InP-Wafer

PAM-XIAMEN offers VGF InP(Indium Phosphide) wafer with prime or test grade including undoped, N type or semi-insulating. The mobility of InP wafer is different in different type, undoped one>=3000cm2/V.s, N type>1000 or 2000cm2V.s(depends on different doping concentration), P type: 60+/-10 or 80+/-10cm2/V.s(depends on different Zn doping concentration), and semi-insulting one>2000cm2/V.s, the EPD of Indium Phosphide is below 500/cm2 normally.

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Produktbeschreibung

InP-Wafer

PAM-XIAMEN, a leading InP wafer supplier, offers Compound Semiconductor InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating. The InP wafer orientation (111) or (100) is available. And the dopants can be Sulphur, Sn(Tin), Zinc or customs. The Laser Mark as specified on backside of InP wafer along with primary flat. The orientation with slight deflection angle is available, such as (100)0.075° towards [110]]±0.025°.

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (“zinc blende”) crystal structure, identical to that of GaAs and most of the III-V semiconductors. Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide [clarification needed] at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. Indium phosphide wafers are used in high-power and high-frequency electronics [citation needed] because of the superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. The InP wafer size we can offer is 2”, 3” and 4”, and the InP wafer thickness will be 350~625um.

Hier ist die ausführliche Beschreibung: 

2″ InP Wafer Specification
Artikel Specifications
Dotierstoff N-Typ N-Typ P-Typ SI-type
Conduction Type undotierte Sulphur Zinc lron
Wafer Diameter 2 "
Wafer Orientation (100)±0.5°
Waferdicke Min:325                        Max:375
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration 3×1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70×103cm2/V.s >1000cm2/V.s
Der spezifische Widerstand N/A N/A N/A N/A
EPD <1000cm-2 <500cm-2 <1×103cm-2 <5×103cm-2
TTV <10um
BOW <10um
WARP <12um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 

2″ P Type InP Wafer Specification 

Artikel Parameter UOM
Material InP
Conduct Type/Dopant S-C-P/Zn
Klasse Prime
Diameter: 50.5±0.4 mm
Orientation: (100)±0.5°
Orientation Angle: /
Thickness: Min:325                        Max:375 um
Carrier Concentration: Min:0.6E18                   Max:3E18 cm-3
Resistivity: Min:/                              Max:/ ohm.cm
Mobility: Min:/                              Max:/ cm-2/V.sec
EPD: Ave<:1000                   Max<:/ cm-2
TTV: Max:10 um
TIR: Max:10 um
BOW: Max:10 um
Warp: Max:15 um
Flat Option: EJ
Primary Flat Orientation: (0-1-1)
Primary Flat Length: 16±1 mm
Secondary Flat Orientation: (0-11)
Secondary Flat Length: 7±1 mm
Suface: Side 1:Polished              Side 2:etched
Edge Rounding 0.25(Conform to SEMI Standards) mmR
Particle Count: /
Package individual container filled with  N2
Epi-ready Yes
Laser Marking Back side major flat
Remark: Special specifications will be discussed separately

 

3″ InP Wafer Specification 

Artikel Specifications
Dotierstoff N-Typ N-Typ P-Typ SI-type
Conduction Type undotierte Sulphur Zinc lron
Wafer Diameter 3″
Wafer Orientation (100)±0.5°
Waferdicke 600±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3×1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70×103cm2/V.s >1000cm2/V.s
Der spezifische Widerstand N/A N/A N/A N/A
EPD <1000cm-2 <500cm-2 <1×103cm-2 <5×103cm-2
TTV <12um
BOW <12um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 

 4″ InP Wafer Specification 

Artikel Specifications
Dotierstoff N-Typ N-Typ P-Typ SI-type
Conduction Type undotierte Sulphur Zinc lron
Wafer Diameter 4″
Wafer Orientation (100)±0.5°
Waferdicke 600±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3×1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70×103cm2/V.s >1000cm2/V.s
Der spezifische Widerstand N/A N/A N/A N/A
EPD <1000cm-2 <500cm-2 <1×103cm-2 <5×103cm-2
TTV <15um
BOW <15um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 

PL(Photoluminescence) Test of Indiumphosphid Wafer

We measure InP wafers by Peak Lambda, Peak int, and FWHM, the spectra mapping is as follows:

spectra mapping of InP wafer

 

About InP Wafer Application

As a new type of compound semiconductor material, InP wafer market share is increasing gradually. Due to the excellent indium phosphide properties, the performance of microwave power source devices, microwave amplifiers and gate FETs fabricated on InP material will be better than those fabricated on existing gallium arsenide materials. Indium phosphide heterojunction lasers are also extremely promising light sources in optical fiber communications.

InP wafer fabrication for devices, like growing millimeter wave microelectronic devices and optoelectronic device materials for optical fiber communications, is widely used. With the continuous improvement of device performance and the reduction of device size, the quality requirements for indium phosphide wafers are getting higher and higher. Therefore, the InP wafer process is optimizing gradually.

The the typical values is see below data:

Peak Lambda(nm) Peak Int FWHM(nm)
1279.4 7.799 48.5
1279.8 5.236 44.6

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