oblea de InSb

Eléctricos y Dopaje Especificación
Tipo de conducción	de tipo n	de tipo n	de tipo n	de tipo n	p-tipo
dopante	sin dopar	Telurio	bajo el telurio	alta teluro	Genmanium
EPD cm-2	2″3″4″≤50				2″≤100
Mobility cm² V-1s-1	≥4*105	≥2.5*104	≥2.5*105	No Especificado	8000-4000
Carrier Concentration cm-3	5*1013-3*1014	（1-7）*1017	4*1014-2*1015	≥1*1018	5*1014-3*1015

 

 

1)2″(50.8mm)InSb Wafer
Orientation：(100)
Type/Dopant:N/undoped
Diameter:50.8mm
Thickness:300±25µm;500um
Nc:<2E14a/cm3
Polish:SSP

2)2″(50.8mm)InSb Wafer
Orientation：(100)
Type/Dopant:N/Te
Diameter:50.8mm
Carrier Concentration: 0.8 – 2.1 x 1015 cm-3
Thickness:450+/- 25 um;525±25µm
EPD < 200 cm-2
Polish:SSP

3)2″(50.8mm)InSb Substrate
Orientation：(111) + 0.5°
Thickness:450+/- 50 um
Type/Dopant:N/undoped
Carrier Concentration: < 5 x 10^14 cm-3
EPD < 5 x 103 cm-2
Surface roughness: < 15 A
Bow/Warp: < 30 um
Polish:SSP

4)2″(50.8mm)InSb Substrate
Orientation：(111) + 0.5°
Type/Dopant:P/Ge
Polish:SSP

5)2″(50.8mm)Indium Antimonide Wafer
Thickness:525±25µm,
Orientation：[111A]±0.5°
Type/Dopant:N/Te
Ro=(0.020-0.028)Ohmcm,
Nc=（4-8）E14cm-3/cc,
u=(4.05E5-4.33E5)cm²/Vs,
EPD<100/cm²,
Mobility:4E5cm2/Vs
One side edge;
In(A) Face: Chemically-mechanically final polished to 0.1µm (Final Polish),
Sb(B) Face: Chemically-mechanically final polished to <5µm (Lasermark),
NOTE: Nc and Mobility are at 77ºK.
Polish:SSP;DSP

6) 2 "(50,8 mm) GaSb
Thickness:525±25µm,
Orientation：[111B]±0.5°,
Type/Dopant:P/undoped;N/undoped
Polish:SSP;DSP

Condición de la superficie y otra especificación
Indium Antimonide wafer can be offered as wafers with as-cut, etched or polished finishes with wide range of doping concentration and thickness. The InSb wafer could be high quality epi-ready finishing.

Especificación de la orientación

Indium antimonide surface orientations are supplied to an accuracy of +/- 0.5 degrees using a triple axis X-Ray diffractometer system. Indium antimonide substrates can also be supplied with very precise misorientations in any direction from the growth plane. The available InSb wafer orientation could be (100),(111), (110) or other orientation or mis degree.

cONDICIONES DE ENVASADO

Polished wafer: individually sealed in two outer bags in inert atmosphere. Cassette shipments are available if required.
As-cut Wafer: Cassette shipment. (Glassine bag available on request).

Indium Antimonide Properties and Uses

The indium antimonide crystal structure is silver, brittle, and zinc blende structure. The indium antimonide lattice constant is 6.48 Å, and indium antimonide is a direct bandgap material with a narrow band gap of 0.18 eV. The indium antimonide conduction electron mobility is as high as 7800 cm2/V·s , which can be used to make infrared detectors, photomagnetic detectors and Hall devices.

Productos relativos:
oblea de InAs
oblea de InSb
oblea de InP
GaAs oblea
GaSb oblea
GaP oblea

InSb Epi Wafer

Differential Magnetoresistive Sensor

InSb Magnetoresistance (MR) Sensor

InSb Detector 

Uncooled Infrared Detector