Fristående GaN-substrat

Fristående GaN-substrat

PAM-XIAMEN har etablerat den tillverkningsteknik för fristående (galliumnitrid) GaN substratskivan, som är för UHB-LED och LD. Vuxit med hydrid ångfasepitaxi (HVPE) teknik, har Vår GaN-substrat med låg defektdensitet.

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Fristående GaN-substrat

As a leading GaN substrate supplier, PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substratbricka  which is Bulk GaN substrate for UHB-LED, LD and fabrication as MOS-based devices. Grown by hydride vapour phase epitaxy (HVPE) technology, our GaN-substrat for III-nitride devices has  low defect density and less or free macro defect density. The GaN substrate thickness is 330~530μm.

In addition to power devices, gallium nitride semiconductor substrates are increasingly used in the manufacture of white light LEDs because the GaN LED substrates provide improved electrical characteristics and their performance exceeds current devices. Moreover, the rapid development of gallium nitride substrate technology has led to the development of high-efficiency GaN free standing substrates with low defect density and free macro defect density. Therefore, such GaN substrates can be increasingly used to white LEDs. As a result, the bulk GaN substrate market is growing rapidly. By the way, bulk GaN wafer can be used for testing vertical power device concepts.

Specifikation av Fristående GaN-substrat

 Här visar detaljspecifikation:

4″ N type Si doped GaN(Gallium Nitride) Free-standing Substrate

Punkt PAM-FS-GaN100-N+
ledningstyp N type/Si doped
Storlek 4″(100)+/-1mm
Tjocklek 480+/-50
Orientering C-axeln (0001) +/- 0.5o
Primär Flat Plats (10-10)+/-0.5o
Primär Flat Längd 32+/-1mm
Sekundär Flat Plats (1-210)+/-3o
Sekundär Flat Längd 18+/-1mm
Resistivitet (300K) <0.05Ω·cm
dislokation Densitet <5x106cm-2
FWHM <=100arc.sec
TTV <=30um
ROSETT <=+/-30um
Ytfinish Front Surface:Ra<=0.3nm.Epi-ready polished
Baksidan: 1.Fine marken
2.Polished.
användbar Area ≥ 90 %

 

4″ N type Undoped GaN(Gallium Nitride) Free-standing Substrate

Punkt PAM-FS-GaN100-N-
ledningstyp N type/undoped
Storlek 4″(100)+/-1mm
Tjocklek 480+/-50
Orientering C-axeln (0001) +/- 0.5o
Primär Flat Plats (10-10)+/-0.5o
Primär Flat Längd 32+/-1mm
Sekundär Flat Plats (1-210)+/-3o
Sekundär Flat Längd 18+/-1mm
Resistivitet (300K) <0.5Ω • cm
dislokation Densitet <5x106cm-2
FWHM <=100arc.sec
TTV <=30um
ROSETT <=+/-30um
Ytfinish Front Surface:Ra<=0.3nm.Epi-ready polished
Baksidan: 1.Fine marken
2.Polished.
användbar Area ≥ 90 %

 

4″ Semi-Insulating GaN(Gallium Nitride) Free-standing Substrate

Punkt PAM-FS-GaN100-SI
ledningstyp Semi-Insulating
Storlek 4″(100)+/-1mm
Tjocklek 480+/-50
Orientering C-axeln (0001) +/- 0.5o
Primär Flat Plats (10-10)+/-0.5o
Primär Flat Längd 32+/-1mm
Sekundär Flat Plats (1-210)+/-3o
Sekundär Flat Längd 18+/-1mm
Resistivitet (300K) >10^6Ω·cm
dislokation Densitet <5x106cm-2
FWHM <=100arc.sec
TTV <=30um
ROSETT <=+/-30um
Ytfinish Front Surface:Ra<=0.3nm.Epi-ready polished
Baksidan: 1.Fine marken
2.Polished.
användbar Area ≥ 90 %

 

2″ Si doped GaN(Gallium Nitride) Free-standing Substrate

Punkt PAM-FS-GaN50-N+
ledningstyp N type/Si doped
Storlek 2 "(50,8) +/- 1 mm
Tjocklek 400+/-50
Orientering C-axeln (0001) +/- 0.5o
Primär Flat Plats (10-10)+/-0.5o
Primär Flat Längd 16 +/- 1 mm
Sekundär Flat Plats (1-210)+/-3o
Sekundär Flat Längd 8 +/- 1 mm
Resistivitet (300K) <0.05Ω·cm
dislokation Densitet <5x106cm-2
FWHM <=100arc.sec
TTV <= 15um
ROSETT <=+/-20um
Ytfinish Front Surface:Ra<=0.3nm.Epi-ready polished
                             Back Surface:1.Fine ground 
                                                    2.Polished.
Usable Area  ≥ 90 % 


