Highlights
•MOCVD growth of a p-GaN/i-InGaN/n-GaN (PIN) solar cell on ZnO/Sapphire templates.
•In-depth structural characterizations showing no back-etching of ZnO.
•Chemical lift-off and wafer-bonding of the structure on float glass.
•Structural characterizations of the device on glass.
Abstract
p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal [...]
PAM XIAMEN offers Tempered Gorilla Glass.
The glass is great for strong and inexpensive screen displays.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
2019-02-27meta-autor
PAM XIAMEN offers EU DOPED CALCIUM FLUORIDE EU: CAF2 CRYSTAL.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Eu doped calcium fluoride, Eu: CaF2, is an excellent scintillation crystal. It has been widely used in low energy nuclear physics [...]
2019-03-11meta-autor
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[100-4.0°] ±0.5°
2″
400
P/E
FZ >20,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
2″
400
P/E
FZ >20,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
2″
200
P/P
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
350
P/P
FZ >10,000
SEMI Test, Wafers with edge chips
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
300
P/E
FZ 5,000-10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
300
P/E
FZ 5,000-10,000
SEMI Prime, in hard cassettes of 2 & 5 wafers
Intrinsic Si:-
[111] ±0.5°
2″
330
P/P
FZ >20,000
SEMI
Intrinsic Si:-
[111] ±0.5°
2″
330
P/P
FZ >20,000
SEMI
Intrinsic Si:-
[111] [...]
2019-03-07meta-autor
Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate
In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, [...]
PAM XIAMEN offers TiO2(Anatase) substrate.
TiO2 Anatase (001) 5x5x0.5mm, 1 SP”
TiO2 Anatase (100) 5x5x0.5mm, 1 SP
TiO2 Anatase (101) 5x5x0.5mm, 1 SP
TiO2 Anatase (103) 5x5x0.5mm, 1 SP
TiO2 Anatase (110) 5x5x0.5mm, 1 SP
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-05-20meta-autor