GaN based LED Epitaxial Wafer

GaN Templates GaN Templates
GaN HEMT Epitaxial Wafer GaN HEMT Epitaxial Wafer
GaN based LED Epitaxial Wafer

GaN based LED Epitaxial Wafer

PAM-XIAMEN’s GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

Category: Tags: , , , , , , ,
  • Description

Product Description

GaN(gallium nitride) based LED Epitaxial Wafer

As LED wafer manufacturer,we offer LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers.it is by MOCVD with PSS or flat sapphire for LCD back light, mobile,electronic or UV(ultraviolet), with blue or green or red emission,including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.

GaN on Al2O3-2” epi wafer Specification(LED Epitaxial wafer)

White： 445～460 nm

Blue：  465～475 nm                                               

Green： 510～530 nm                                                 

1. Growth Technique – MOCVD
2.Wafer diameter: 50.8mm
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3)
4.Wafer pattern size: 3X2X1.5μm
5.Wafer structure:

Structure layers

Thickness(μm) 

p-GaN

0.2

p-AlGaN

0.03

InGaN/GaN(active area)

0.2

n-GaN

2.5

u- GaN

3.5

Al2O3 (Substrate)

430

6.Wafer parameters to make chips:

Item

Color

Chip Size

Characteristics

Appearance

　

PAM1023A01

Blue

10mil x 23mil

　

　

Lighting

Vf = 2.8~3.4V

LCD backlight

Po = 18~25mW

Mobile appliances

Wd  = 450~460nm

Consumer electronic

PAM454501

Blue

45mil x 45mil

Vf = 2.8~3.4V

　

General lighting

Po = 250~300mW

LCD backlight

Wd = 450~460nm

Outdoor display

*If you need to know more detail information of Blue LED Chip, please contact with our sales departments

7.Application of LED epitaixal wafer:
Lighting
LCD back light
Mobile appliances
Consumer electronic

PAM-XIAMEN’s GaN-based epitaxial wafers(Epi Wafer) is for ultra high brightness blue and green light emitting diodes (LED)

GaAs(Gallium arsenide)based LED Wafer:

Regarding GaAs LED wafer, they are grown by MOCVD,see below wavelength of GaAs LED wafer:

Red:585nm,615nm,620～630nm
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573nm
For these detail GaAs LED wafer specs,please visit:GaAs Epi Wafer for LED

For UV LED wafer specs,please visit:UV LED Epi Wafer  

For LED wafer on silicon specs,please visit:LED Wafer on Silicon 

For Blue GaN LD Wafer specs,please visit: Blue GaN LD Wafer

*Laser Structure on 2 inch GaN (0001) substrate or sapphire substrate is available.

You may also like…

  • Freestanding GaN substrate
    Read More
    Quick View

    Freestanding GaN substrate

    PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

  • GaN HEMT Epitaxial Wafer
    Read More
    Quick View

    GaN HEMT Epitaxial Wafer

    Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

  • Ge(Germanium) Single Crystals and Wafers
    Read More
    Quick View

    Ge(Germanium) Single Crystals and Wafers
    PAM-XIAMEN offers semiconductor materials,single crystal (Ge)Germanium Wafer grown by VGF / LEC
  •
    Read More
    Quick View

    GaAs Epiwafer

    We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.

  • SiC (Silicon Carbide) Wafers
    Read More
    Quick View

    SiC Substrate

    PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology.

  • InSb waferInSb wafer
    Read More
    Quick View

    InSb wafer

    PAM-XIAMEN offers InSb wafer – Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

  • Cz Mono-Crystalline Silicon
    Read More
    Quick View

    Cz Mono-Crystalline Silicon

    CZ-Silicon

    The heavily/lightly-doped CZ mono-crystalline silicon is suitable for producing various integrated circuits (IC), diodes, triodes, green-energy solar panel. The special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.

  • GaN Templates
    Read More
    Quick View

    GaN Templates
    PAM-XIAMEN’s Template Products consist of crystalline layers of (gallium nitride)GaN templates, (aluminum nitride)AlN template,(aluminum gallium nitride) AlGaN templates and (indium gallium nitride) InGaN templates, which are deposited on sapphire