basado GaN LED epitaxial

basado GaN LED epitaxial

GaN de PAM-XIAMEN (nitruro de galio) a base de LED oblea epitaxial es para diodos emisores de luz de ultra alto brillo azul y verde (LED) y los diodos láser (LD) de aplicación.

  • Descripción

Descripción del Producto

The LED epitaxial wafer is a substrate heated to an appropriate temperature. The LED wafer material is the cornerstone of the technology development for the semiconductor lighting industry. Different substrate materials require different LED epitaxial wafer growth technology, chip processing technology and device packaging technology. The substrate for LED epi wafer determines the development route of semiconductor lighting technology. To achieve luminous efficiency, epitaxial wafer suppliers pay more attention to GaN based LED epitaxial wafer, since the epitaxial wafer price is in low cost, and the epi wafer defect density is small. LED epi wafer advantage on GaN substrate is the realization of high efficiency, large area, single lamp and high power, which make the process technology simplify and improve the large yield rate. The development prospects of the LED epi wafer market are optimistic.

1. LED Wafer List

LED Epitaxial Wafer

Artículo Tamaño Orientación Emission Wavelength Thickness   Sustrato Superficie Usable area
 PAM-50-LED-BLUE-F 50mm 0°±0.5° blue light 445-475nm 425um+/-25um Sapphire P/L >90%
 PAM-50-LED-BLUE-PSS 50mm 0°±0.5° blue light 445-475nm 425um+/-25um Sapphire P/L >90%
 PAM-100-LED-BLUE-F 100mm 0°±0.5° blue light 445-475nm / Sapphire P/L >90%
 PAM-100-LED-BLUE-PSS 100mm 0°±0.5° blue light 445-475nm / Sapphire P/L >90%
 PAM-150-LED-BLUE 150mm 0°±0.5° blue light 445-475nm / Sapphire P/L >90%
 PAM-100-LED-BLUE-SIL 50mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-100-LED-BLUE-SIL 100mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-150-LED-BLUE-SIL 150mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-200-LED-BLUE-SIL 200mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-50-LED-GREEN-F 50mm 0°±0.5° green light 510-530nm 425um+/-25um Sapphire P/L >90%
 PAM-50-LED-GREEN-PSS 50mm 0°±0.5° green light 510-530nm 425um+/-25um Sapphire P/L >90%
 PAM-100-LED-GREEN-F 100mm 0°±0.5° green light 510-530nm / Sapphire P/L >90%
 PAM-100-LED-GREEN-PSS 100mm 0°±0.5° green light 510-530nm / Sapphire P/L >90%
 PAM-150-LED-GREEN 150mm 0°±0.5° green light 510-530nm / Sapphire P/L >90%
 PAM-100-LED-RED-GAAS-620 100mm 15°±0.5° red light 610-630nm / GaAs P/L >90%
PAM210527-LED-660 100mm 15°±0.5° red light 660nm / GaAs P/L >90%
 PAM-210414-850nm-LED 100mm 15°±0.5° IR 850nm / GaAs P/L >90%
 PAMP21138-940LED 100mm 15°±0.5° IR 940nm / GaAs P/L >90%
 PAM-50-LED-UV-365-PSS 50mm 0°±0.5° UVA 365 nm 425um+/-25um Sapphire    
 PAM-50-LED-UV-405-PSS 50mm 0°±0.5° UVA 405 nm 425um+/-25um Sapphire    
 PAM-50-LED-UVC-275-PSS 50mm 0°±0.5° UVC 275nm 425um+/-25um Sapphire    
 PAM-50-LD-BLUE-405-SIL 50mm 0°±0.5° blue light 405nm / Silicon P/L >90%
 PAM-50-LD-BLUE-450-SIL 50mm 0°±0.5° blue light 450nm / Silicon P/L >90%


As a LED epitaxial wafer manufacturer, PAM-XIAMEN can offer activated and unactivated GaN Epi LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers. LED epitaxial wafer on GaN is grown by MOCVD with PSS or flat sapphire for LCD back light, mobile, electronic or UV(ultraviolet), with blue or green or red emission, including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.
2. InGaN/
GaN(gallium nitride) based LED Epitaxial Wafer

GaN en Al2O3-2” Especificación epi oblea (LED epitaxial)

White: 445~460 nm
Blue:  465~475 nm
Green: 510~530 nm

Técnica 1. Crecimiento - MOCVD
diámetro 2.Wafer: 50,8 mm
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3) or Flat Sapphire
4.Wafer tamaño del patrón: 3X2X1.5μm

3. Wafer structure:

estructura de capas Thickness(μm)
p-GaN 0.2
p-AlGaN 0.03
InGaN / GaN (área activa) 0.2
n-GaN 2.5
u- GaN 3.5
Al2O3 (sustrato) 430

 

4. Wafer parameters to make chips:

em Color Tamaño de chip Características Apariencia
PAM1023A01 Azul 10mil x 23mil Iluminación
Vf = 2,8 ~ 3.4V LCD luz de fondo
Po = 18 ~ 25 mW aparatos móviles
Wd = 450 ~ 460nm Consumidor de electronicos
PAM454501 Azul 45mil x 45mil Vf = 2,8 ~ 3.4V La iluminación general
Po = 250 ~ 300 mW LCD luz de fondo
Wd = 450 ~ 460nm exhibición al aire libre

 

5. Application of LED epitaixal wafer: 

*If you need to know more detail information of Blue LED Epitaxial Wafer, please contact with our sales departments

Iluminación
LCD luz de fondo
aparatos móviles
Consumidor de electronicos

6. Specification of LED Epi Wafer as an example:

Spec PAM190730-LED
– size : 4 inch
– WD : 455 ± 10nm
– brightness : > 90mcd
– VF : < 3.3V
– n-GaN Thickness : <4.1㎛
– u-GaN thickness : <2.2㎛
– substrate : patterned sapphire substrate (PSS)

7.GaAs(Gallium arsenide)based LED Wafer Material:

En cuanto a GaAs oblea LED, que se cultivan por MOCVD, ver más abajo la longitud de onda de GaAs LED oblea:
Rojo: 585 nm, 615 nm, 620 ~ 630nm
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573nm

8. Definition of LED Epitaxial Wafer:

What we offer is bare LED epi wafer or not processed wafer without lithography processes, n- and metals contacts, etc. And you can fabricate the LED chip using your fabrication equipment for different application such as nano optoelectronics research.

 

Por estas GaAs detalle Datos de obleas de LED, por favor visite:GaAs Epi oblea por LED

Para especificaciones de obleas de LED UV, por favor visite:UV LED Epi Wafer  

Para la oblea de silicio LED en las especificaciones, visite:Wafer LED sobre silicio

Para especificaciones azul GaN LD oblea, por favor visite: Azul GaN LD oblea

GaN LED Epi on Sapphire

850nm and 940nm infrared LED wafer

850-880nm and 890-910nm Red Infrared AlGaAs /GaAs LED Epi-Wafer

630nm GaAs LED Wafer

GaN Wafers to Fabricate LED Devices

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