GaN based LED Epitaxial Wafer
PAM-XIAMEN’s GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.
- Description
Product Description
InGaN/GaN(gallium nitride) based LED Epitaxial Wafer
As LED wafer manufacturer,we offer GaN Epi LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers.it is by MOCVD with PSS or flat sapphire for LCD back light, mobile,electronic or UV(ultraviolet), with blue or green or red emission,including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.
GaN on Al2O3-2” epi wafer Specification(LED Epitaxial wafer)
White: 445~460 nm |
Blue: 465~475 nm |
Green: 510~530 nm |
1. Growth Technique – MOCVD
2.Wafer diameter: 50.8mm
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3) or Flat Sapphire
4.Wafer pattern size: 3X2X1.5μm
5.Wafer structure:
Structure layers | Thickness(μm) |
p-GaN | 0.2 |
p-AlGaN | 0.03 |
InGaN/GaN(active area) | 0.2 |
n-GaN | 2.5 |
u- GaN | 3.5 |
Al2O3 (Substrate) | 430 |
6.Wafer parameters to make chips:
Item | Color | Chip Size | Characteristics | Appearance | |
PAM1023A01 | Blue | 10mil x 23mil | ![]() |
Lighting | |
Vf = 2.8~3.4V | LCD backlight | ||||
Po = 18~25mW | Mobile appliances | ||||
Wd = 450~460nm | Consumer electronic | ||||
PAM454501 | Blue | 45mil x 45mil | Vf = 2.8~3.4V | ![]() |
General lighting |
Po = 250~300mW | LCD backlight | ||||
Wd = 450~460nm | Outdoor display |
7.Application of LED epitaixal wafer:*If you need to know more detail information of Blue LED Chip, please contact with our sales departments
Lighting
LCD back light
Mobile appliances
Consumer electronic
8.Specification of LED Wafer as an example:
Spec PAM190730-LED
– size : 4 inch
– WD : 455 ± 10nm
– brightness : > 90mcd
– VF : < 3.3V
– n-GaN Thickness : <4.1㎛
– u-GaN thickness : <2.2㎛
– substrate : patterned sapphire substrate (PSS)
9.GaAs(Gallium arsenide)based LED Wafer:
Regarding GaAs LED wafer, they are grown by MOCVD,see below wavelength of GaAs LED wafer:
Red:585nm,615nm,620~630nm
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573nm
10. Definition of LED wafer:
What we offer is bare LED epi wafer or not processed wafer without lithography processes, n- and metals contacts, etc. And you can fabricate the LED chip using your fabrication equipment for different application such as nano optoelectronics research.
For these detail GaAs LED wafer specs,please visit:GaAs Epi Wafer for LED
For UV LED wafer specs,please visit:UV LED Epi Wafer
For LED wafer on silicon specs,please visit:LED Wafer on Silicon
For Blue GaN LD Wafer specs,please visit: Blue GaN LD Wafer