AlGaInP LED Chip Sepcification
· Orange LED Wafer Substrate:
P+GaAs
p-GaP
p-AlGaInP
MQW
n-AlGaInP
DBR n-ALGaAs/AlAs
Buffer
GaAs substrate
·Chip Sepcification (Base on 7mil*7mil chips)
Parameter
Chip Size
7mil(±1mil)*7mil(±1mil)
Thickness
7mil(±1mil)
P Electrode
U/L
N Electrode
AU
Structure
Such as right-shown
·Optical-elctric characters
Parameter
Condition
Min.
Typ
Max.
Unit
Forward voltage
If=10μA
1.35
┄
┄
V
Reverse voltage
If=20mA
┄
┄
2.2
V
Reverse current
V=10V
┄
┄
2
μm
Wavelength
If=20mA
565
┄
575
nm
Half wave width
If=20mA
┄
10
┄
nm
·Light intensity characters
Brightness code
LA
LB
LC
LD
LE
LF
LG
LH
IV(mcd)
10-15
15-20
20-25
25-30
30-35
35-40
40-50
50-60
Source:PAM-XIAMEN
If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email [...]
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
2″ Diameter Wafers [...]
2019-05-15meta-tác giả
PAM XIAMEN offers 6″ FZ Silicon Wafer-6
N Type/Phosphorus doped
Orientation (111)
Thickness 400±10μm
Resistivity 2000-5000Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤15μm
Bow/Warp ≤20μm
FLATNESS(FPD)≤5μm
Front Side: Chemical Mechanical
Polished
Back side: Damaged, with SiO2/Al2O3
Particle ≤10 @≥0.3㎛
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-18meta-tác giả
PAM XIAMEN offers DyScO3/GdScO3//TbScO3 crystal.
Crystal
Structure /Lattice Constant(A)
MP oC
Density, g/cm3
Growth Tech
DyScO3
Orthorombic a=5.44 b=5.71 c=7.89
2127
6.9
CZ
GdScO3
Orthorombic a=5.45 b=5.75 c=7.93
2127
6.6
CZ
TbScO3
Orthorhombic, a = 5.4543, b = 5.7233 c = 7.9147
2127
6.6
CZ
DyScO3 (110) 5x5x0.5mm 1sp (PAM210322-DYSCO3)
DyScO3 (110) 5x5x0.5mm 1sp”
DyScO3 (110) 5x5x0.5mm 2sp
DyScO3 (110) 10x10x0.5mm 1sp
DyScO3 (110) 10x10x0.5mm 2sp
DyScO3 (001) 10x10x0.5mm 1sp [...]
2019-05-20meta-tác giả
Actually, gallium oxide(Ga2O3) is not a new technology. Studies on gallium oxide applications in the field of power semiconductors are carried out by companies and research institutions all the time. And the gallium oxide material is mainly from Japan. With the development of Ga2O3 applications requirements becoming clearer, the performance requirements for high-power devices are getting [...]
2021-04-19meta-tác giả
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
76.2
N
Phos
FZ
-100
>3000
300-350
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
300-350
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
300-350
P/E
PRIME
76.2
N
Phos
CZ
-100
350-400
P/E/OX
PRIME
76.2
N
As
CZ
-100
.001-.005
350-400
P/E
PRIME
76.2
N
Sb
CZ
-100
.005-.02
350-400
P/E
PRIME
76.2
N
Phos
FZ
-100
>3000
350-400
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/DTOx
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/Ni
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/WTOx
76.2
N
Phos
CZ
-100
20-50
350-400
P/P
PRIME
76.2
N
Phos
CZ
-100
20-50
350-400
P/P
PRIME
76.2
N
Phos
CZ
-100
20-50
400-450
P/E
PRIME
76.2
N
Phos
CZ
-100
450-500
P/P
PRIME
76.2
N
Phos
CZ
-100
500-550
P/E
PRIME
76.2
N
Phos
CZ
-100
950-1000
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-tác giả