Ingot Monokristalin Germanium (Ge) disediakan dengan jenis P oleh PAM-XIAMEN. Kristal Germanium does not contain large-angle grain boundaries or twin crystals. It has a diamond-shaped crystal structure and is an important semiconductor material. According different applications, single crystal germanium ingot can be divided into solar-grade germanium single crystal, infrared-grade germanium single crystal and detector-grade germanium single crystal. Among them, infrared-grade Ge single crystal is used to prepare basic materials for infrared windows, infrared lenses and other optical components; Ge ingot for semiconductor devices is used to make substrate material for various transistors and solar cells; Detector-grade single crystal Ge is used to prepare high-resolution gamma radiation detector. Take the following specification for example:
1. Spesifikasi Ingot Germanium Tunggal
No.1 Germanium Cubic Crystal
PAM181102-GE
| Perkara | Crystalium Cubic Germanium |
| Jenis kelakuan | SCP |
| Dopant | Ge-Ga |
| Negara | 150 mm |
| diameter | 100.0 ± 0.4 mm |
| orientasi | (100) 6 ° ke arah <111> + 5 ° |
| Sudut Orientasi | 135 ° |
| Flat Utama | (100) + 2 ° |
| Panjang PFlat | 32.5 + 2.5 mm |
| Flat menengah | Tiada |
| CC | 1E18 - 2.5 E18 |
| EPD | Ave <500 / cm3 |
| kerintangan | 0.01-0.04 Ohm * cm |
No.2 Germanium Ingot Optical Grade
PAM200408-GE
Germanium ingot D26-0.3mm*L100mm
Germanium ingot D30-0.3mm*L100mm
Type: N-type
Orientation: <111>
Resistivity: 5-40 Ohm*cm
Absorption coefficient: 0.03cm/max @ λ= 10.6um
Refractive index heterogeneity: 5.0*10-9 max @ λ=10.6 um
2. Piawaian Industri untuk Pertumbuhan Kristal Germanium
Permukaan kristal tunggal germanium selepas sferonisasi mestilah bebas dari retakan, lubang, calar, dan permukaan silinder tidak boleh mempunyai tempat yang tidak terkawal.
Jenis kekonduksian jenis germanium jongkong harus memenuhi kehendak Jadual 1:
Jadual 1 Kekonduksian Jenis Ingot Germanium Monokristalin
| Jenis Kekonduksian | Dopant | Ketahanan p (23 ℃ ± 0.5 ℃) ohm-cm |
| Jenis-P | Ga | 0.001 ~ 45.0 |
| Dalam | 0.001 ~ 45.0 | |
| Au + Ga (ln) | 0.5 ～ 5.0 | |
| N-jenis | Sb | 0.001 ~ 45.0 |
| Undoped | 35.0 ~ 50.0 |
Variasi ketahanan radial dari kristal tunggal germanium harus memenuhi kehendak Jadual 2:
Jadual 2 Variasi Ketahanan Radial Germanium Crystal
| Diameter (mm) | Variasi Ketahanan Radial (Nilai Mutlak) |
| 10≤d≤50 | ≤10% |
| 50≤d≤100 | ≤15% |
| 100≤d≤150 | ≤20% |
| 150≤d≤200 | ≤25% |
| 200≤d≤300 | ≤30% |
| Nota: Diameter merujuk kepada ukuran kristal tunggal germanium yang tidak dibulatkan. | |
Ketumpatan dislokasi jongkong Ge untuk tujuan yang berbeza harus memenuhi kehendak Jadual 3:
Jadual 3 Ketumpatan Dislokasi Germanium
| Permohonan | Kepadatan Dislokasi Pcs / cm2 |
| Peranti Semikonduktor | ≤1 000 |
| Komponen Laser | ≤5 000 |
| Komponen Optik Inframerah | ≤100000 |
Mark: Keperluan untuk parameter kristal germanium tulen yang dihasilkan akan lebih tinggi daripada standard industri.
3. FAQ for Germanium Ingot
Q: What is the difference of germanium ingot between electronic grade and optical grade?
A: Optical grade germanium single crystal generally is lower requirement to electronic grade, they require transmission rate and different polished condition and orientation, but we often use low electronic grade for optical grade.
Untuk maklumat lebih lanjut, sila hubungi kami melalui e-mel di victorchan@powerwaywafer.com dan powerwaymaterial@gmail.com.