Semiconductor silicon carbide (4H SiC) has excellent properties such as wide bandgap, high breakdown field strength, high electron mobility, high thermal conductivity, and good chemical stability. It has demonstrated important application potential in fields such as power electronics, radio frequency microwave, and quantum information. [...]
2024-04-09meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-12
4″ CZ wafer, N type
Orientation: (100)±0.5
Type/Dopant: n/phosphorus
Resistivity: 1-5 Ω-cm
Diameter: 100 mm
Thickness: 525 ± 25 μm
Surface: P/E
Source: Prolog
SEMI Prime, 1Flat, hard cst
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-23meta-author
Photolithography chrome masks are for sale. According to the different substrate materials, it can be divided into quartz mask, soda mask and others (including relief plate, film), etc. Among them, the photomask on quartz substrate and soda lime are commonly used lithography masks in [...]
2021-11-09meta-author
Quaternary direct bandgap compound materials, such as InGaAsP and AlGaInAs, can be grown on InP substrate, which are lattice match with InP. At present, in various fields, researchers have designed semiconductor lasers, optical amplifiers, detectors, etc., using these two types of materials grow on InP substrate. For optical [...]
2023-07-21meta-author
PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(20-21)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
The researchers have taken the first step towards transferring spin-oriented electrons between a topological insulator (orange layer) and a conventional semiconductor (blue layer). Credit: Linköping Universitet
A discovery of how to control and transfer spinning electrons paves the way for novel hybrid devices that could [...]
2017-06-26meta-author