PAM-XIAMEN offers (20-2-1) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(20-2-1)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email [...]
2020-09-02meta-author
PAM XIAMEN offers Quartz Frit.
1” Diameter Porous Quartz Frits with Optional Porosity, 1 pc
Specifications
Diameter – mm
25
Thickness – mm
4
Porosity
15~40um or 4~15um (Please select the pore size in the optional bar)
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com [...]
2019-04-18meta-author
PAM XIAMEN offers Polished silicon slab.
Size: 90X200mm
Thickness: 9±1mm
2 polished face 90 x 200mm
Flatness <1um
TTV <5um
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-08-22meta-author
PAM XIAMEN offers Tatalum Metal Substrate & Foil ( Polycrystalline ).
Symbol Ta
Atomic Number 73
Atomic Weight: 180.95
Density: 16.69 g/cm3
Melting Point: 2996 °C
Boiling Point: 5425+/-100 °C
Ta – Tantalum Polycrystalline Metallic Foil: 0.05mm thick x 200mm Width x 400 mm Length
Ta [...]
2019-05-10meta-author
PAM XIAMEN offers SiO2 Silica Quartz Single Crystal.
Major capability parameter
Growth method
hydro-thermal method
Crystal Structure
M6
Unit cell constant
a=4.914Å c=5.405 Å
Melt point(℃)
1610℃
Density
2.684g/cm3
Hardness
7(mohs)
Thermal conductivity
0.0033cal/cm℃
Planned constant
1200uv/℃(300℃)
Index of refraction
1.544
Thermal expansion
α11:13.71×106 / ℃ α33:7.48×106 /℃
Frequency constant
1661(kHz/mm)
Crystal orientation
Y、X or Z,30º~42.75 º ±5
Polishing
Single or double Ra<10Å
Thickness
0.5mm±0.05mm TTV<5um
Diameter
Φ2″(50.8mm)、Φ3″(76.2mm)、Φ4″(100mm)±0.2mm
main positioning:22±1.5mm (Φ3″) 32±3.0 (Φ4″)
Secondary positioning :10mm±1.5mm
For more information, please [...]
2019-03-15meta-author
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-2
6″ Si wafer, Diameter 150mm, FZ Gas Dope, DSP, N(111), resistivity 5000-10,000Ωcm
PARAMETER
SPECIFICATION
GENERAL CHARACTERISTICS
1
Growth Method
FZ Gas Dope
2
Crystal Orientation
(111)
3
Conductivity Type
n
4
Dopant
Phosphorus.
5
Nominal Edge Exclusion
6 mm
ELECTRICAL CHARACTERISTICS
6
Resistivity
5000 – 10,000 Wcm
7
Life Time
>1500 µsec
CHEMICAL CHARACTERISTICS
8
Oxygen Concentrations
< 2xE16 at/cm3
9
Carbon Concentrations
< 2xE16 at/cm3
WAFER PREPARATION CHARACTERISTICS
10
Front Surface Condition
Polished, DSP
11
Edge [...]
2020-04-17meta-author