You can buy P-type or N-type silicon ingot crystal from PAM-XIAMEN, which is a silicon ingot manufacturing company. To get monocrystalline silicon ingot, the silicon material is melted in a single crystal furnace and then undergoes a series of processes to grow into single [...]
2019-11-27meta-autor
Ge Wafer Substrate-Germanium
No.
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
(mm)
(μm)
Ω·cm
Orientation
/cm2
1-100
Ge
(100)
50.8
500±25
SSP
0.0138-0.02
P/Ga
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500
SSP
≥30
N/undoped
N/A
N/A
<5A
1-100
Ge
(100)
50.8
500
SSP
58.4-63.4
N/undoped
N/A
N/A
N/A
1-100
Ge
(100)
50.8
500
SSP
0.1-1
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
50.8
500
SSP
0.1-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
50.8
1000
DSP
>30
N/A
(110)
N/A
N/A
1-100
Ge
(100)
50.8
2000
SSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
4000
SSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(111)/(110)
50.8
200000
N/A
5-20
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
400
SSP
<0.4
N/A
N/A
N/A
N/A
1-100
Ge
(100)/(111)
50.8
4000±10
DSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
350
SSP
1-10
P/Ga
(110)
≤5000
N/A
PAMP20295
Ge
(100)
50.8
500±25
SSP
2-10
P/Ga
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500±25
SSP
0.3-3
N/Sb
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500±25
SSP
0.3-3
P/Ga
(110)
≤5000
N/A
1-100
Ge
(111)
60
1000
As cut
>30
N/A
(110)
<3000
N/A
1-100
Ge
(100)
100
N/A
SSP
<0.019
P/Ga
(110)
<500
N/A
1-100
Ge
(100)
100
1000±25
SSP
≥30
N/undoped
N/A
N/A
N/A
1-100
Ge
(100) off 6°or off 9°
100
500
SSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
<0.01
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
<0.01
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
≥35
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
≥35
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
0.1-0.05
P/Ga
N/A
N/A
<5A
1-100
Ge
(100)
100
500
DSP
0.1-0.05
P/Ga
N/A
N/A
<5A
1-100
Ge
(100)6°off (111)
100
185±15
DSP
0.01-0.05
N/A
(110)
≤5000
<5A
1-100
Ge
(100)6°off (110)
100
525±25
SSP
0.01-0.04
N/A
N/A
N/A
N/A
1-100
Ge
(100)
100
N/A
N/A
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
100
1000±15
SSP
≥30
N/A
(110)
≤5000
N/A
1-100
Ge
(100)
100
750±25
SSP
≥30
N/A
(110)
≤5000
N/A
1-100
Ge
(100)
100
500±25
SSP
10-30
N/A
N/A
N/A
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
P/Ga
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
P/Ga
N/A
<4000
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
N/Sb
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
N/Sb
N/A
<4000
N/A
1-100
Ge
(100)/(111)
100
190
DSP
0.05-0.1
P/Ga
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
190
DSP
0.05-0.1
P/Ga
N/A
<4000
N/A
1-100
Ge
(111)
100
500±25
SSP
<0.4
N/Sb
N/A
N/A
N/A
1-100
Ge
(100)6°off-cut toward(111)A
100
175±25
SSP
0.003-0.009
P/Ga
(0-1-1) (0-11)
<100
N/A
PAM210802
Ge
(100)
100
175
DSP
<0.02
P
N/A
N/A
N/A
1-100
Ge
(310)±0.1°
100
200±15
DSP
>20
N/A
N/A
N/A
N/A
1-100
Ge
(111)
150
600-700
N/A
>30
N/A
(110)
N/A
N/A
Germanium wafer list here is for your reference, if you need price detail, please contact our sales team. As a Ge wafer supplier, we also offer bulk Ge wafer with sepecial [...]
Silicon Wafer
Si wafer Substrate -Silicon
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
Si
N/A
25.4
280
SSP
1-100
P/b
N/A
N/A
N/A
1-100
Si
N/A
25.4
280
SSP
1-100
P/b
(1-200)E16
N/A
N/A
1-100
Si
(100)
25.4
525
N/A
<0.005
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
525±25
SSP
<0.005
N/A
N/A
N/A
N/A
1-100
Si with Oxide layer
(100)
25.4
525±25
SSP
<0.005
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
350-500
SSP
1~10
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
Si
(100)
50.4
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
p-Si with 90 nm SiO2
(100)
50.4
500±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
n-Si with 90 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
p-Si with 285 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
n-Si with 285 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
Si with electrodes
(100)
50.8
400
N/A
<0.05
N/p
1E14-1E15
N/A
N/A
1-100
Si
(100)
50.8
275
SSP
1~10
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
275±25
SSP
1~10
N/p
N/A
N/A
N/A
1-100
Si
(111)
50.8
350±15
SSP
>10000
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
430±15
SSP
5000-8000
N/A
N/A
N/A
N/A
1-100
Si
(111)
50.8
410±15
SSP
1~20
N/A
N/A
N/A
N/A
1-100
Si
(111)
50.8
400-500
SSP
>5000
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
525±25
SSP
1~50
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
500±25
SSP
1~10
N P
N/A
N/A
N/A
1-100
Si
(100)
50.8
500±25
P/P
>700
P/
N/A
N/A
N/A
1-100
Si
(100)
76.2
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
p-Si with 90 nm SiO2
(100)
76.2
500±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
n-Si with 90 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
p-Si with 285 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
n-Si with 285 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
Si
(100)
100
625
SSP
>10000
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
525
SSP
N/A
N/P
N/A
N/A
N/A
1-100
Si
(100)
100
320
SSP
>2500ohm·cm
P/b
N/A
N/A
N/A
1-100
Si
(100)
100
N/A
SSP
10~30
N/p
N/A
N/A
N/A
1-100
Si
(100)
100
505±25
SSP
0.005-0.20
N/P-doped
N/A
N/A
N/A
1-100
Si
(100)
100
381
SSP
0.005-0.20
N/P-doped
N/A
N/A
N/A
1-100
Si
(100)
100
525
DSP
1-100
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
525
DSP
1-100
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
625±25
SSP
0.001-0.004
N/A
N/A
N/A
N/A
1-100
Si [...]
