PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
8
SSP
Arsenic
N+
100
0,0 ± 0,0
010 ± 1
0.0 ± 0.4°
0.002 – 0.003 Ohmcm
200 ± 0.1 mm
725 ± 15 µm
6
60
8
SSP
Boron
P
100
0,0 ± 0,0
011 ± 1
3.5 – 7.0 Ohmcm
200 ± [...]
2019-02-25мета-автор
PAM XIAMEN offers BGO, Bismuth germanate, Bi4Ge3O12 Scintillation Crystals.
SPECIFICATIONS:
Crystal structure: Cubic
Lattice Parameter: a=10.518 Å
Density: 7.13(g/cm3)
Hardness: 5(mohs)
Melt point: 1050℃
Index of refraction: 2.15
Radiation length: 1.1cm
Peak of fluorescence spectra : 480nm
Decay time: 300ns
Relative light output(%): 10-14 Nal(Tl)
Energy resolution: 20% @511KV
Crystal orientation: <001>、<110>
Size(mm):Special size and orientation are available upon request
Polishing: Single or double
Packaging: Clean room
MAIN APPLICATIONS
Positron emission tomography (PET)
High-energy physics
Nuclear medicine
Geological prospecting
Gamma pulse spectroscopy
BGO [...]
2019-03-11мета-автор
Formation of porous structures in GaN/SiC heterostructures in light of the need for porous templates for improved GaN epitaxial growth has been studied. It has been observed that the built-in stress in the heterostructures greatly affects the process of porous structure formation. As a [...]
2018-01-30мета-автор
Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers, provides 808nm AlGaInP/GaAs laser wafer. AlGaInP laser epitaxial wafers are high-quality semiconductor materials that can emit light in semiconductor lasers. After made on the laser chip, these materials are energized and can emit light. Then, the electrical [...]
2016-06-13мета-автор
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Frequency Comb Generation From Stimulated Brillouin Scattering and Semiconductor Laser Diodes
Published by:
(Electrical Engineering) in The [...]
2019-10-31мета-автор
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[112-5° towards[11-1]] ±0.5°
4″
765
P/P
FZ ~100
SEMI Prime, TTV<3μm
n-type Si:P
[112-5° towards[11-1]] ±0.5°
4″
795
E/E
FZ >100
SEMI, in Empak, TTV<4μm, Lifetime>2,000μs
Intrinsic Si:-
[110]
4″
500
P/P
FZ >20,000
SEMI Test (Both sides with defects) @ [111] – Secondary 70.5° CCW from Primary
Intrinsic Si:-
[110] ±0.5°
4″
500
P/E
FZ >15,000
Prime
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<1μm
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<2μm, Groups of 5 wafers
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
4″
350
P/P
FZ >20,000
Prime, TTV<5μm
Intrinsic Si:-
[100]
4″
350
P/P
FZ >20,000
Prime, [...]
2019-03-05мета-автор