Multilayer structures of cobalt and silicon have been deposited as an ohmic contact on n-type 4H-SiC substrates in order to obtain lower contact resistance and higher thermal stability. The metal structures were prepared by using electron beam evaporation on top of the silicon face [...]
2019-08-06Meta-Autor
PAM-XIAMEN offers 4H semi-insulating SiC wafer with vanadium doped or undoped high-purity, semi-insulating, size from 2” to 6”. The transmission rate of 4H semi-insulating silicon carbide with thickness of 353 um, double sides polished is shown as the figure:
Transmission Rate of 4H Semi-insulating SiC Wafer
We also [...]
2018-08-07Meta-Autor
Properties of InGaN blue laser diodes grown on bulk GaN substrates
High-pressure growth from solution is at present the only method able to provide true bulk GaN monocrystals. In this paper, we would like to demonstrate that in spite of their small, centimeter range size, [...]
In this study, a nano-columnar low-temperature (LT) GaN buffer was used to reduce the wafer bowing of a GaN layer grown on a sapphire substrate. A significant reduction in the extent of wafer bowing was observed for the GaN layer for the preserved nano-columnar LT GaN [...]
Gallium nitride semiconductors
GaN is a compound semiconductor on steroids! if you could make a 10 Watt part on GaAs at a particular frequency, you can probably make a 100 watt part on GaN right now.
Gallium nitride is the future of microwave power amps, GaAs has exceeded its [...]
PAM XIAMEN offers KCl Crystal.
KCl (100), 10x10x 2.2-2.5 mm 1 Side polished
Crystal: KCl Crystal
Orientation: <100> +/-2.5 o
Size: 10x10x 2.2-2.5 mm
Polished: one side polished
Purity: 99.9%
Surface finish (RMS or Ra) : < 100A
Package: 1000 class clean plastic bag sealed
Note: KCl [...]
2019-05-07Meta-Autor
