Lithium niobate (LiNbO3) is a compound of niobium, lithium, and oxygen. Its single crystals are an important material for optical waveguides, mobile phones, piezoelectric sensors, optical modulators and various other linear and non-linear optical applications.Single crystals of lithium niobate can be grown using the Czochralski process. A Z-cut, single crystal Lithium Niobate wafer. After a crystal is grown, it is sliced into wafers of different orientation. Common orientations are Z-cut, X-cut, Y-cut, and cuts with rotated angles of the previous axis.
Powerway Wafer Co.,Limited completes ion implantation and splitting+ grinding process platform and offers 3-6 inch wafer implantation, bonding, peeling.
Regular Products | Structure | Remark |
LNOI (Top layer thickness 50-1000nm) |
Single-Crystal LN Thin Film SiO2(2μm) LN Substrate(500μm) |
Large refractive index difference Application: Electro-optic modulators, Optical wave-guides, Resonators, SAW devices, FRAM memory devices |
LN on Si with SiO2 (Top layer thickness 50-1000nm) |
Single-Crystal LN Thin Film SiO2 Si Substrate(400 or 500μm) |
Large refractive index difference Integration with silicon Application: Electro-optic modulators, Optical wave-guides, Resonators, SAW devices, FRAM memory devices |
LT on Si (Top layer thickness 5-50μm) |
Single-Crystal LT Thin Film Si Substrate |
Direct bonding Intergration with silicon Application: SAW devices |
LN on Si (Top layer thickness 5-50μm) |
Single-Crystal LN Thin Film Si Substrate |
Direct bonding Intergration with silicon Application: SAW devices |
LT on SiO2/Si (Top layer thickness 50-1000nm) |
Single-Crystal LT Thin Film SiO2 Si Substrate |
Increased pyroelectric properties Enhanced sensitivity of pyroelectric devices Application: Pyroelectric sensors, SAW devices |
MgO-doped LN (Top layer thickness 50-1000nm) |
MgO-doped LN Thin Film SiO2 LN Substrate |
Resistant to optical demage Ability to endure high light intensity Inclination to thin film polarization Application: Electro-optic modulators, Terahertz generation |
LN with Electrode (Top layer thickness 50-1000nm) |
LN Thin Film SiO2 Elctrode(100nm) LN Substrate |
Application: Electro-optic modulators Optical wave-guides Resonators |
LN Thin Film Elctrode SiO2 LN Substrate |
Application: SAW devices FARM memory devices |
Specification of LNOI Series Products | |
Top LN Functional Layer | |
Diameter | 3″(76.2mm)/4″(100mm) |
Thickness | 50~1000nm |
Reflection index | no≈±2.2860 |
ne≈±2.2024 | |
Edge Exclusion | 5mm |
Orientation | Z, X, Y, Y-128°etc. |
Voids | <10 |
TTV | ±5% |
Isolation Layer | |
Preparation Method | PECVD, Thermal Oxide |
Thickness | 1000~4000nm |
Reflection Index | 1.46~1.48 |
TTV | ±5% |
Optional Substrate | |
Si, LN, Quartz, Glass | |
Optional Electrode Layer (above or under SiO2 isolation layer) | |
Material | Pt/Au |
Thickness range | 100~400nm |
Please see below detail specs:
Piezoelectric LiNbO3 Wafer
1. General LN Crystal Wafer Requirements:piezocrystal
Orientation:To be as requested ±0.20 ,unless specified.
Diameter:(1)Φ76.2±0.5mm (2) Φ100.0±0.5mm
Thickness:(1)0.50±0.05mm (2) 0.35±0.03mm
Bow:≤ 40um
Taper:≤ 20um
Identification flat position and length is to be as follows
Primary Flat Location:Must be within ±0.20 , unless specified.
Primary Flat Length: (1)22±2mm (2)32±2mm unless specified.
Secondary Flat Length:(1)10±3mm (2)12±3mm unless specified.
Surface Polish Quality:
Surface Polish :Mirror polished 10—15A
Backside Polish:Lapped with GC240 or GC1000 diamond sand and etched.
Edge Chips:Edge rounding
Curie Temp. :1142±30C
2. Individual wafer Orientation "Special"Requirement :
1)Orientation :127.860Y±0.20
Primary flat direction:X-axis.
Secondary Flat:none
640Y-cut
2)Orientation:640Y±0.20
Primary flat direction:X-axis
econdary Flat:1800 clockwise from the primary flat if required.
3)YZ-cut
Orientation:Y-axis±0.20
Primary flat direction:Z-axis
Secondary Flat:X-axis
3.Optical LiNbO3 wafer
Crystal Orientation: X, Z
Orientation Fluctuation: ±0.30, two ends of crystal shall be polished.
Diameter: 76.2±0.5 mm
Length: 50~80 mm.
