Figure 1. A full InGaN structure grown on InGaN-on-sapphire (InGaNOS) substrates can span the spectrum from blue to amber. (Source: Soitec)
Figure 1. A full InGaN structure grown on InGaN-on-sapphire (InGaNOS) substrates can span the spectrum from blue to amber. (Source: Soitec)
Weak ultraviolet light detection has important application prospects in fields such as fire warning, corona detection, and deep space detection. Avalanche photodiodes (APDs) have the advantages of high quantum efficiency, high gain, and ease of integration, making it more suitable for detecting ultraviolet light. In terms [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of LT-GaAs wafer, offers low-temperature grown gallium arsenide on GaAs substrate wafer. Our LT-GaAs epi layer has excellent properties, GaAs films with LT-GaAs layers were grown by molecular beam epitaxy (MBE) method at a low temperature substrate. The grown structures were [...]
PAM-XIAMEN can offer metallized diamond heat sink for solving the poor bonding force between diamond and the matrix and the early falls of the diamond due to high interface energy with most metals, ceramics, etc. A metallized diamond heat sink compound refers to plating metal on [...]
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns. Wafers 2 inches in diameter of monocrystalline silicon with an insulating oxide. 2 inches in diameter The silicon substrate orientation<100> resistivity>10Ωcm The insulating thermal oxidation film thickness 300nm Polishing: one-sided for microelectronics [...]
PAM XIAMEN offers Pyrolytic Boron Nitride. Performance PBN’s properties, its intrinsic purity, superior mechanical strength, and thermal stability make it a superb choice for high temperature furnace and electrical components; microwave and semiconductor components; and industry standardized crucibles for Gallium Arsenide Crystal production. Good [...]
Annealed silicon wafer can be provided with low defect density from PAM-XIAMEN. The purpose of using annealed wafer is to eliminate defects on the silicon wafer surface and the component manufacturing area of the surface layer, and has a strong ability to capture heavy [...]
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