Epi oblea por un diodo láser

Epi oblea por un diodo láser

GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

  • Descripción

Descripción del Producto

Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:

material del sustrato Capacidad de materiales Longitud de onda Aplicación
GaAs GaAs / GalnP / AlGaInP / GaInP 635nm  
GaAs Based Epi-oblea 650nm Vertical Cavity Surface Emitting Laser (VCSEL)
RCLED
GaAs / GalnP / AlGaInP / GaInP 660nm  
GaAs / AlGaAs / GalnP / AlGaAs / GaAs 703nm  
GaAs / GalnP / AlGaInP / GaInP 780nm  
GaAs / GalnP / AlGaInP / GaInP 785 nm  
GaAs Based Epi-oblea 800-1064nm LD infrarrojos
GaAs / GalnP / AlGaInP / GaInP 808nm LD infrarrojos
GaAs Based Epi-oblea 850nm Vertical Cavity Surface Emitting Laser (VCSEL)
RCLED
GaAs Based Epi-oblea <870nm Fotodetector
GaAs Based Epi-oblea 850-1100nm Vertical Cavity Surface Emitting Laser (VCSEL)
RCLED
GaAs / AlGaAs / GaInAs / AlGaAs / GaAs 905nm  
GaAs / AlGaAs / InGaAs / AlGaAs / GaAs 950nm  
GaAs Based Epi-oblea 980nm LD infrarrojos
InP Based Epi-oblea 1250-1600nm Avalancha foto-detector
GaAs Based Epi-oblea 1250-1600nm/>2.0um
(InGaAs absorptive layer)
Fotodetector
GaAs Based Epi-oblea 1250-1600nm/<1.4μm
(InGaAsP absorptive layer)
Fotodetector
InP Based Epi-oblea 1270-1630nm láser DFB
sustrato GaAsP / GaAs / GaAs 1300nm  
InP Based Epi-oblea 1310 láser FP
sustrato GaAsP / GaAs / GaAs 1550 láser FP
  1654nm  
InP Based Epi-oblea 1900nm láser FP
  2004nm  

 

About LD Epitaxy Wafer Applications & Market

The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.

The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.

Please see below detail specification of LD epitaxy wafer:

VCSEL Laser Wafer Chip

VCSEL Laser Epi Wafer

láser de diodo 703nm epi oblea

808nm láser de diodo epi oblea-1

láser de diodo de 780 nm epi oblea

láser de diodo de 650 nm epi oblea

láser de diodo 785 nm epi oblea

808nm laser diode epi wafers-2

láser de diodo de 850 nm epi oblea

láser de diodo de 905 nm epi oblea

940nm laser diode epi wafer

láser de diodo de 950 nm epi oblea

láser de diodo de 1550 nm epi oblea

1654nm láser de diodo epi oblea

2004nm láser de diodo epi oblea

GaAs Epitaxy with Thick Growth

GaAs based Epi Structure MOCVD Grown for Light Emitter

Narrow InGaAsP Quantum Well Grown on InP Wafer

InAs Quantum Dot Layers on InP Substrate

 

Chips individuales del emisor

Single-emisor LD viruta 755nm @ 8W

Single-emisor LD viruta 808nm @ 8W

Single-emisor LD viruta 808nm @ 10W

Single-emisor LD viruta 830nm @ 2W

Single-emisor LD viruta 880nm @ 8W

Single-Chip de emisor LD 900 nm + @ 10W

Single-Chip de emisor LD 900 nm + @ 15W

Single-emisor LD viruta 905nm @ 25W

Single-emisor LD viruta 3W @ 1470nm

PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:

LD Bare Bar

LD Bare Pub en 780 nm de 2,5 mm @ cavidad

LD Bare barra de 808nm 2 mm @ cavidad

LD Bare barra de 808nm de 1,5 mm @ cavidad

LD Bare barra de 880nm 2 mm @ cavidad

LD Bare barra de 940nm 2 mm @ cavidad

LD Bare barra de 3 mm 940nm @ cavidad

LD Bare barra de 940nm 4 mm @ cavidad

LD Bare barra de 940nm 2 mm @ cavidad

LD Bare barra de 976nm 4 mm @ cavidad

LD Bare barra de 1470nm 2 mm @ cavidad

LD Bare Pub en 1550 2mm @ cavidad