InSb wafer

PAM-XIAMEN offers Compound Semiconductor InSb wafer – Indium antimonide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). Indium antimonide doped with isoelectronic(such as N doping) can reduce the defect density during the indium antimonide thin films manufacturing process.

  • Description

Product Description

PAM-XIAMEN offers Compound Semiconductor InSb wafer – Indium antimonide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). Indium antimonide doped with isoelectronic(such as N doping) can reduce the defect density during the indium antimonide thin films manufacturing process.

Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.

 
Wafer Specification
ItemSpecifications
Wafer Diameter2″50.5±0.5mm
3″76.2±0.4mm
4″1000.0±0.5mm
Crystal Orientation2″(111)AorB±0.1°
3″(111)AorB±0.1°
4″(111)AorB±0.1°
Thickness2″625±25um
3″ 800or900±25um
4″1000±25um
Primary flat length2″16±2mm
3″22±2mm
4″32.5±2.5mm
Secondary flat length2″8±1mm
3″11±1mm
4″18±1mm
Surface FinishP/E, P/P
PackageEpi-Ready,Single wafer container or CF cassette
Electrical and Doping Specification
Conduction Typen-typen-typen-typen-typep-type
DopantUndopedTelluriumLow telluriumHigh telluriumGenmanium
EPD cm-22″3″4″≤502″≤100
Mobility cm² V-1s-1≥4*105≥2.5*104≥2.5*105Not Specified8000-4000
Carrier Concentration cm-35*1013-3*1014(1-7)*10174*1014-2*1015≥1*10185*1014-3*1015

 

 

1)2″(50.8mm)InSb Wafer
Orientation:(100)
Type/Dopant:N/undoped
Diameter:50.8mm
Thickness:300±25µm;500um
Nc:<2E14a/cm3
Polish:SSP

2)2″(50.8mm)InSb Wafer
Orientation:(100)
Type/Dopant:N/Te
Diameter:50.8mm
Carrier Concentration: 0.8 – 2.1 x 1015 cm-3
Thickness:450+/- 25 um;525±25µm
EPD < 200 cm-2
Polish:SSP

3)2″(50.8mm)InSb Substrate
Orientation:(111) + 0.5°
Thickness:450+/- 50 um
Type/Dopant:N/undoped
Carrier Concentration: < 5 x 10^14 cm-3
EPD < 5 x 103 cm-2
Surface roughness: < 15 A
Bow/Warp: < 30 um
Polish:SSP

4)2″(50.8mm)InSb Substrate
Orientation:(111) + 0.5°
Type/Dopant:P/Ge
Polish:SSP

5)2″(50.8mm)Indium Antimonide Wafer
Thickness:525±25µm,
Orientation:[111A]±0.5°
Type/Dopant:N/Te
Ro=(0.020-0.028)Ohmcm,
Nc=(4-8)E14cm-3/cc,
u=(4.05E5-4.33E5)cm²/Vs,
EPD<100/cm²,
Mobility:4E5cm2/Vs
One side edge;
In(A) Face: Chemically-mechanically final polished to 0.1µm (Final Polish),
Sb(B) Face: Chemically-mechanically final polished to <5µm (Lasermark),
NOTE: Nc and Mobility are at 77ºK.
Polish:SSP;DSP

6)2″(50.8mm) GaSb
Thickness:525±25µm,
Orientation:[111B]±0.5°,
Type/Dopant:P/undoped;N/undoped
Polish:SSP;DSP

Surface Condition and other Specification
Indium Antimonide wafer can be offered as wafers with as-cut, etched or polished finishes with wide range of doping concentration and thickness. The InSb wafer could be high quality epi-ready finishing.

Orientation Specification

Indium antimonide surface orientations are supplied to an accuracy of +/- 0.5 degrees using a triple axis X-Ray diffractometer system. Indium antimonide substrates can also be supplied with very precise misorientations in any direction from the growth plane. The available InSb wafer orientation could be (100),(111), (110) or other orientation or mis degree.

Packaging condition

Polished wafer: individually sealed in two outer bags in inert atmosphere. Cassette shipments are available if required.
As-cut Wafer: Cassette shipment. (Glassine bag available on request).

Indium Antimonide Properties and Uses

The indium antimonide crystal structure is silver, brittle, and zinc blende structure. The indium antimonide lattice constant is 6.48 Å, and indium antimonide is a direct bandgap material with a narrow band gap of 0.18 eV. The indium antimonide conduction electron mobility is as high as 7800 cm2/V·s , which can be used to make infrared detectors, photomagnetic detectors and Hall devices.

Relative products:
InAs wafer
InSb wafer
InP wafer
GaAs wafer
GaSb wafer
GaP wafer

InSb Epi Wafer

 

You may also like…