Obleas de diodo láser de 2004 nm

Obleas de diodo láser de 2004 nm

PAM XIAMEN ofrece obleas de diodos láser de 2004 nm.

Longitudes de onda centrales disponibles: 1970 nm – 2051 nm
Wavelength Tolerance: +/- 1nm
CW Output Power (typical): 3mW (out of fiber)
SMSR (typical): >40 dB
Optical Linewidth: < 1.5 MHz
Temperature Tuning Coefficient (typical): 0.1 nm/°C
Current Tuning Coefficient (typical): 12 pm/mA
Slope Efficiency (typical): 0.12 mW/mA

Para obtener más información, por favor visite nuestro sitio web:https://www.powerwaywafer.com,
send us email at ventas@powerwaywafer.comypowerwaymaterial@gmail.com

Fundada en 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) es un fabricante líder de material semiconductor en China. PAM-XIAMEN desarrolla tecnologías avanzadas de epitaxia y crecimiento de cristales, procesos de fabricación, sustratos de ingeniería y dispositivos semiconductores. Las tecnologías de PAM-XIAMEN permiten un mayor rendimiento y un menor coste de fabricación de obleas semiconductoras.

La calidad es nuestra primera prioridad. PAM-XIAMEN cumple con ISO9001:2008, posee y comparte cuatro fábricas modernas que pueden proporcionar una amplia gama de productos calificados para satisfacer las diferentes necesidades de nuestros clientes, y cada pedido debe manejarse a través de nuestro riguroso sistema de calidad. Se proporciona un informe de prueba para cada envío, y cada oblea son garantía.

2019-03-13

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