X-ray diffraction analysis of LT-GaAs multilayer structures
Multilayer structures of low-temperature-grown GaAs(LT-GaAs) into which ultra-thin layers containing excess As are periodically introduced are grown by molecular beam epitaxy. The concentration of excess As in the ultra-thin layers is determined by the analysis of the intensity [...]
PAM-XIAMEN can supply SiC epitaxial wafers for MOSFET devices, additional information please read: https://www.powerwaywafer.com/sic-mosfet-structure.html. The epitaxial process of SiC inevitably forms various defects, which affect the performance and reliability of SiC power devices. Below, we specifically explore the impact of triangle defects on the [...]
2024-03-14pengarang meta
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates that we have in stock!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
DSP
Antimony
N+
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.5°
0.01 – 0.02 Ohmcm
150 ± 0.2 mm
300 ± 10 µm
30
10
30
6
DSP
Arsenic
N+
100
57,5 ± 2,5
110 ± 1
0.0 [...]
2019-02-25pengarang meta
PAM XIAMEN offers Undoped Silicon Wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Dopant
Ori
Res (Ohm-cm)
Thick (um)
Polish
Grade
Description
PAM3189
25.4mm
Undoped
<111>
>2000
280um
SSP
Test
Intrinsic FZ
PAM3190
25.4mm
Undoped
<100>
>5000
73.5um
DSP
Prime
FZ, Float Zone
PAM3191
50.8mm
Undoped
<100>
>10000
280um
DSP
Prime
FZ, Intrinsic item
PAM3192
50.8mm
Undoped
<100>
>10000
500um
SSP
Test
Float Zone, Undoped
PAM3193
76.2mm
Undoped
<100>
>5000 Ohm-cm
350um
DSP
MECH
NON-REFUNDABLE, POOR QUALITY. Sold “As-Is”; wafers are covered in streaks, residue, and particles.
PAM3194
100mm
Undoped
<100>
>20,000
500um
SSP
Prime
Intrinsic, Secondary flat SEMI, TTV<10 [...]
2019-02-14pengarang meta
Semi-insulating indium phosphide (formula: InP) wafer at prime grade for sale is dark gray crystal with a bandwidth (Eg=1.35 eV) at room temperature, a dissociation pressure of 2.75MPa at a melting point, an electron mobility of 4600cm2/(V·s), and a hole mobility of 150cm2/(V·s). PAM-XIAMEN [...]
2021-08-06pengarang meta
PAM XIAMEN is comparable to the UK IQE to build Asian VCSEL epitaxial core supply chain
Xiamen Powerway focuses on high-end compound semiconductor epitaxial R&D and manufacturing.
In 2018, the 4-inch and 6-inch VCSELs were mass-produced and entered the mainstream chip manufacturers in Taiwan. Utilizing state-of-the-art [...]
2019-01-21pengarang meta
