Materiale in germanio a cristallo singolo da 8 pollici

Single crystal germanium (Ge) material is an important hard and brittle infrared optical material, belonging to indirect transition semiconductor with high hole mobility and electron mobility. It is widely used in aerospace, high-frequency ultra-high frequency electronics, optical fiber communication, infrared optics, solar cells and other fields. PAM-XIAMEN can offer [...]

Film sottile di GaSb su GaAs

At present, most InAs/GaSb ll superlattices are grown on lattice matched GaSb substrates. However, due to the high price of GaSb substrate, the absence of semi-insulating substrate, and the complexity of the process, seeking to grow GaSb bulk materials on new substrates, such as GaAs substrate, has become a [...]

Wafer laser FP (Fabry-Perot).

Fabry-Perot laser (FP-LD) is the most common semiconductor laser. At present, the fabrication technology of FP-LD used in optical fiber communication has been quite mature, and the structure of double heterojunction multiple quantum wells active layer, carrier and light limited structure is widely used. PAM-XIAMEN, one of leading epitaxy [...]

Crescita epitassiale dell'eterostruttura MESFET GaAs

PAM-XIAMEN provides GaAs epiwafer for MESFET devices, which is one FET epitaxial structure with modulated doping. Detailed epitaxial growth heterostructure is listed below for your reference. The electron migration rate of GaAs is 5.7 times higher than that of silicon, which is very suitable for high-frequency circuits. The electrical [...]

Wafer epitassiale in silicio drogato con boro tipo P

At present, P-P+ (boron doped) silicon epitaxial wafers are widely used in the manufacture of large-scale integrated circuits and discrete devices. The requirements for the thickness of P-P+ silicon epitaxial wafers vary with the device type. For making high-speed digital circuits, only about 0.5μm of epilayer is needed. For [...]

Substrato semiconduttore in fosfuro di indio tipo P

Indium phosphide (InP) is one of the III-V compound semiconductors. It is a new generation of electronic functional materials after silicon and gallium arsenide. Indium phosphide semiconductor material has many excellent properties: direct transition band structure, high photoelectric conversion efficiency, high electron mobility, easy to make semi insulating materials, [...]

Wafer a diodi laser GaN da 405 nm

Group III nitride materials are a kind of direct band gap materials, which have the advantages of wide band gap, strong chemical stability, high breakdown electric field and high thermal conductivity. They have broad application prospects in the fields of efficient light-emitting devices and power electronic devices. Therein, by [...]

Servizi di fabbricazione GaN per dispositivi HEMT

PAM-XIAMEN supplies GaN HEMT epitaxial wafers and GaN fabrication services. Our GaN fabrication services supplied include front-end process and back-end process. More details about GaN fabrication process for HEMTs please see below: 1. OEM Service – Si-based GaN Epitaxial Wafers for Power and RF Electronic Devices Our GaN fab can epitaxy [...]

Servizi di fonderia GaN per la fabbricazione di LED

PAM-XIAMEN can offer LED epitaxy wafers and is able to offer GaN foundry services & supplies for LEDs. The GaN foundry services include OEM growth service, COW process and various test services. Specifically as follows: 1. OEM Service – Customized AlGaN-based Thin Film Epi Structure We supply 2, 4 inch DUV-LED [...]

Wafer laser ad alta potenza da 1060 nm

InGaAs quantum well (QW), as a commonly used two-dimensional material in near-infrared band, has important applications in semiconductor lasers, solar cells and other devices. In the field of semiconductor lasers, InGaAs/GaAs quantum well expands the luminous wavelength of GaAs (0.85~1.1 μm) and is widely used in various optoelectronic devices [...]