Ge (Germanium) enkelte krystaller og Wafers

Ge (germanium) enkelte krystaller og Wafers

PAM-XIAMEN tilbyder 2”, 3”, 4” og 6” germanium wafer, som er en forkortelse for Ge wafer dyrket af VGF / LEC. Let dopet Germanium wafer af P og N type kan også bruges til Hall effekt eksperiment. Ved stuetemperatur er krystallinsk germanium skørt og har ringe plasticitet. Germanium har halvlederegenskaber. Germanium med høj renhed er dopet med trivalente grundstoffer (såsom indium, gallium, bor) for at opnå P-type germanium-halvledere; og pentavalente grundstoffer (såsom antimon, arsen og phosphor) er dopet for at opnå N-type germanium-halvledere. Germanium har gode halvlederegenskaber, såsom høj elektronmobilitet og høj hulmobilitet.
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Single Crystal Germanium Wafer

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped N and P type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

1. Properties of Germanium Wafer

1.1 General Properties of Germanium Wafer

Generelt Egenskaber Struktur Cubic, a = 5.6754 Å
Massefylde: 5,765 g / cm3
Melting   Point: 937.4 oC
Varmeledningsevne: 640
Crystal Growth Teknologi Czochralski
doping tilgængelig / Sb Doping Doping I eller Ga
Ledende type N N P
Specifik modstand, ohm.cm >35 <0,05 0,05-0,1
EPD < 5×103/cm2 < 5×103/cm2 < 5×103/cm2
< 5×102/cm2 < 5×102/cm2 < 5×102/cm2

 

1.2 Grades and Application of Germanium wafer

Elektronisk Grade Bruges til dioder og transistorer,
Infrarød eller opitical Grade Bruges til IR optisk vindue eller diske, opitical komponenter
Cell Grade Used for substrates of solar cell

 

1.3 Standard Specs of Germanium Crystal and wafer

Crystal Orientering <111>,<100> and <110> ± 0.5o or custom orientation
Crystal boule som voksen 1 "~ 6" diameter x 200 mm Længde
Standardblank som cut 1 "x 0,5 mm 2 "x0.6mm 4 "x0.7mm 5 "& 6" x0.8mm
Standard poleret wafer (en / to sider poleret) 1 "x 0,30 mm 2 "x0.5mm 4 "x0.5mm  5″&6″x0.6mm
  • Special size and orientation are available upon requested Wafers

2. Specification of Germanium Wafer

2.1 Specification of Germanium Wafer of 2”,3”,4”and 6”size

Vare Specifikationer Bemærkninger
vækst Metode VGF
varmeledning type n-type, p type  
dopingmiddel Gallium eller antimon
wafer i diameter 2, 3,4 & 6 inch
Crystal Orientering (100), (111), (110)
Tykkelse 200 ~ 550 um
AF EJ eller USA
Carrier Koncentration anmodning ved kunderne  
Resistivity ved RT (0,001 ~ 80) Ohm.cm
Etch Pit Density <5000 / cm2
Laser Mærkning efter anmodning
Surface Finish P / E eller P / P
Epi klar Ja
Pakke Enkelt wafer beholder eller kassette

 

2.2 Germanium Wafer for Solar Cell

4 tommer Ge wafer Specification for solceller  —
Doping P  —
dopingmidler Ge-Ga  —
Diameter 100 ± 0,25 mm  —
Orientering (100) 9 ° off mod <111> +/- 0,5
Off-orientering hældningsvinkel N / A  —
Primær Flad Orientering N / A  —
Primær Flad Længde 32 ± 1 mm
Sekundær Flad Orientering N / A  —
Sekundær Flad Længde N / A mm
cc (0,26-2,24) E18 / cc
Resistivity (0,74-2,81) E-2 ohm.cm
Electron Mobility 382-865 cm2 / vs
EPD <300 / cm2
Laser Mark N / A  —
Tykkelse 175 ± 10 um
TTV <15 um
TIR N / A um
SLØJFE <10 um
Warp <10 um
Front ansigt Poleret  —
Tilbage ansigt Jord  —

 

2.3 Ge Wafer (as an optical filter substrate for a longpass SWIR filter)

PAM180212-GE

Vare DSP Ge Wafer
Dia 4”
Tykkelse 1.50mm +/- 0.10mm
Orientering N / A
Conductivity N / A
Resistivity N / A
Surface Process Double-side polished; minimum 90mm dia. central clear aperture
Other Parameters 60-40 scratch-dig or better
Less than 2 arc minutes parallelism
Surfaces optically flat to within 1 fringe irregular per any 25mm dia. in the clear aperture

 

2.4 Germanium Used as Thin FIR Window (PAM211121-GE)

4″ Germanium wafer with low plasma frequency, 175µm+/-25um. (100), single side polished.

3. Germanium Wafer Process

With the advancement of science and technology, the processing technique of germanium wafer manufacturers is more and more mature. In the production of germanium wafers, germanium dioxide from the residue processing is further purified in chlorination and hydrolysis steps.
1) høj renhed germanium opnås under zone raffinering.
2) En germanium krystal er produceret via Czochralski-processen.
3) germanium wafer fremstilles via adskillige skæring, slibning, og ætsning trin.
4) Waferne rengøres og inspektion. I løbet af denne proces, de vafler er enkelt side poleret eller dobbelt side poleret efter sædvane krav, epi-klar wafer kommer.
5)The thin germanium wafers are packed in single wafer containers, under a nitrogen atmosphere.

4. Application of Germanium:

Germanium blank eller vindue anvendes i nattesyn og termografiske imaging-løsninger til kommerciel sikkerhed, brandslukning og industrielt udstyr overvågning. Også, at de anvendes som filtre til analytisk og måleudstyr, vinduer til måling remote temperatur samt spejle til lasere.

Thin Germanium substrates are used in III-V triple-junction solar cells and for power Concentrated PV (CPV) systems and as an optical filter substrate for a longpass SWIR filter application.

5. Test of Germanium Wafer:

The resistivity of the crystal germanium wafer was measured by Four Probe Resistance Tester, and the surface roughness of Germanium was measured by profilometer.

 

Remark:
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips on July 3, 2023. Exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!

 

 

 

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.

 

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