M Flugzeug U-GaN freistehendes GaN-Substrat

M Flugzeug U-GaN freistehendes GaN-Substrat

PAM-XIAMEN bietet freistehendes M-Flugzeug-U-GaN-GaN-Substrat an

Artikel PAM-FS-GAN MU
Dimension 5 x 10 mm2 or 5 x 20 mm2
Dicke 380 +/- 50um
Orientierung M-Ebene (1-100) vom Winkel zur A-Achse 0 ± 0,5 °

M-Ebene (1-100) vom Winkel zur C-Achse -1 ± 0,2 °
Conduction Typ N-type / Undoped
Spezifischer Widerstand (300 K) <0,1 Ω · cm
TTV ≤ 10 um
BOGEN BOGEN ≤ 10 µm
Oberflächenrauheit Vorderseite: Ra <0,2 nm, epi-ready;

Rückseite: Fein geschliffen oder poliert.
Versetzungsdichte ≤5 x 10 6cm-2
Makrofehlerdichte 0 cm & supmin; ²
Nutzfläche > 90% (Kantenausschluss)
Paket jeweils in einem einzelnen Waferbehälter unter Stickstoffatmosphäre, verpackt in einem Reinraum der Klasse 100

 

Für weitere Informationen kontaktieren Sie uns bitte per E-Mail untervictorchan@powerwaywafer.comundpowerwaymaterial@gmail.com

2020-08-17

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