Epi Wafer untuk Laser Diod
GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).
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Penerangan Produk
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:
| substrat bahan | Keupayaan bahan | panjang gelombang | Permohonan |
| GaAs | GaAs / GalnP / AlGaInP / GaInP | 635nm | |
| GaAs Based Epi-wafer | 650nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED | |
| GaAs / GalnP / AlGaInP / GaInP | 660nm | ||
| GaAs / AlGaAs / GalnP / AlGaAs / GaAs | 703nm | ||
| GaAs / GalnP / AlGaInP / GaInP | 780nm | ||
| GaAs / GalnP / AlGaInP / GaInP | 785nm | ||
| GaAs Based Epi-wafer | 800-1064nm | LD inframerah | |
| GaAs / GalnP / AlGaInP / GaInP | 808nm | LD inframerah | |
| GaAs Based Epi-wafer | 850nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED | |
| GaAs Based Epi-wafer | <870nm | Photo-pengesan | |
| GaAs Based Epi-wafer | 850-1100nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED | |
| GaAs / AlGaAs / GaInAs / AlGaAs / GaAs | 905nm | ||
| GaAs / AlGaAs / InGaAs / AlGaAs / GaAs | 950nm | ||
| GaAs Based Epi-wafer | 980nm | LD inframerah | |
| InP Based Epi-wafer | 1250-1600nm | Avalanche foto-pengesan | |
| GaAs Based Epi-wafer | 1250-1600nm/>2.0um (InGaAs absorptive layer) | Photo-pengesan | |
| GaAs Based Epi-wafer | 1250-1600nm/<1.4μm (InGaAsP absorptive layer) | Photo-pengesan | |
| InP Based Epi-wafer | 1270-1630nm | DFB laser | |
| GaAsP / GaAs / GaAs substrat | 1300nm | ||
| InP Based Epi-wafer | 1310nm | FP laser | |
| GaAsP / GaAs / GaAs substrat | 1550nm | FP laser | |
| 1654nm | |||
| InP Based Epi-wafer | 1900nm | FP laser | |
| 2004nm |
About LD Epitaxy Wafer Applications & Market
The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.
The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.
Catatan：
Kerajaan China telah mengumumkan had baharu untuk pengeksportan bahan Gallium (seperti GaAs, GaN, Ga2O3, GaP, InGaAs dan GaSb) dan bahan Germanium yang digunakan untuk membuat cip semikonduktor. Bermula dari 1 Ogos 2023, mengeksport bahan ini hanya dibenarkan jika kami mendapat lesen daripada Kementerian Perdagangan China. Harap untuk pemahaman dan kerjasama anda!
Please see below detail specification of LD epitaxy wafer:
808nm laser diode epi wafers-2
Wafer Laser Kuasa Tinggi 1060nm
GaAs Epitaxy with Thick Growth
GaAs based Epi Structure MOCVD Grown for Light Emitter
Narrow InGaAsP Quantum Well Grown on InP Wafer
InAs Quantum Dot Layers on InP Substrate
Chips Pemancar Single
Single-pemancar LD Chip 755nm @ 8W
Single-pemancar LD Chip 808nm @ 8W
Single-pemancar LD Chip 808nm @ 10W
Single-pemancar LD Chip 830nm @ 2W
Single-pemancar LD Chip 880nm @ 8W
Single-pemancar LD Chip 900 + nm @ 10W
Single-pemancar LD Chip 900 + nm @ 15W
Single-pemancar LD Chip 905nm @ 25W
Single-pemancar LD Chip 1470nm @ 3W
PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:
LD Bare Bar
LD Bare Bar untuk 780nm @ rongga 2.5mm
LD Bare Bar untuk 808nm @ rongga 2mm
LD Bare Bar untuk 808nm @ rongga 1.5mm
LD Bare Bar untuk 880nm @ rongga 2mm
LD Bare Bar untuk 940nm @ rongga 2mm
LD Bare Bar untuk 940nm @ rongga 3mm
LD Bare Bar untuk 940nm @ rongga 4mm
LD Bare Bar untuk 940nm @ rongga 2mm
LD Bare Bar untuk 976nm @ rongga 4mm