The vibrational energy of the molecule is larger than the rotational energy. When the vibrational energy level transition occurs, it is inevitably accompanied by the transition of the rotational energy level, so the pure vibrational spectrum cannot be measured, but only the vibrational-rotational spectrum [...]
2022-06-08мета-автор
PAM XIAMEN предлагает монокристалл SrTiO3. Монокристалл SrTiO3 обеспечивает хорошее соответствие решетки большинству материалов со структурой перовскита. Это отличная подложка для эпитаксиальных пленок из ВТС и многих оксидов. Он широко используется для изготовления специальных оптических окон и в качестве высококачественного напыления [...]
2019-05-14мета-автор
PAM XIAMEN offers 8″CZ Prime Silicon Wafer-2
8″ Silicon Wafer
CZ, <111>,
thickness 1.0 mm,
p-type
resistivity 1-80ohm.cm,
warp < 50 um,
single side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-16мета-автор
PAM XIAMEN offers 2″CZ Prime Silicon Wafer-3
Silicon wafer
dia 2 inch
thickness 280 um
P type boron doped or N doped
resistivity- 1-10 ohm cm
orientation-100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-12мета-автор
In the production process of single crystal silicon, impurities such as carbon and oxygen are inevitably introduced due to factors such as raw materials and methods, which directly affect the performance of single crystal silicon. For example, the annealed silicon wafer supplied by us, [...]
2022-06-29мета-автор
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
400
P/P
0.001-0.005
SEMI Prime
p-type Si:B
[100]
4″
500
P/P
0.001-0.005
SEMI Prime, Wafers with striation marks
p-type Si:B
[100]
4″
525
P/P
0.001-0.005
SEMI Prime, TTV<5μm, Bow<15μm, Warp<30μm
p-type Si:B
[100]
4″
525
P/E
0.001-0.002
SEMI Prime, TTV<4μm
p-type Si:B
[100]
4″
525
P/E
0.001-0.005
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
525
BROKEN
0.001-0.005
Broken wafer (shattered into many pieces)
p-type Si:B
[100]
4″
800
C/C
0.001-0.005
SEMI, With striation marks
p-type Si:B
[100]
4″
?
P/P
SEMI Test
p-type Si:B
[100]
4″
375
P/E
<0.0015 {0.00091-0.00099}
SEMI Prime, TTV<3μm
p-type Si:B
[111]
4″
350
P/E
2-3
Prime, NO Flats
p-type Si:B
[111]
4″
1000
P/P
1-10
SEMI Prime, Cassettes of 10 [...]
2019-03-05мета-автор