Silicon Wafer with thermal oxidation or Wet and Dry Thermal Oxide (SiO2) are in Stock,oxidation film(SiO2)can be custom
In Stock, But Not Limited To The Following.
Wafer No.c
Wafer Size
Polished /oxidation sides
Type/Orientation
Wafer Thickness(um)
oxidation thickness
Resistivity(Ohm.cm)
Quantity(pcs)
PAM-XIAMEN-WAFER-#O01
1″
SSP, both oxidation
P100
525±10
300nm
<0.005
290
PAM-XIAMEN-WAFER-#O02
2″
SSP, both oxidation
P100
500±20
3um
1-10
24
PAM-XIAMEN-WAFER-#O03
2″
DSP, both oxidation
N100
285±15
1um
1-10
50
PAM-XIAMEN-WAFER-#O04
2″
SSP, both oxidation
P100
430±10
300nm
<0.005
5
PAM-XIAMEN-WAFER-#O05
3″
SSP, both oxidation
100
400±10
2um
>10000
20
PAM-XIAMEN-WAFER-#O06
4″
SSP, both oxidation
100
400±10
2um
>10000
25
PAM-XIAMEN-WAFER-#O07
4″
SSP, both [...]
2019-11-27meta-autor
Sustratos para III-V nitruro Film Deposition Crystal Structure MP Densidad del enrejado Mis-fósforo para GaN Tech térmica Crecimiento de expansión. . Y tamaño Max tamaño del sustrato estándar (mm) oC g / cm3 (10-6 / k) SiC (6H como ejemplo) Hexagonal ~ 2,700 3,21 3,5% Atori. 10,3 CVD Ø2 "x 0,3, O3" x0.3 a = 3,073 Å 20x20x0.3,15x15x0.3 c = 15,117 Å Ø3“ 10x10x0.3,5x5x0.3 subl. 1 lado epi Al2O3 pulido Hexagonal 2,030 3,97 14% Atori. 7.5 CZ Ø50 x 0,33 a = 4,758 Å Ø25 x 0,50 c = 12,99 Å Ø2” 10x10x0.5 1 o 2 lados epi pulido LiAlO2 Tetragonal 1,900 ~ 2,62 1,4% Atori. / CZ 10x10x0.5 a = 5,17 Å Ø20 [...]
2018-07-10meta-autor
Superconductor Substrates
Crystal
Structure
M.P.
Density
Thermal Expansion
Dielectric constant
Growth Tech. & max. size
standard 1or 2 sides epi polished wafer
oC
g/ cm3
LSAT
Cubic
1840
6.74
10
22
CZ
20x20x0.5mm
(LaAlO3)0.3 -(Sr2AlTaO8)0.7
a=3.868 Å
Ø35mm
10x10x0.5mm
LaAlO3
Rhombo.
2100
6.51
9.2
24.5
CZ
Ø3″x0.5mm
a=3.790 Å
Ø3″
Ø2″x0.5mm
c=13.11 Å
Ø1″x0.5mm
10x10x0.5mm
MgO
Cubic
2852
3.58
12.8
9.8
Flux
Ø2″x0.5mm
a=4.21 Å
Ø2″
10x10x0.5mm
NdGaO3
Orthor.
1600
7.57
7.8
25
CZ
Ø2″x0.5mm
a=5.43 Å
Ø2″
10x10x0.5mm
b=5.50 Å
c=7.71 Å
SrTiO3
Cubic
2080
5.12
10.4
300
vernuil
10x10x0.5mm
a=3.90 Å
Ø30mm
SrLaAlO4
Tetrag.
1650
16.8
CZ
10x10x0.5mm
a=3.756 Å
Ø20mm
c=12.63 Å
YAlO3
Orthor.
1870
4.88
2 ~ 10
16`20
CZ
10x10x0.5mm
a=5.176 Å b=5.307 Å
Ø30mm
c=7.355 Å
YSZ
Cubic
~2500
5.8
10.3
27
Flux
Ø2″x0.5mm
a=5.125 Å
Ø2″
10x10x0.5m
2018-07-10meta-autor
