Wafer de semi-conducteur composé comprenant la plaquette de Gaas, la plaquette de germanium, la plaquette d'InP, la plaquette d'InSb

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Wafer de semi-conducteur composé comprenant la plaquette de Gaas, la plaquette de germanium, la plaquette d'InP, la plaquette d'InSb

Wafer de semi-conducteur composé comprenant la plaquette de Gaas, la plaquette de germanium, la plaquette d'InP, la plaquette d'InSb

En stock, mais pas limité à ce qui suit.

Wafer No. Taille de la plaquette Brillant Type Epaisseur wafer Quantité, pcs) Densité de Dislocation Résistivité (ohm.cm)
PAM-XIAMEN-WAFER- # III-V1 1 " SSP N100 450 ± 25 9 EPD <700 0.00204-0.00427
PAM-XIAMEN-WAFER- # III-V2 10 * 11 cellules rendement moyen 32,72% — — 56 — —
PAM-XIAMEN-WAFER- # III-V3 2 " SSP Semi-isolante 350um 10 EPD <700 —
PAM-XIAMEN-WAFER- # III-V4 2 " DSP Semi-isolante 350 ± 20 2 EPD <900 —
PAM-XIAMEN-WAFER- # III-V5 2 " DSP Semi-isolante 350 ± 20 2 EPD <600 —
PAM-XIAMEN-WAFER- # III-V6 2 " SSP Type N 15 ° 350um 1 EPD <5000 —
PAM-XIAMEN-WAFER- # III-V7 2 " SSP Type N 15 ° 350um 35 EPD500-1000 —
PAM-XIAMEN-WAFER- # III-V8 2 " DSP Type N 2 ° 350um 5 <50 —
PAM-XIAMEN-WAFER- # III-V9 2 " SSP Type N 2 ° 350um 2 EPD1735-2198 —
PAM-XIAMEN-WAFER- # III-V10 2 " SSP Type N 2 ° 350um 25 EPD1569-2061 —
PAM-XIAMEN-WAFER- # III-V11 2 " SSP Type N 2 ° 450um 3 —
PAM-XIAMEN-WAFER- # III-V12 2 " DSP Type N 400 ± 15 14 EPD <50 —
PAM-XIAMEN-WAFER- # III-V13 2 " DSP Type N 625 ± 15 4 epd1300-1400 —
PAM-XIAMEN-WAFER- # III-V14 2 " DSP Type N 625 ± 15 34 EPD50-100 —
PAM-XIAMEN-WAFER- # III-V15 2 " DSP N type 100 110um 15 JGS2001002, G202001X —
PAM-XIAMEN-WAFER- # III-V16 2 " SSP Plaquette Epi PNP / N — 4 — —
PAM-XIAMEN-WAFER- # III-V17 2 "GaP SSP — 250 ± 20 1 — —
PAM-XIAMEN-WAFER- # III-V18 3 " SSP Semi-isolante 600um / 625um 1 — —
PAM-XIAMEN-WAFER- # III-V19 3 " DSP Semi-isolante 586um 1 — —
PAM-XIAMEN-WAFER- # III-V20 3 " DSP Semi-isolante 600um / 501um 1 — —
PAM-XIAMEN-WAFER- # III-V21 3 " SSP / DSP Semi-isolante 625um 25 — —
PAM-XIAMEN-WAFER- # III-V22 3 " DSP 625 ± 20 20 — —
PAM-XIAMEN-WAFER- # III-V23 3 " DSP Semi-isolante 3500 ± 20 2 — —
PAM-XIAMEN-WAFER- # III-V24 3 " DSP Semi-isolante 625um 35 — —
PAM-XIAMEN-WAFER- # III-V25 3 " SSP / DSP Type N 2 ° 350um 11 — —
PAM-XIAMEN-WAFER- # III-V26 3 " SSP Type N 400 ± 20 14 EPD （50-300） 1.6E-3-4.2E-3
PAM-XIAMEN-WAFER- # III-V27 3 " SSP Type N 400um 5 EPD （600-800） —
PAM-XIAMEN-WAFER- # III-V28 3 " SSP Type N 300um 3 — —
PAM-XIAMEN-WAFER- # III-V29 4 " DSP Semi-isolante 600 ± 25 15 — —
PAM-XIAMEN-WAFER- # III-V30 4 " DSP Semi-isolante 575um 1 — —
PAM-XIAMEN-WAFER- # III-V31 4 " DSP Semi-isolant 2 ° 625 ± 25 25 — —
PAM-XIAMEN-WAFER- # III-V32 4 " non poli — 1.6mm 1 — —
PAM-XIAMEN-WAFER- # III-V33 4 " SSP Type N 15 ° 350um 3 — —
PAM-XIAMEN-WAFER- # III-V34 4 " non poli Semi-isolante 1880um 8 — —
PAM-XIAMEN-WAFER- # III-V35 2 ″ Ge SSP Semi-isolant 111 400 ± 15 1 — > 40Ω.cm
PAM-XIAMEN-WAFER- # III-V36 2 ″ Ge non dopé DSP N type 100 400 ± 25 31 — 0,3-1Ω.cm
PAM-XIAMEN-WAFER- # III-V37 6 ″ Ge SSP N type 100 625 ± 25 5 — 47-53Ω.cm
PAM-XIAMEN-WAFER- # III-V38 2 "GaP non poli N type 111 280 ± 10 1 — —
PAM-XIAMEN-WAFER- # III-V39 2 "InP SSP N type 100 500 ± 25 1 — —
PAM-XIAMEN-WAFER- # III-V40 4 " DSP Semi-isolante 600 ± 20 4 EPD700-800 1.0E8-1.2E8Ω.cm
