GaN based LED Epitaxial Wafer

Product Description

GaN(gallium nitride) based LED Epitaxial Wafer

As LED wafer manufacturer,we offer LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers.it is by MOCVD with PSS or flat sapphire for LCD back light, mobile,electronic or UV(ultraviolet), with blue or green or red emission,including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.

GaN on Al2O3-2” epi wafer Specification(LED Epitaxial wafer)

1. Growth Technique – MOCVD
2.Wafer diameter: 50.8mm
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3)
4.Wafer pattern size: 3X2X1.5μm
5.Wafer structure:

6.Wafer parameters to make chips:

*If you need to know more detail information of Blue LED Chip, please contact with our sales departments

7.Application of LED epitaixal wafer:
Lighting
LCD back light
Mobile appliances
Consumer electronic

PAM-XIAMEN’s GaN-based epitaxial wafers(Epi Wafer) is for ultra high brightness blue and green light emitting diodes (LED)

GaAs(Gallium arsenide)based LED Wafer:

Regarding GaAs LED wafer, they are grown by MOCVD,see below wavelength of GaAs LED wafer:

Red:585nm,615nm,620～630nm
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573nm
For these detail GaAs LED wafer specs,please visit:GaAs Epi Wafer for LED

For UV LED wafer specs,please visit:UV LED Epi Wafer  

For LED wafer on silicon specs,please visit:LED Wafer on Silicon 

For Blue GaN LD Wafer specs,please visit: Blue GaN LD Wafer

*Laser Structure on 2 inch GaN (0001) substrate or sapphire substrate is available.