GaP의 웨이퍼

GaP의 웨이퍼

PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium phosphide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
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PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium phosphide wafer which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).

Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26eV(300K). The polycrystalline material has the appearance of pale orange pieces. Undoped single gallium phosphide crystal wafers appear clear orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water. Gallium phosphide wafers by doping sulfur or tellurium can produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor. Gallium phosphide wafer has applications in optical systems. Its refractive index is between 4.30 at 262 nm (UV), 3.45 at 550 nm (green) and 3.19 at 840 nm (IR). Gallium phosphide single crystal is the main substrate material for the preparation of red, green, yellow and orange visible light LEDs.

GaP의 웨이퍼와 기판의 사양
Conducion 유형 N 형
도펀트 S의 도핑
웨이퍼 직경 50.8 +/- 0.5mm의
크리스탈 방향 (111) +/- 0.5 °
플랫 오리엔테이션 111
평면 길이 17.5 +/- 2mm
캐리어 농도 (2-7) X 10 ^ 7 / cm3
RT에서 저항 0.05-0.4ohm.cm
유동성 100cm² / V.sec
에치 피트 밀도 3 * 10 ^ 5 / cm² 이상
레이저 마킹 요청에 따라
Suface Fnish 체육
두께 250 +/- 20um
에피 준비
패키지 단일 웨이퍼 용기 또는 카세트
 
In order to reduce GaP wafer defects, the solute synthesis diffusion method can be used for crystal growth, but the growth rate is slow and it is difficult to obtain large crystals. Currently, epitaxially grown films are mostly used in gallium phosphide device fabrication.

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