ZnTe Einkristallsubstrat

ZnTe Einkristallsubstrat

PAM XIAMEN bietet ZnTe Einkristallsubstrat.

ZnTe-Einkristallsubstrat, undotiert, N-Typ, (110) 10x10x 0.5mm, 2sp

ZnTe zufällige Orientierung, n-Typ, 10x10x0.5 mm, 2sp

ZnTe Einkristallsubstrat, undotiert, P-Typ (100) 10x10x1.0mm, einseitig mit scratch / Dig 60/40

ZnTe, N-Typ, (110) 10x10x1.0mm, 2sp

Für weitere Informationen, besuchen Sie bitte unsere Website: https://www.powerwaywafer.com,
Bitte senden Sie uns E-Mail an sales@powerwaywafer.com und powerwaymaterial@gmail.com

Gefunden 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) ist ein führender Hersteller von Halbleitermaterial in China.PAM-XIAMEN entwickeln fortschrittliches Kristallwachstum und die Epitaxie-Technologien, Herstellungsverfahren, engineered Substrate und Halbleitervorrichtungen.PAM-Xiamens Technologien ermöglichen eine höhere Leistung und geringere Kosten für Halbleiter-Wafer herzustellen.

Vor 1990 sind wir der Physik kondensierter Materie Forschungszentrum angegeben besaß. Im Jahr 1990 Zentrum Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) ins Leben gerufen, jetzt ist es ein führender Hersteller von Verbindungshalbleitermaterial in China.

2019-05-21

Teile diesen Beitrag

Verbunden Beiträge

4″FZ Silicon Ignot-3

PAM XIAMEN offers 4″FZ Silicon Ignot. Silicon ingot, per SEMI, 100.7±0.3mmØ, FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm, NO Flats. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, MCC Lifetime>1,000µs For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material [...]

2019-07-04Meta-Autor
Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process

MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation [...]

2013-09-04Meta-Autor
New Process Results in Smoother Indium Antimonide Substrates

We specialize in providing antimonide wafers, like InSb wafer: https://www.powerwaywafer.com/compound-semiconductor/insb-wafer.html. In addition, we will offer technology support for you. Here we share a paper “New Process Results in Smoother Indium Antimonide Substrates”, which is about modified chemomechanical polishing of InSb wafer. Reprinted from: spie.org Published by: Patrick [...]

2022-07-08Meta-Autor
Ultra Thin GaAs Wafer

PAM-XIAMEN offers Ultra Thin GaAs Wafer with both side polished, which is for high-end products in the communication electronics or optoelectronics. The general thickness of the existing GaAs wafer is over 350μm, and the target thickness of the ultra-thin grinding disc is 100μm. PAM190709-GAAS with n type and undoped [...]

2020-05-14Meta-Autor
Wafer Processing Service

PAM-XIAMEN participates in the design and processing of MEMS and compound semiconductor GaAs microwave integrated circuit (GaAs MMIC) devices, and focuses on the research, development, production and service of micro-nano sensors, micro-electromechanical systems (MEMS), micro-nano manufacturing and compound semiconductor GaAs chips. We are a [...]

2021-11-30Meta-Autor
4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm-3

PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm. PRIME WAFERS SILICIUM CZ DIAMETER 4 inch (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 525µm +/-25µm SSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 8 – [...]

2019-07-05Meta-Autor