Pengecam Radionuklid Mudah Alih CZT

Pengecam Radionuklid Mudah Alih CZT

Pengecam radionuklid PAM-NIS CZT adalah padat dan mudah alih dengan kelebihan berikut:

1) Resolusi tenaga kurang daripada 1.8% pada 662keV, yang lebih tinggi daripada pengesan scintillator;

2) Saiz pengesan lebih kecil daripada pengesan Ge, berfungsi pada suhu bilik tanpa penyejukan;

3) Ia boleh dicas semula lebih daripada 10000 kali dengan bateri terbina dalam;

4) Panjang kabel boleh disesuaikan

Untuk spesifikasi terperinci sila rujuk jadual di bawah:

Pengecam Radionuklid Mudah Alih CZT

1. Spesifikasi Pengecam Radionuklid CZT Mudah Alih

dimensi 227*327*104 mm3
Berat 5kg
Makmal Nuklida 50*55.5*90 mm3
Kabel 1.5m (Standard); boleh disesuaikan
Hayat Bateri 12 jam
Resolusi Tenaga <1.8%@662keV atau <2.5%@662keV @ suhu bilik
Julat Tenaga 20keV~3MeV
Julat Kadar Dos 0.1μSv/j~100mSv/j
Sensitiviti ≈200cps(μSv/j)
Channel 1K, 4K
Tahap IP IP 54
Sambungan data Bluetooth
Dimensi Pengesan Tailor made disediakan
Fungsi Lain Menstabilkan spektrum secara automatik

 

2. Ciri-ciri Pengecam Radionuklid Mudah Alih

Pengecam mempunyai ciri:

* Ketepatan tinggi

* Isyarat Quasi-Gaussian boleh dibaca

3. Aplikasi CZT Radionuclide Reconnizer

* Loji kuasa nuklear

* Perlindungan alam sekitar

* Keselamatan tanah air

Untuk produk tambahan sila layarihttps://www.powerwaywafer.com/cdznte-czt-wafer/czt-detector.html

Untuk maklumat lanjut, sila hubungi kami e-mel divictorchan@powerwaywafer.com dan powerwaymaterial@gmail.com.

2023-07-07

Kongsi siaran ini

Berkaitan Catatan

What is Carrier Mobility?

Carrier mobility is often used to refer to the overall movement of electrons and holes in semiconductors. Mobility refers to the average drift velocity of carriers (electrons and holes) under the action of a unit electric field. That is a measure of the speed [...]

2022-06-06pengarang meta
Doped or Undoped Germanium (Ge) Crystal | Ge Single Crystal Growth

PAM-XIAMEN, a leading germanium ingot manufacturer, has germanium (Ge) crystals for sale. Due to its scarcity of resources, excellent optical and physical properties, germanium material is widely used in high-tech fields such as fiber optic systems, infrared optical systems, electronics and solar applications, detectors, [...]

2021-07-01pengarang meta
FZ Silicon Ignot Diameter 80+1mm-2

PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm. FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity>30000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: https://www.powerwaywafer.com, [...]

2019-07-03pengarang meta
(11-22) Plane U-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (11-22) Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN(11-22)- U Dimension 380+/-50um Thickness 350 ±25 µm  430 ±25 µm Orientation (11-22) plane off angle toward A-axis 0 ±0.5° (11-22) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤  5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room   For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-08-20pengarang meta
PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer

PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer: Description Growth Method — MCZ Single crystal size inch 2 – 8 Conductivity Type — N P Doped elements — P/Sb B Crystal Orientation — <111> <110> <100> <111> <110> <100> Resistivity Ω.cm 0.0015-100 0.001-100 RRG % 20 20 Oxygen Concentration atoms/cm3 1.00E+18 1.00E+18 Carbon Concentration atoms/cm3 5.00E+16 5.00E+16 Diameter mm 55-157 55-157 Length mm 50-500 50-500 Dislocation EA/cm2 N/A N/A Swirl(After Oxidation) — N/A N/A Remarks：The above parameters can be customized.   FAQ about MCZ Silicon Wafers Q：This is just a curiosity, but let me ask about the production method of [...]

2019-02-27pengarang meta
Effect of annealing on the residual stress and strain distribution in CdZnTe wafers

Effect of annealing on the residual stress and strain distribution in CdZnTe wafers The effect of annealing on residual stress and strain distribution in CdZnTe wafers was studied based using an X-ray diffraction (XRD) method. The results proved the effectiveness of annealing on the reduction [...]

2016-01-20meta-author