4 Inch SiC Epi Wafer

4 Inch SiC Epi Wafer

As one of leading SiC epi wafer suppliers, PAM-XIAMEN offers SiC epi wafer, and the SiC epi wafers type includes N type and P type. The SiC epi wafer thickness from 1um to 250um can be produced, and the silicon carbide epi wafer prices are competitive. What is SiC epi wafer? SiC epitaxial wafer is an intermediate link in the core of the SiC industry chain. At present, a whole set of industrial systems from silicon carbide substrates and SiC epi wafers to device preparation have been formed in the world. In the epi wafer market, high-quality SiC epitaxy are the basic materials of SiC power devices. The current development trend of silicon carbide epitaxial materials required by power electronic devices at home and abroad is developing in large diameter, low defects, high uniformity and etc.

SiC Epi Wafer

 

1. Specifications of 4-inch SiC Epi Wafer

Item 1:
PAM201221-SIC-EPI

SiC Substrate
Diameter 100mm
Thickness 350um
Polytype 4H-SiC
Conductivity N-type
Off-orientation toward 4-degree off-axis
MPD ≤1/cm2
Resistivity 0.015~0.028 ohm-cm
Surface finish Double side polished
Epi layer
Buffer:
Thickness 0.5um, n-type
Doping level 1E18cm3
Epi 1:
Thickness 6um+/-5%
n-Doping level 5.2E15/cm3

 

Item 2:
PAM210514-SIC-EPI

SiC Substrate
Diameter 100mm
Thickness 350um
Polytype 4H-SiC
Conductivity N-type
Off-orientation toward 4-degree off-axis
MPD ≤1/cm2
Resistivity 0.015~0.028 ohm-cm
Surface finish Double side polished
Epi layer:
Buffer:
Thickness 0.5um, n-type
Doping level 1E18cm3
Epi 1:
Thickness 6um+/-5%
n-Doping level <1E15/cm3
Low O, B, P and Al elements: B<0.06PPM;P<0.05PPM;Al<0.01PPM; without O

 

2. SiC Epi in the Fields of Low Voltage, Medium Voltage and High voltage

In terms of application, we generally divide silicon carbide into three areas, namely low voltage, medium voltage and high voltage. In the case of low voltage, it is mainly for some consumer electronics, such as PFC and power supply; medium voltage is mainly for automotive electronics, and medium voltage is also the main application direction for the development of SiC epi wafer in the future. The third is the application end with relatively high voltage levels, such as rail transit and power grid systems above 3300V.

At the same time, we can see that silicon carbide and gallium nitride are still in a competitive relationship in the medium and low-voltage field, but in the high-voltage field, from the perspective of material maturity, silicon carbide has a unique advantage. However, it is a pity that up to now, there has not been a mature product in the high-voltage field. The SiC epi wafer for the high-voltage field is in the stage of research and development all over the world, but in the middle and low voltage silicon carbide epitaxial wafers are already applied in diodes and MOSFET products in the market.

3. 100mm 4H SiC Epitaxial Wafer Norm

This norm applies to 4H silicon carbide (4H-SiC) epitaxial wafers. The SiC wafer production is mainly used to manufacture power semiconductor devices or power electronic devices.

3.1 Requirements of 4H-SiC Epitaxial Growth in 4 Inch

The substrate is a (0001) silicon surface 4H-SiC wafer with an angle of 4° in the <11-20> direction. The ratio of 4H crystal type to the total area of the silicon carbide wafer should not be less than 90%. The surface of the wafer can be polished on one side or on both sides. The silicon surface of the wafer should be chemically mechanically polished with a surface roughness of less than 0.5 nm. The number of cleanable particles on the surface of the wafer (diameter ≥0.5 um) does not exceed 15/piece.

3.2 Epitaxial Quality Requirements for the SiC wafer

Surface defects of SiC epitaxy should meet the requirements of the following table.

Item Maximum Allowable Limit
Industrial Grade Research Grade
Carrots ≤80pcs/wafer ≤100pcs/wafer
Comets
Triangles
Downfalls
Edge Removal 3 mm 3 mm

 

The surface roughness of SiC wafer in size of 4” should be less than 5.0 nm in the entire 4H-SiC epitaxial wafer range.

The thickness uniformity of the 4-inch SiC epitaxial layer should meet: industrial grade ≤5% and research grade ≤7%

Doping concentration uniformity for industrial grade should be ≤30%, and that for research grade should be ≤35%.

 

For more information about SiC epi wafer, please refer to:

150mm 4H n-type SiC EPI wafers

4H SiC Epitaxial Wafers

Why do We Need Silicon Carbide Epitaxial Wafer?

For more information, please contact us email at [email protected] and [email protected].

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