Produkter

GaN HEMT Epitaksial Wafer

GAN Wafer

PAM-XIAMEN tilbyder galliumnitrid wafersubstrat for UHB-LED, galliumnitrid wafer, LD og andre halvlederkomponenter.

SiC Wafer-underlag (siliciumcarbid)

SiC Wafer

Silicon Carbideï¼SiC) Vafler PAM-XIAMENÂ tilbud Silicon Carbide crytal vafler og epitaksi, som bruges til optisk udstyr, High Power Devices, høj temperatur Enheder, High Frequency Power Devices

GaAs Wafer

GaAs Wafer

PAM-XIAMEN tilbyder Galliumarsenid wafersubstrat og epitaxi til LED, LD og Mikroelektronik applikationer

GASB Wafer

Forbindelse Semiconductor

PAM-Xiamen tilbud Indium Semiconductor Wafer: InSb, InP, InAs, GASB, Gap

Ge (Germanium) enkelte krystaller og Wafers

Germanium Wafer

PWAMÂ tilbud halvledermaterialer, (Ge) Germanium enkelte krystaller og Vafler vokset med VGF / LEC

products

CdZnTe Wafer

Cadmium (CdZnTe eller CZT) er en ny halvleder

wafer product

Silicon Wafer

PAM-XIAMEN, a silicon wafer manufacturing company, offers silicon wafer: FZ Silicon wafer, Test Wafer Monitor Wafer Dummy Wafer, Test Wafer,CZ wafer, epitaxial wafer, polished wafer, etching wafer.

The silicon wafer manufacturing process is crystal pulling, silicon wafer dicing, silicon wafer grinding, chamfering, etching, polishing, cleaning and inspection, among which crystal pulling, silicon wafer polishing and inspection are the core links of silicon wafer manufacturing. As the basic semiconductor substrate, silicon wafers must have high standards of purity, surface flatness, cleanliness, and impurity contamination to maintain the original designed functions of the chip. The high-specification requirements of semiconductor silicon wafers make its manufacturing process complicated. The four core steps include polysilicon purification and polysilicon ingot casting, single crystal silicon wafer growth, and silicon wafer cutting and shaping. As a raw material for wafer fab, the quality of silicon wafers directly determines the stability of the silicon wafer application process. Large-size silicon wafers have become the future development trend of silicon wafers. In order to improve production efficiency and reduce costs, more and more large-size silicon wafers are used.

wafer product

Wafer FABRIKATIONS

PAM-XIAMEN Tilbud fotoresist plade med fotoresist og fotomaske, og give nanolithography (fotolitografi): Overfladebehandling, Fotoresist gælder, Soft bage, Justering, Eksponering, udvikling, Hård bage, Develop inspicere, Etch, Fotoresist fjernelse (strimmel), Endelig inspektion.

  • 12 "Prime Grade Silicon Wafer

    PAM-XIAMEN offer 300mm bare silicon wafers (12 inch) in prime grade, n type or p type, and the 300mm silicon wafer thickness is 775±15. Compared to other silicon wafer suppliers, Powerway Wafer’s silicon wafer price is more competitive with higher quality. 300mm silicon wafers have a higher yield per wafer than pervious large diameter silicon wafers.

  • 12 "Silicon Wafers 300mm TOX (Si Thermal Oxidation Wafer)

    PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.

  • 12 "Test Grade Silicon Wafer

    PAM-XIAMEN offers 300mm bare silicon wafers (12 inch) dummy, test grade, n type or p type. Compared to other silicon wafer suppliers, Powerway Wafer offers professional service with competitive prices.

  • Epi Wafer til Laser Diode

    GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

  • Float-Zone Mono-krystallinsk silicium

    PAM-XIAMEN kan tilbyde float zone silicium wafer, som opnås ved Float Zone-metoden. Monokrystallinske siliciumstænger kommer gennem svømmerzones vækst og behandler derefter de monokrystallinske siliciumstænger til siliciumskiver, kaldet floatzone-siliciumskiver. Da den zone-smeltede siliciumskive ikke er i kontakt med kvartsdiglen under siliciumprocessen med flydende zone, er siliciummaterialet i en suspenderet tilstand. Dermed er det mindre forurenet under processen med flydende zone smeltning af silicium. Kulstofindholdet og iltindholdet er lavere, urenhederne er mindre, og resistiviteten er højere. Den er velegnet til fremstilling af strømforsyninger og visse højspændingselektroniske enheder.

  • Wafer Foundry Services

    PAM-XIAMEN provides wafer foundry services with advanced semiconductor process technology and benefit from our upstream experiences of substrate and wafer expaxy, 

    PAM-XIAMEN is to be the most advanced wafer technology and foundry services for fabless companies,IDMs and researchers.

     

  • Test Wafer Monitor Wafer Dummy Wafer

    Som producent af dummy wafer tilbyder PAM-XIAMEN silicone dummy wafer / test wafer / monitor wafer, som bruges i en produktionsenhed til at forbedre sikkerheden i begyndelsen af ​​produktionsprocessen og bruges til leveringskontrol og evaluering af procesform. Da dummy-siliciumskiver ofte bruges til eksperimenter og test, er størrelse og tykkelse deraf vigtige faktorer i de fleste tilfælde. 100mm, 150mm, 200mm eller 300mm dummy wafer er tilgængelig.

  • Cz Mono-krystallinsk silicium

    PAM-XIAMEN, en monokrystallinsk bulk siliciumproducent, kan tilbyde <100>, <110> og <111> monokrystallinske siliciumplader med N&P dopant i 76,2 ~ 200 mm, der dyrkes ved CZ-metode. Czochralski -metoden er en krystalvækstmetode, kaldet CZ -metoden. Det er integreret i et varmeledningssystem med lige rør, opvarmet af grafitmodstand, smelter polysilicium indeholdt i en quartzdigel med høj renhed og indsætter derefter frøkrystallet i overfladen af ​​smelten til svejsning. Derefter sænkes og smeltes den roterende frøkrystal. Kroppen er infiltreret og rørt, gradvist hævet og færdig eller trukket gennem trinene nakke, nakke, skulder, kontrol med samme diameter og efterbehandling.

  • Epitaksial Silicon Wafer

    Silicon Epitaxial Wafer(Epi Wafer) is a layer of epitaxial silicon single crystal deposited onto a single crystal silicon wafer(note: it is available to grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial silicon layer. It also can be used for thin film transistor.

  • Poleret Wafer

    PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

  • ætsning Wafer

    The etching silicon wafers offered by PAM-XIAMEN are N type or P type etching wafers, which have low roughness, low reflectivity and high reflectivity. The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, reducing the costs.

  • Nanofabrication fotoresist

    PAM-XIAMEN Tilbud fotoresist plade med fotoresist