PAM-XIAMEN-WAFER- # III-V41 4 " DSP Semi-isolante 600 ± 20 10 EPD600 1.0E8-3.0E8Ω.cm
PAM-XIAMEN-WAFER- # III-V42 4 " DSP Semi-isolante 600 ± 20 10 EDP800-1200 1.0E8-2.7E8Ω.cm
PAM-XIAMEN-WAFER- # III-V43 2 "GaP DSP / SSP N type 111 280 ± 10 1 — —
PAM-XIAMEN-WAFER- # III-V44 2 "GaP SSP P111 280 ± 10 14 — —
PAM-XIAMEN-WAFER- # III-V45 3 " DSP Semi-isolante 550 ± 25 26 EPD500-700 3.9E7-8.1E7Ω.cm
PAM-XIAMEN-WAFER- # III-V46 4 ″ Ge SSP P100 9 ° 175 ± 15 10 — —
PAM-XIAMEN-WAFER- # III-V47 2 "GaP DSP P111 280 ± 10 10 — —
PAM-XIAMEN-WAFER- # III-V48 4 " SSP Type N 15 ° 350um 15 — —
PAM-XIAMEN-WAFER- # III-V49 2 " SSP N type 111 BSide 350 ± 25 61 EPD≤5000 0,8 × 10-3 ~ 9 × 10-3
PAM-XIAMEN-WAFER- # III-V50 2 " SSP N111 A côté 350 ± 25 71 EPD≤5000 0,8 × 10-3 ~ 9 × 10-3
PAM-XIAMEN-WAFER- # III-V51 2 " SSP Semi-isolant 111 350 ± 25 103 EPD≤5000 > 1E7
PAM-XIAMEN-WAFER- # III-V52 2 " SSP Type N15 ° 350um 25 — —
PAM-XIAMEN-WAFER- # III-V53 6 " DSP Semi-isolant 2 ° 625 ± 25 39 — 1.2E8-1.7E8
PAM-XIAMEN-WAFER- # III-V54 2 " DSP Semi-isolante 500 ± 25 13 — —
PAM-XIAMEN-WAFER- # III-V55 2 "InP SSP Semi-isolante 350 ± 25 2 EPD <50 —
PAM-XIAMEN-WAFER- # III-V56 2 " DSP Semi-isolante 500 ± 20 26 EPD200-300 1E8-1.13E8
PAM-XIAMEN-WAFER- # III-V57 2 " DSP Semi-isolante 500 ± 20 77 EPD600-301 1.72E8-1.83E8
PAM-XIAMEN-WAFER- # III-V58 6 " DSP Type N 15 ° 550 ± 25 23 EPD200-500 0,4E18-0,9E18
PAM-XIAMEN-WAFER- # III-V59 2 " SSP Type N 15 ° 350 ± 15 18 EPD1000-1200 1,87E-03 à 3,50E-03
PAM-XIAMEN-WAFER- # III-V60 4 " SSP Type N 2 ° 640 ± 25 15 EPD73-441 1.25E-03 à 4.00E-03
PAM-XIAMEN-WAFER- # III-V61 2 " DSP Type P 350 ± 25 14 EPD600-900 4.3E-3 à 6.0E-3
PAM-XIAMEN-WAFER- # III-V62 2 " SSP Type N 350 ± 15 78 EPD100 —
PAM-XIAMEN-WAFER- # III-V63 3 " SSP N100 4 ° 330 ± 20 3 EPD100-300 1.1E-3 à 2.0E-3
PAM-XIAMEN-WAFER- # III-V64 2 ″ Ge DSP Type N semi-isolant 475-525 16 — 57,4 à 63,12Ω.cm
PAM-XIAMEN-WAFER- # III-V65 2 " SSP Semi-isolant N100 350 ± 20 7 EPD1400-1600 0,5E8 à 0,6E8
PAM-XIAMEN-WAFER- # III-V66 2 " SSP Semi-isolant N100 350 ± 20 3 EPD1300-1500 1,5E8 à 2,8E8
PAM-XIAMEN-WAFER- # III-V67 2 pouces InSb DSP Semi-isolant N100 500 ± 25 1 EPD <200 —

 

Êtes-vous à la recherche d'une plaquette semi-conductrice composée, y compris une plaquette de GaAs, une plaquette de germanium, une plaquette InP, une plaquette InSb?
PAM-XIAMEN est la société que vous souhaitez affiner, qui propose une plaquette semi-conductrice composée comprenant une plaquette de GaAs, une plaquette de Germanium, une plaquette InP, une plaquette InSb ou une plaquette semi-conductrice composée personnalisée, y compris une plaquette de GaAs, une plaquette de Germanium, une plaquette InP, une plaquette InSb. Envoyez-nous une demande pour en savoir plus sur la plaquette semi-conductrice composée, y compris la plaquette de GaAs, la plaquette de Germanium, la plaquette InP, la plaquette InSb, notre équipe de groupe peut vous fournir une plaquette de semi-conducteur composé, y compris la plaquette de GaAs, la plaquette de Germanium, la plaquette InP, la plaquette InSb et le support technologique.

PAM-XIAMEN peut vous offrir une technologie et un support de wafer
Pour plus d'information, veuillez visiter notre site web: https://www.powerwaywafer.com,
envoyez un courriel à sales@powerwaywafer.com et powerwaymaterial@gmail.com

2019-11-27

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