Oblea EPI de silicio de 6″

Oblea EPI de silicio de 6″

PAM XIAMEN ofrece obleas EPI de silicio de 6″.

Sustrato PAI Comentario
Tamaño Escribe res
Ωcm		 Navegar. Grueso
micras		 Escribe res
Ωcm
6″Øx675μm n-Si:P[100] 0.001-0.002 P/EOx 3,2 ±0,2 n-Si:P 0.32-0.46 n+/n++

Para obtener más información, por favor visite nuestro sitio web:https://www.powerwaywafer.com,
enviar correo electrónico a sales@powerwaywafer.com y powerwaymaterial@gmail.com

Fundada en 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) es un fabricante líder de material semiconductor en China. PAM-XIAMEN desarrolla tecnologías avanzadas de epitaxia y crecimiento de cristales, procesos de fabricación, sustratos de ingeniería y dispositivos semiconductores. Las tecnologías permiten un mayor rendimiento y un menor costo de fabricación de obleas de semiconductores.

PAM-XIAMEN desarrolla tecnologías avanzadas de crecimiento de cristales y epitaxia, que van desde la oblea de germanio de primera generación, el arseniuro de galio de segunda generación con crecimiento de sustrato y epitaxia en materiales semiconductores de tipo n dopados con silicio III-V basados ​​en Ga, Al, In, As y P crecido por MBE o MOCVD, a la tercera generación: carburo de silicio y nitruro de galio para aplicaciones de dispositivos de energía y LED.

2019-03-08

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