GaN HEMT TRANCHE ÉPITAXIALE

Description du produit

GaN HEMT epitaxial wafer is a multilayer film grown epitaxially on a substrate, which usually includes a nucleation layer, a transition layer, a buffer layer, a channel layer, a barrier layer, a cap layer, and a passivation layer from bottom to top. The nucleation layer, like AlGaN or AlN, is used to prevent the substrate material from diffusing into the GaN epitaxial layer. The transition layer may contain hierarchical AlGaN, AlN/GaN superlattice or multilayer AlN to balance the stress between the GaN and the substrate. The higher the Al content in the barrier layer of AlGaN, the higher the 2DEG concentration at the heterojunction. Meanwhile, the lower the threshold voltage of the device, and the higher the current capacity. As the Al ratio increasing, the degree of heterogeneous crystal lattice mismatch will be higher, resulting in a decrease in gallium nitride HEMT electron mobility and a decrease in current capacity.

The High Electron Mobility Transistor (HEMT) is developed based on GaN with unique heterostructure and two-dimensional electron gas. The GaN HEMT advantages include high breakdown strength, low on-resistance and faster The switching speed, which is very suitable for medium and low voltage and medium and small power systems, such as travel adapters, wireless chargers, AC-DC converters, smart home appliances, etc. The epitaxial wafer with HEMT structure is more attractive currently for high-frequency converters, in which GaN HEMT breakdown voltage is 600~650 V. With the rapid development of gallium nitride HEMT epi technology, the price of GaN HEMT devices will be competitive, which can gain large GaN HEMT market for GaN HEMT manufacturers. Moreover, due to the gallium nitride HEMT reliability, it can be widely used in industrial fields, such as photovoltaic inverters, energy storage systems, and electric vehicles.

1. GaN HEMT Material: Available size:2”,4”,6”,8”:

More specific parameters of gallium nitride HEMT wafer for D-mode GaN HEMTs, E-mode GaN HEMTs, GaN HEMT power amplifier and RF, please refer to:

GaN sur Si pour la puissance, en mode D

GaN sur Si pour Power, E-Mode

GaN sur Si pour RF

GaN sur saphir pour Power

GaN sur saphir pour RF

GaN sur SiC pour RF

GaN sur GaN

We are expert in HEMT structure, we also offer GaN HEMT epi wafer for many years.
For silicon substrate, we need to know if you grow GaN HEMT on silicon for POWER or RF, it is different. If needed, please contact victorchan@powerwaywafer.com for details.
For SiC, you should use semi-insulating.
Or you can buy AlGaN/GaN HEMT structure on these three structure from us.

2. Now we show you an example as follows:

2.1  2 "(50,8 mm) de GaN HEMT épitaxiales gaufrettes

We offer 2″(50.8mm) gallium nitride HEMT Wafers, the GaN HEMT structure is as follows:

Structure (de haut en bas):

* GaN non dopé bouchon (2 ~ 3 nm de)

AlxGa1-XN (18 ~ 40 nm)

AlN (de couche tampon)

un GaN dopé (2 ~ 3um)

substrat de saphir

* Nous pouvons utiliser Si3N pour remplacer GaN sur le dessus, l'adhésion est forte, il est revêtu par pulvérisation cathodique ou PECVD.

2.2 AlGaN/GaN HEMT Epi Wafer on sapphire/GaN

2.3  2″(50.8mm),4″ (100mm)AlGaN/GaN HEMT Epi Wafer on Si

2.3.1 Specifications for Aluminium Gallium Nitride (AlGaN) / Gallium Nitride (GaN) À haute mobilité d'électrons transistor (HEMT) sur substrat de silicium.

2.3.2 Epi structure: Crack-free Epilayers

2.3.3 Electrical Properties of the AlGaN/GaN HEMT structure

2 DEG mobilité (à 300 K): ≥1,800 cm2 / Vs

2 DEG transport de feuille Densité (à 300 K): ≥0.9 × 1013 cm-2

RMS Rugosité (AFM): ≤ 0,5 nm (zone de numérisation 5,0 pm x 5,0 pm)

2.4  2″(50.8mm)AlGaN/GaN on sapphire

Pour la spécification de AlGaN / GaN sur le modèle de saphir, s'il vous plaît contacter notre service commercial: sales@powerwaywafer.com.

GaN HEMT Applications: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.

3. Explanation of AlGaN/Al/GaN HEMTs:

HEMT nitrures sont intensément développés pour des produits électroniques de grande puissance à haute fréquence d'amplification et des applications de commutation de puissance. Souvent, de hautes performances en fonctionnement continu est perdue lorsque le HEMT est activé - par exemple, le courant sur effondre lorsque le signal de grille est pulsé. On pense que ces effets sont liés à charger le piégeage qui masque l'effet de la porte sur le flux de courant. Field-plaques sur les électrodes de source et de grille ont été utilisées pour manipuler le champ électrique dans le dispositif, l'atténuation des phénomènes effondrement en cours.

4. GaN EpitaxialTechnology — Customized GaN epitaxy on SiC,Si and Sapphire substrate for HEMTs, LEDs:

GAN HEMT ÉPITAXIALES PLAQUETTES (GAN EPI-PLAQUETTES)

PAM XIAMEN Offers Epitaxial growth of AlGaN/GaN based HEMT on Si wafers

5. GaN Device:

GaN SBD

GaN HEMT

6. Test Characterization Equipment:

Résistance feuille Contactless

Cartographie Laser Thin Film Epaisseur

Haute température / humidité élevée Polarisation inverse

Choc Thermique

DIC Nomarski Microscope

Microscope à force atomique (AFM)

Défectivité surface de balayage

Haute température inverse Bias

Résistance feuille 4PP

Mobilité Contactless Salle

Cycle de température

Diffraction des rayons X (XRD) / Réflectance (XRR)

Epaisseur ellipsomètre

profilomètre

CV Tester

7. Foundry Fabrication:

we also offer foundry GaN HEMT fabrication in the following process as follows:

MOCVD épitaxie

Métal pulvérisation / E-Beam

Sec / humide en métal / diélectrique Etch

Thin Film PECVD / LPCVD / pulvérisation cathodique

RTA Recuit / four

Photolithographie (0.35um min. CD)

Implantation ionique

Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!

More fabrication services, please visit: GaN Fabrication Services for HEMT Devices

GaN/SiC HEMT epi-wafers

Aluminium gallium arsenide epi wafer

650V GaN FETs Chip for Fast Charge

GaN MOSFET Structure:

GaN MOSFET Structure on SiC Substrate

More about GaN HEMT structures, please read:

What Affects 2DEG of AlGaN/GaN HEMT Wafer?