 

2″ Undoped GaN(Gallium Nitride) Free-standing Substrate

Punkt PAM-FS-GaN50-N-
ledningstyp N type/undoped
Storlek 2 "(50,8) +/- 1 mm
Tjocklek 400+/-50
Orientering C-axeln (0001) +/- 0.5o
Primär Flat Plats (10-10)+/-0.5o
Primär Flat Längd 16 +/- 1 mm
Sekundär Flat Plats (1-210)+/-3o
Sekundär Flat Längd 8 +/- 1 mm
Resistivitet (300K) <0.5Ω • cm
dislokation Densitet <5x106cm-2
FWHM <=100arc.sec
TTV <= 15um
ROSETT <=+/-20um
Ytfinish Front Surface:Ra<=0.3nm.Epi-ready polished
                             Back Surface:1.Fine ground 
                                                      2.Polished.
Usable Area  ≥ 90 % 


 

2″ Semi-Insulating GaN(Gallium Nitride) Free-standing Substrate

Punkt PAM-FS-GaN50-SI
ledningstyp Semi-Insulating
Storlek 2 "(50,8) +/- 1 mm
Tjocklek 400+/-50
Orientering C-axeln (0001) +/- 0.5o
Primär Flat Plats (10-10)+/-0.5o
Primär Flat Längd 16 +/- 1 mm
Sekundär Flat Plats (1-210)+/-3o
Sekundär Flat Längd 8 +/- 1 mm
Resistivitet (300K) >10^6Ω·cm
dislokation Densitet <5x106cm-2
FWHM <=100arc.sec
TTV <= 15um
ROSETT <=+/-20um
Ytfinish Front Surface:Ra<=0.3nm.Epi-ready polished
                             Back Surface:1.Fine ground 
                                                      2.Polished.
Usable Area  ≥ 90 % 

15mm, 10mm, 5mmFriståendeGaN Substrate

Punkt PAM-FS-GaN15-N PAM-FS-GaN15-SI
PAM-FS-GaN10-N PAM-FS-GaN10-SI
PAM-FS-GaN5-N PAM-FS-GaN5-SI
ledningstyp N-typ Halvisolerande
Storlek 14.0mm*15mm   10.0mm*10.5mm   5.0*5.5mm
Tjocklek 330-450um
Orientering C-axeln (0001) +/- 0.5o
Primär Flat Plats  
Primär Flat Längd  
Sekundär Flat Plats  
Sekundär Flat Längd  
Resistivitet (300K) <0.5Ω • cm > 106Ω • cm
dislokation Densitet <5x106cm-2
Marco Defect Densitet 0cm-2
TTV <= 15um
ROSETT <= 20um
Ytfinish Framsida: Ra <0.2nm.Epi färdiga polerad
  Baksidan: 1.Fine marken
    2.Rough slipas
användbar Area ≥ 90%


            

Notera:

Validation Wafer: Considering convenience of usage, PAM-XIAMEN offers 2″ Sapphire Validation wafer for below 2″ size Freestanding GaN Substrate

Tillämpning av GaN Substrate

Solid State Lighting: GaN anordningar används såsom ultrahög ljusstyrka lysdioder (LED), TV-apparater, bilar och allmän belysning

DVD Storage: Blue laser diodes

Power Device: Devices fabricated on GaN bulk substrate are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites


Pure Gallium Nitride Substrate Ideal for III-Nitrides re-growth

Trådlösa basstationer: RF effekttransistorer

Trådlöst bredband: högfrekventa MMIC, RF-kretsar MMIC

Trycksensorer: MEMS

Värme Sensorer: Pyro-elektriska detektorer

Power Conditioning: Blandad signal GaN / Si Integration

Automotive Electronics: Hög temperatur elektronik

Kraftledningar: Högspänning elektronik

Frame Sensorer: UV-detektorer

Solar Cells: GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride

(InGaN) alloys perfect for creating solar cell material. Because of this advantage, InGaN solar cells grown on GaN substrates are poised to become one of the most important    new applications and growth market for GaN substrate wafers.

Ideal for HEMTs, FETs

   GaN Schottky diode project: We accept custom spec of Schottky diodes fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types.
   Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au.
We will offer test reports, please see below an example:

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