PAM XIAMEN은 3인치 실리콘 웨이퍼를 제공합니다. 머티리얼 오리엔탈. 직경 두께(μm) 서핑. 비저항 Ωcm 설명 p형 Si:B [110] ±0.5° 3″ 381 P/E 0.085-0.115 SEMI 프라임, 1차 플랫 @ [111]±0.5°, 2차 @ [111] 109.5° CW 1차에서, Epak 단위 6, 7, 7 웨이퍼 카세트 p형 Si:B [110] ±0.3° 3″ 381 P/E 0.0448-0.0672 SEMI 프라임, 1차 @ [111], 2차 @ [111] 1차에서 109.5±2° CW , 하드 cst p형 Si:B [110] [...]
2019-03-06메타 작성자
PAM XIAMEN offers 3″ Prime EPI Wafer.
Details of Prime 3″ Silicon Wafer Specification
CZ SUBSTRATE:
Orientation : 111
OFF orientation : 3° – 4°
Type/Dopant : n/Sb
Resistivity Ω cm : <0.018
Diameter mm : 76.2 +/- 0.5
Flats : SEMI
Flat, location [...]
2019-07-03메타 작성자
GaN Substrates Offer High Performance At A Price
GaN substrates are manufactured by only a handful of companies at prices prohibitive to volume production, but offer great potential for high-performance devices. Richard Stevenson reports.The GaN component market was worth $1.35 billion in 2003 according to [...]
2013-03-21메타 작성자
When the In composition in the InGaAs material reaches 0.53, and Ga reaches 0.47, InGaAs / InP lattice matched makes it can form a heterojunction. The InGaAs / InP heterojunction structure utilizes the steps of the conduction band and valence band formed by the [...]
단결정 실리콘의 생산과정에서는 원료, 공법 등의 요인으로 인해 탄소, 산소 등의 불순물이 필연적으로 유입되며, 이는 단결정 실리콘의 성능에 직접적인 영향을 미칩니다. 예를 들어, 우리가 공급하는 어닐링된 실리콘 웨이퍼는 [...]
2022-06-29메타 작성자
Gallium Nitride (GaN) is the basic material of blue LED and has important applications in LED and ultraviolet laser.
PAM-XIAMEN can epitaxially grow GaN wafers for LED and LD. For more wafer specification please visit:https://www.powerwaywafer.com/gan-wafer/epitaxial-wafer.html. How do we grow GaN LED epiwafer on sapphire?
Please click [...]
2023-04-26메타 작성자