Effect of Ultraviolet Radiation on Conductivity of AlN
PAM-XIAMEN can provide AlN substrates with various sizes, specifications can be found in https://www.powerwaywafer.com/aln-substrate.html. Aluminum nitride (AlN) has a 6.1eV ultra wide bandgap, which is attractive for manufacturing high-power and high-voltage electronic products, and also has the potential for deep ultraviolet optoelectronics in the wavelength range of about 200nm. However, broadband gap [...]