Epi Wafer untuk Laser Diod

Epi Wafer untuk Laser Diod

GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

  • Penerangan

Penerangan Produk

Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:

substrat bahan Keupayaan bahan panjang gelombang Permohonan
GaAs GaAs / GalnP / AlGaInP / GaInP 635nm  
GaAs Based Epi-wafer 650nm Vertical Cavity Surface Emitting Laser (VCSEL)
GaAs / GalnP / AlGaInP / GaInP 660nm  
GaAs / AlGaAs / GalnP / AlGaAs / GaAs 703nm  
GaAs / GalnP / AlGaInP / GaInP 780nm  
GaAs / GalnP / AlGaInP / GaInP 785nm  
GaAs Based Epi-wafer 800-1064nm LD inframerah
GaAs / GalnP / AlGaInP / GaInP 808nm LD inframerah
GaAs Based Epi-wafer 850nm Vertical Cavity Surface Emitting Laser (VCSEL)
GaAs Based Epi-wafer <870nm Photo-pengesan
GaAs Based Epi-wafer 850-1100nm Vertical Cavity Surface Emitting Laser (VCSEL)
GaAs / AlGaAs / GaInAs / AlGaAs / GaAs 905nm  
GaAs / AlGaAs / InGaAs / AlGaAs / GaAs 950nm  
GaAs Based Epi-wafer 980nm LD inframerah
InP Based Epi-wafer 1250-1600nm Avalanche foto-pengesan
GaAs Based Epi-wafer 1250-1600nm/>2.0um
(InGaAs absorptive layer)
GaAs Based Epi-wafer 1250-1600nm/<1.4μm
(InGaAsP absorptive layer)
InP Based Epi-wafer 1270-1630nm DFB laser
GaAsP / GaAs / GaAs substrat 1300nm  
InP Based Epi-wafer 1310nm FP laser
GaAsP / GaAs / GaAs substrat 1550nm FP laser
InP Based Epi-wafer 1900nm FP laser


About LD Epitaxy Wafer Applications & Market

The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.

The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.


Kerajaan China telah mengumumkan had baharu untuk pengeksportan bahan Gallium (seperti GaAs, GaN, Ga2O3, GaP, InGaAs dan GaSb) dan bahan Germanium yang digunakan untuk membuat cip semikonduktor. Bermula dari 1 Ogos 2023, mengeksport bahan ini hanya dibenarkan jika kami mendapat lesen daripada Kementerian Perdagangan China. Harap untuk pemahaman dan kerjasama anda!

Please see below detail specification of LD epitaxy wafer:

VCSEL Laser Wafer Chip

VCSEL Laser Epi Wafer

703nm laser wafer diod epi

808nm laser diod epi wafer-1

780nm laser wafer diod epi

650nm laser wafer diod epi

785nm laser wafer diod epi

808nm laser diode epi wafers-2

850nm laser wafer diod epi

905nm laser wafer diod epi

940nm laser diode epi wafer

950nm laser wafer diod epi

Wafer Laser Kuasa Tinggi 1060nm

1300nm Laser Diode Wafer

1460nm Pump Laser Diode Wafer

1550nm laser wafer diod epi

1654nm laser wafer diod epi

2004nm laser wafer diod epi

GaAs Epitaxy with Thick Growth

GaAs based Epi Structure MOCVD Grown for Light Emitter

Narrow InGaAsP Quantum Well Grown on InP Wafer

InAs Quantum Dot Layers on InP Substrate

Wafer Laser FP (Fabry-Perot).


Quantum Cascade Laser Wafer


Chips Pemancar Single

Single-pemancar LD Chip 755nm @ 8W

Single-pemancar LD Chip 808nm @ 8W

Single-pemancar LD Chip 808nm @ 10W

Single-pemancar LD Chip 830nm @ 2W

Single-pemancar LD Chip 880nm @ 8W

Single-pemancar LD Chip 900 + nm @ 10W

Single-pemancar LD Chip 900 + nm @ 15W

Single-pemancar LD Chip 905nm @ 25W

Single-pemancar LD Chip 1470nm @ 3W

PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:

LD Bare Bar

LD Bare Bar untuk 780nm @ rongga 2.5mm

LD Bare Bar untuk 808nm @ rongga 2mm

LD Bare Bar untuk 808nm @ rongga 1.5mm

LD Bare Bar untuk 880nm @ rongga 2mm

LD Bare Bar untuk 940nm @ rongga 2mm

LD Bare Bar untuk 940nm @ rongga 3mm

LD Bare Bar untuk 940nm @ rongga 4mm

LD Bare Bar untuk 940nm @ rongga 2mm

LD Bare Bar untuk 976nm @ rongga 4mm

LD Bare Bar untuk 1470nm @ rongga 2mm

LD Bare Bar untuk 1550nm @ rongga 2mm