Ge (germanium) enkelte krystaller og Wafers
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Single Crystal Germanium Wafer
PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped N and P type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.
1. Properties of Germanium Wafer
1.1 General Properties of Germanium Wafer
Generelt Egenskaber Struktur | Cubic, a = 5.6754 Å | ||
Massefylde: 5,765 g / cm3 | |||
Melting Point: 937.4 oC | |||
Varmeledningsevne: 640 | |||
Crystal Growth Teknologi | Czochralski | ||
doping tilgængelig | / | Sb Doping | Doping I eller Ga |
Ledende type | N | N | P |
Specifik modstand, ohm.cm | >35 | <0,05 | 0,05-0,1 |
EPD | < 5×103/cm2 | < 5×103/cm2 | < 5×103/cm2 |
< 5×102/cm2 | < 5×102/cm2 | < 5×102/cm2 |
1.2 Grades and Application of Germanium wafer
Elektronisk Grade | Bruges til dioder og transistorer, |
Infrarød eller opitical Grade | Bruges til IR optisk vindue eller diske, opitical komponenter |
Cell Grade | Used for substrates of solar cell |
1.3 Standard Specs of Germanium Crystal and wafer
Crystal Orientering | <111>,<100> and <110> ± 0.5o or custom orientation | |||
Crystal boule som voksen | 1 "~ 6" diameter x 200 mm Længde | |||
Standardblank som cut | 1 "x 0,5 mm | 2 "x0.6mm | 4 "x0.7mm | 5 "& 6" x0.8mm |
Standard poleret wafer (en / to sider poleret) | 1 "x 0,30 mm | 2 "x0.5mm | 4 "x0.5mm | 5″&6″x0.6mm |
- Special size and orientation are available upon requested Wafers
2. Specification of Germanium Wafer
2.1 Specification of Germanium Wafer of 2”,3”,4”and 6”size
Vare | Specifikationer | Bemærkninger |
vækst Metode | VGF | — |
varmeledning type | n-type, p type | |
dopingmiddel | Gallium eller antimon | — |
wafer i diameter | 2, 3,4 & 6 | inch |
Crystal Orientering | (100), (111), (110) | — |
Tykkelse | 200 ~ 550 | um |
AF | EJ eller USA | — |
Carrier Koncentration | anmodning ved kunderne | |
Resistivity ved RT | (0,001 ~ 80) | Ohm.cm |
Etch Pit Density | <5000 | / cm2 |
Laser Mærkning | efter anmodning | — |
Surface Finish | P / E eller P / P | — |
Epi klar | Ja | — |
Pakke | Enkelt wafer beholder eller kassette | — |
2.2 Germanium Wafer for Solar Cell
4 tommer Ge wafer Specification | for solceller | — |
Doping | P | — |
dopingmidler | Ge-Ga | — |
Diameter | 100 ± 0,25 mm | — |
Orientering | (100) 9 ° off mod <111> +/- 0,5 | |
Off-orientering hældningsvinkel | N / A | — |
Primær Flad Orientering | N / A | — |
Primær Flad Længde | 32 ± 1 | mm |
Sekundær Flad Orientering | N / A | — |
Sekundær Flad Længde | N / A | mm |
cc | (0,26-2,24) E18 | / cc |
Resistivity | (0,74-2,81) E-2 | ohm.cm |
Electron Mobility | 382-865 | cm2 / vs |
EPD | <300 | / cm2 |
Laser Mark | N / A | — |
Tykkelse | 175 ± 10 | um |
TTV | <15 | um |
TIR | N / A | um |
SLØJFE | <10 | um |
Warp | <10 | um |
Front ansigt | Poleret | — |
Tilbage ansigt | Jord | — |
2.3 Ge Wafer (as an optical filter substrate for a longpass SWIR filter)
PAM180212-GE
Vare | DSP Ge Wafer |
Dia | 4” |
Tykkelse | 1.50mm +/- 0.10mm |
Orientering | N / A |
Conductivity | N / A |
Resistivity | N / A |
Surface Process | Double-side polished; minimum 90mm dia. central clear aperture |
Other Parameters | 60-40 scratch-dig or better |
Less than 2 arc minutes parallelism | |
Surfaces optically flat to within 1 fringe irregular per any 25mm dia. in the clear aperture |
2.4 Germanium Used as Thin FIR Window (PAM211121-GE)
4″ Germanium wafer with low plasma frequency, 175µm+/-25um. (100), single side polished.
3. Germanium Wafer Process
With the advancement of science and technology, the processing technique of germanium wafer manufacturers is more and more mature. In the production of germanium wafers, germanium dioxide from the residue processing is further purified in chlorination and hydrolysis steps.
1) høj renhed germanium opnås under zone raffinering.
2) En germanium krystal er produceret via Czochralski-processen.
3) germanium wafer fremstilles via adskillige skæring, slibning, og ætsning trin.
4) Waferne rengøres og inspektion. I løbet af denne proces, de vafler er enkelt side poleret eller dobbelt side poleret efter sædvane krav, epi-klar wafer kommer.
5)The thin germanium wafers are packed in single wafer containers, under a nitrogen atmosphere.
4. Application of Germanium:
Germanium blank eller vindue anvendes i nattesyn og termografiske imaging-løsninger til kommerciel sikkerhed, brandslukning og industrielt udstyr overvågning. Også, at de anvendes som filtre til analytisk og måleudstyr, vinduer til måling remote temperatur samt spejle til lasere.
Thin Germanium substrates are used in III-V triple-junction solar cells and for power Concentrated PV (CPV) systems and as an optical filter substrate for a longpass SWIR filter application.
5. Test of Germanium Wafer:
The resistivity of the crystal germanium wafer was measured by Four Probe Resistance Tester, and the surface roughness of Germanium was measured by profilometer.
Remark:
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips on July 3, 2023. Exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.
P Type Thin Germanium Wafer | Solar Cell
Germanium Substrate for Optics and Epi-growth
Doped or Undoped Germanium (Ge) Crystal | Ge Single Crystal Growth
Single Crystal Germanium Wafer with Orientation (110) toward<111>
Test Method for Dislocation Density of Monocrystal Germanium