Curie Temp.1142±20C
Orientation of First Reference Flat: As required ±0.20.
Length of First Reference Flat: 22±2 mm inspection polished.
Second Reference Flat: Available if required, the length shall be 10±3mm
Appearance: Free of crack, pore, inclusion.
4.Optical characteristics:
Transparent range:370—5000nm
Refractive index:(633nm)no=2.286 ne=2.200
Refractive gradient(633nm)≤5×10-5/cm
Transmittivity(633nm)≥68%
Briefringence index: △n= no – ne≈0.08
Piezoelectronic Quartz Wafer
5.General Quartz Wafer Requirements:
Diameter:(1)Φ76.2±0.5mm
Thickness:(1)0.35±0.05mm (2) 0.40±0.05mm (3)0.50±0.05mm
Bow:≤ 40um
Taper:≤ 20um
Orientation:To be as requested ±0.20 ,unless specified.
Identification flat position and length is to be as follows:
Primary Flat Location:Must be within ±0.20 , unless specified.
Primary Flat Length:22±2mm unless specified.
Secondary Flat Length:10±3mm unless specified.
Surface Polish Quality:
Surface Polish :Mirror Polished 10—15A
Backside Polish:Lapped with GC600 or GC1200 diamond sand and etched.
Edge Chips:Edge rounding
Seed Location:To be within the center 6.5mm of the wafer or not required.
Q Factor:≥ 2 million min.
6.Individual wafer Orientation "Special"Requirement:
1)360Y-cu
Orientation:360Y±0.20
Primary flat direction:X-axis.
Secondary Flat:Two flat,90 and 270 from theprimary flat if required.
340Y-cut
2)Orientation:340Y±0.20
Primary flat direction:X-axis
Secondary Flat:900 clockwise from the primary flat if required.
42.750Ycut
3)Orientation:42.750Y±0.20
Primary flat direction:X-axis
7.lithium tantalate
1)General LT Crystal Wafer Requirements:
Diameter: (1)Φ76.2±0.5mm (2) Φ100.0±0.5mm
Thickness: (1)0.50±0.03mm (2) 0.40±0.03mm
Bow:≤ 40um
Taper:≤ 20um
Orientation:To be as requested ±0.20 ,unless specified.
Identification flat position and length is to be as follows:
Primary Flat Location:Must be within ±0.20 , unless specified.
Primary Flat Length: (1)22±2mm (2)32±2mm unless specified.
Secondary Flat Length: (1)10±3mm (2)12±3mm unless specified.
8.Surface Polish Quality:
Surface Polish :Mirror Polished 10—15A
Backside Polish:Lapped with GC1200 diamond sand and etched.
Edge Chips:Edge rounding
Curie Temp. :605±30C
Individual wafer Orientation "Special"Requirement :
1)360Y-cut
Orientation:360Y±0.20
Primary flat direction:X-axis.
Secondary Flat:none
2)420Y-cut
Orientation:420Y±0.20
Primary flat direction:X-axis.
Secondary Flat:1800 clockwise from the primary flat if required.
X-1120Ycut
Orientation:X-axis±0.20
Primary flat direction:+1120Y
9.Piezoelectronic Quartz Wafer
General Quartz Wafer Requirements:
Diameter:(1)Φ76.2±0.5mm
Thickness:(1)0.35±0.05mm (2) 0.40±0.05mm (3)0.50±0.05mm
Bow:≤ 40um
Taper:≤ 20um
Orientation:To be as requested ±0.20 ,unless specified.
Identification flat position and length is to be as follows:
Primary Flat Location:Must be within ±0.20 , unless specified.
Primary Flat Length:22±2mm unless specified.
Secondary Flat Length:10±3mm unless specified.
10.Surface Polish Quality:
Surface Polish :Mirror Polished 10—15A
Backside Polish:Lapped with GC600 or GC1200 diamond sand and etched.
Edge Chips:Edge rounding
Seed Location:To be within the center 6.5mm of the wafer or not required.
Q Factor:≥ 2 million min.
Individual wafer Orientation "Special"Requirement:
1)360Y-cu
Orientation:360Y±0.20
Primary flat direction:X-axis.
Secondary Flat:Two flat,90 and 270 from theprimary flat if required.
2)340Y-cut
Orientation:340Y±0.20
Primary flat direction:X-axis
Secondary Flat:900 clockwise from the primary flat if required.
3)42.750Ycut
Orientation:42.750Y±0.20
Primary flat direction:X-axis
4)Others available if required
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keywords:
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lithium tantalate wafer
lithium niobate layer
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lithium tantalate layer
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LT on SiO2/Si
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LN Substrate
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4 "film sottile LiNbO3 on Silicon Wafer
3″LiNbO3 single crystal thin film
If you need more information about lithium niobate,
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send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com.