Epi oblea por un diodo láser
GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).
- Descripción
Descripción del Producto
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:
| material del sustrato | Capacidad de materiales | Longitud de onda | Aplicación |
| GaAs | GaAs / GalnP / AlGaInP / GaInP | 635nm | |
| GaAs Based Epi-oblea | 650nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED |
|
| GaAs / GalnP / AlGaInP / GaInP | 660nm | ||
| GaAs / AlGaAs / GalnP / AlGaAs / GaAs | 703nm | ||
| GaAs / GalnP / AlGaInP / GaInP | 780nm | ||
| GaAs / GalnP / AlGaInP / GaInP | 785 nm | ||
| GaAs Based Epi-oblea | 800-1064nm | LD infrarrojos | |
| GaAs / GalnP / AlGaInP / GaInP | 808nm | LD infrarrojos | |
| GaAs Based Epi-oblea | 850nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED |
|
| GaAs Based Epi-oblea | <870nm | Fotodetector | |
| GaAs Based Epi-oblea | 850-1100nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED |
|
| GaAs / AlGaAs / GaInAs / AlGaAs / GaAs | 905nm | ||
| GaAs / AlGaAs / InGaAs / AlGaAs / GaAs | 950nm | ||
| GaAs Based Epi-oblea | 980nm | LD infrarrojos | |
| InP Based Epi-oblea | 1250-1600nm | Avalancha foto-detector | |
| GaAs Based Epi-oblea | 1250-1600nm/>2.0um (InGaAs absorptive layer) |
Fotodetector | |
| GaAs Based Epi-oblea | 1250-1600nm/<1.4μm (InGaAsP absorptive layer) |
Fotodetector | |
| InP Based Epi-oblea | 1270-1630nm | láser DFB | |
| sustrato GaAsP / GaAs / GaAs | 1300nm | ||
| InP Based Epi-oblea | 1310 | láser FP | |
| sustrato GaAsP / GaAs / GaAs | 1550 | láser FP | |
| 1654nm | |||
| InP Based Epi-oblea | 1900nm | láser FP | |
| 2004nm |
About LD Epitaxy Wafer Applications & Market
The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.
The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.
Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!
Please see below detail specification of LD epitaxy wafer:
láser de diodo 703nm epi oblea
808nm láser de diodo epi oblea-1
láser de diodo de 780 nm epi oblea
láser de diodo de 650 nm epi oblea
láser de diodo 785 nm epi oblea
808nm laser diode epi wafers-2
láser de diodo de 850 nm epi oblea
láser de diodo de 905 nm epi oblea
láser de diodo de 950 nm epi oblea
láser de diodo de 1550 nm epi oblea
1654nm láser de diodo epi oblea
2004nm láser de diodo epi oblea
GaAs Epitaxy with Thick Growth
GaAs based Epi Structure MOCVD Grown for Light Emitter
Narrow InGaAsP Quantum Well Grown on InP Wafer
InAs Quantum Dot Layers on InP Substrate
Chips individuales del emisor
Single-emisor LD viruta 755nm @ 8W
Single-emisor LD viruta 808nm @ 8W
Single-emisor LD viruta 808nm @ 10W
Single-emisor LD viruta 830nm @ 2W
Single-emisor LD viruta 880nm @ 8W
Single-Chip de emisor LD 900 nm + @ 10W
Single-Chip de emisor LD 900 nm + @ 15W
Single-emisor LD viruta 905nm @ 25W
Single-emisor LD viruta 3W @ 1470nm
PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:
LD Bare Bar
LD Bare Pub en 780 nm de 2,5 mm @ cavidad
LD Bare barra de 808nm 2 mm @ cavidad
LD Bare barra de 808nm de 1,5 mm @ cavidad
LD Bare barra de 880nm 2 mm @ cavidad
LD Bare barra de 940nm 2 mm @ cavidad
LD Bare barra de 3 mm 940nm @ cavidad
LD Bare barra de 940nm 4 mm @ cavidad
LD Bare barra de 940nm 2 mm @ cavidad
LD Bare barra de 976nm 4 mm @ cavidad