Produkte

GaN-HEMT-Epitaxie-Wafer

GaN-Wafer

PAM-XIAMEN bietet Galliumnitrid-Wafersubstrat für UHB-LED, Galliumnitrid-Wafer, LD und andere Halbleiterbauelemente an.

SiC Wafer Substrate (Silicon Carbide)

SiC-Wafer

Siliziumkarbid-SiC-Wafer PAM-XIAMEN bietet krytale Siliziumkarbid-Wafer und Epitaxie an, die für optoelektronische Bauelemente, Hochleistungsgeräte, Hochtemperaturgeräte und Hochfrequenz-Leistungsgeräte verwendet werden

GaAs-Wafer

GaAs-Wafer

PAM-XIAMEN bietet Galliumarsenid-Wafersubstrat und Epitaxie für LED-, LD- und Mikroelektronikanwendungen

GaSb Wafer

Compound Semiconductor

PAM-XIAMEN bietet Indium Semiconductor Wafer an: InSb, InP, InAs, GaSb, GaP

Ge (Germanium) Einkristallen und Oblaten

Germanium-Wafer

PWAM bietet Halbleitermaterialien, (Ge) Germanium-Einkristalle und Wafer von VGF / LEC an

products

CdZnTe Wafer

Cadmiumzink-Tellurid (CdZnTe oder CZT) ist ein neuer Halbleiter

wafer product

Wafer

PAM-XIAMEN, a silicon wafer manufacturing company, offers silicon wafer: FZ Silicon wafer, Test Wafer Monitor Wafer Dummy Wafer, Test Wafer,CZ wafer, epitaxial wafer, polished wafer, etching wafer.

The silicon wafer manufacturing process is crystal pulling, silicon wafer dicing, silicon wafer grinding, chamfering, etching, polishing, cleaning and inspection, among which crystal pulling, silicon wafer polishing and inspection are the core links of silicon wafer manufacturing. As the basic semiconductor substrate, silicon wafers must have high standards of purity, surface flatness, cleanliness, and impurity contamination to maintain the original designed functions of the chip. The high-specification requirements of semiconductor silicon wafers make its manufacturing process complicated. The four core steps include polysilicon purification and polysilicon ingot casting, single crystal silicon wafer growth, and silicon wafer cutting and shaping. As a raw material for wafer fab, the quality of silicon wafers directly determines the stability of the silicon wafer application process. Large-size silicon wafers have become the future development trend of silicon wafers. In order to improve production efficiency and reduce costs, more and more large-size silicon wafers are used.

wafer product

WAFERFERTIGUNG

PAM-XIAMEN Bietet Fotolackplatte mit Fotolack und Fotomaske und bietet Nanolithographie (Fotolithographie): Oberflächenvorbereitung, Auftragen von Fotolack, Weichbacken, Ausrichten, Belichten, Entwickeln, Hartbacken, Entwickeln prüfen, Ätzen, Entfernen von Fotolack (Streifen), Endkontrolle.

  • 12 "Prime Grade Silicon Wafer

    PAM-XIAMEN offer 300mm bare silicon wafers (12 inch) in prime grade, n type or p type, and the 300mm silicon wafer thickness is 775±15. Compared to other silicon wafer suppliers, Powerway Wafer’s silicon wafer price is more competitive with higher quality. 300mm silicon wafers have a higher yield per wafer than pervious large diameter silicon wafers.

  • 12 "Silicon Wafer 300mm TOX (Si Thermische Oxidation Wafer)

    PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.

  • 12 "Test Grade Silicon Wafer

    PAM-XIAMEN offers 300mm bare silicon wafers (12 inch) dummy, test grade, n type or p type. Compared to other silicon wafer suppliers, Powerway Wafer offers professional service with competitive prices.

  • Epi-Wafer für Laserdiode

    GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

  • Float-Zone monokristallinem Silizium

    PAM-XIAMEN kann Float-Zone-Siliziumwafer anbieten, die durch das Float-Zone-Verfahren gewonnen werden. Monokristalline Siliziumstäbe werden durch Float-Zone-Wachstum gewonnen und dann die monokristallinen Siliziumstäbe zu Siliziumwafern verarbeitet, die als Float-Zone-Siliziumwafer bezeichnet werden. Da der zonengeschmolzene Siliziumwafer den Quarztiegel während des Schwebezonen-Siliziumprozesses nicht berührt, befindet sich das Siliziummaterial in einem suspendierten Zustand. Dadurch wird es während des Schwebezonenschmelzens von Silizium weniger verschmutzt. Der Kohlenstoffgehalt und der Sauerstoffgehalt sind niedriger, die Verunreinigungen sind geringer und der spezifische Widerstand ist höher. Es eignet sich für die Herstellung von Leistungsgeräten und bestimmten elektronischen Hochspannungsgeräten.

  • Wafer Foundry Services

    PAM-XIAMEN provides wafer foundry services with advanced semiconductor process technology and benefit from our upstream experiences of substrate and wafer expaxy, 

    PAM-XIAMEN is to be the most advanced wafer technology and foundry services for fabless companies,IDMs and researchers.

     

  • Test-Wafer-Monitor Wafer Dummy-Wafer

    Als Dummy-Wafer-Hersteller bietet PAM-XIAMEN Silikon-Dummy-Wafer / Test-Wafer / Monitor-Wafer an, die in einem Produktionsgerät zur Erhöhung der Sicherheit zu Beginn des Produktionsprozesses eingesetzt werden und zur Lieferkontrolle und Bewertung der Prozessform dienen. Da für Experimente und Tests häufig Dummy-Siliziumwafer verwendet werden, sind deren Größe und Dicke in den meisten Fällen wichtige Faktoren. 100-mm-, 150-mm-, 200-mm- oder 300-mm-Dummy-Wafer sind verfügbar.

  • Cz monokristallinem Silizium

    PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.

  • Siliziumepitaxialwafers

    Silicon Epitaxial Wafer(Epi Wafer) is a layer of epitaxial silicon single crystal deposited onto a single crystal silicon wafer(note: it is available to grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial silicon layer. It also can be used for thin film transistor.

  • polierte Wafer

    PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

  • Ätzen Wafer

    The etching silicon wafers offered by PAM-XIAMEN are N type or P type etching wafers, which have low roughness, low reflectivity and high reflectivity. The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, reducing the costs.

  • Nanofabrikations-Photoresist

    PAM-XIAMEN Angebote Photoresist Platte mit Photoresist