mm dummy wafer er tilgængelig.
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Cz Mono-krystallinsk silicium
PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.
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Epitaksial Silicon Wafer
Silicon Epitaxial Wafer(Epi Wafer) is a layer of epitaxial silicon single crystal deposited onto a single crystal silicon wafer(note: it is available to grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial silicon layer. It also can be used for thin film transistor.
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Poleret Wafer
PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
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ætsning Wafer
The etching silicon wafers offered by PAM-XIAMEN are N type or P type etching wafers, which have low roughness, low reflectivity and high reflectivity. The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, reducing the costs.
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Nanofabrication fotoresist
PAM-XIAMEN Tilbud fotoresist plade med fotoresist
