Nouvelles

12″ Dummy Grade Silicon Wafer Thickness 650-700um

PAM XIAMEN offers 12″ Dummy Grade Silicon Wafer Thickness 650-700um. 12” 300mm dummy grade wafers Surface is double side polished thickness 650-700um V Notch(SMI STD) slight scratch(with no stains or heavy/deep scratches) For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in [...]

12″ Dummy Grade Silicon Wafer Thickness 700-730um

PAM XIAMEN offers 12″ Dummy Grade Silicon Wafer Thickness 700-730um. 12” 300mm dummy grade wafers Surface is double side polished thickness 700-730um V Notch(SMI STD) slight scratch(with no stains or heavy/deep scratches) For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in [...]

4″ FZ Prime Silicon Wafer

PAM XIAMEN offers 4″ FZ Prime Silicon Wafer. 4”FZ P-type orientation 111 thickness 400±15 Resistivity 15000Ωcm polished side 1 Acid etched side 2 life time 1000 SEMI STD DISLOCATION DENSITY 500 max/ cm2 TTV/TAPER 12μm max For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com [...]

4″ CZ Prime Silicon Wafer

PAM XIAMEN offers 4″ CZ Prime Silicon Wafer. 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm, orientation (100)(+/-0.5度), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), Particle: 0.33µm, <qty30 ttv ≤ 10um,warp ≤30um One side sputtering [...]

8″ CZ Dummy Grade Silicon Wafer

PAM XIAMEN offers 8″ CZ Dummy Grade Silicon Wafer. 8inch (5 pieces) Dummy CZ-Si wafer 8 inch (+/- 0.5 mm), thickness = 725 ± 50 µm, 0rientation (no matter) , polished (no matter), p or n type (no matter) , ? Ohm cm (no matter) For more information, please visit [...]

La concentration des porteurs et des mesures d'épaisseur de GaAs de type n épitaxiale de la couche de tension de cellule en anodisation

The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by C-V measurements and the thicknesses [...]

Les avantages et les problèmes qui subsistent de substrats de GaN state-of-the-art autoportant m-plan par épitaxie en phase vapeur d'halogénure de m-plan InGaN croissance épitaxiale

Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy (HVPE) for m-plane InxGa1 − xN epitaxial film growth by metalorganic vapor phase epitaxy are described. Because of the low threading dislocation and basal-plane stacking fault densities, improved quantum efficiency and short radiative [...]

substrat nouveau

PAM XIAMEN offers New substrate. GYSGG (Gd0.63Y2.37Sc2Ga3O12) Substrate (111 ) 10x10x0.5 mm, 1 SP NGG (Nd3Ga5O12) Substrate (111 ) 10x10x0.5 mm, 1 SP YSGG (Y3Sc2Ga3O12) Substrate (111 ) 10x10x0.5 mm, 1 SP Bi-Crystal LSAT Substrate (100) 10x10x0.5 mm, 1sp, 24 Degree SrTiO3 Substrate with Step Surface & Ti terminated [...]