Fristående GaN-substrat
PAM-XIAMEN har etablerat den tillverkningsteknik för fristående (galliumnitrid) GaN substratskivan, som är för UHB-LED och LD. Vuxit med hydrid ångfasepitaxi (HVPE) teknik, har Vår GaN-substrat med låg defektdensitet.
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Fristående GaN-substrat
As a leading GaN substrate supplier, PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substratbricka which is Bulk GaN substrate for UHB-LED, LD and fabrication as MOS-based devices. Grown by hydride vapour phase epitaxy (HVPE) technology, our GaN-substrat for III-nitride devices has low defect density and less or free macro defect density. The GaN substrate thickness is 330~530μm.
In addition to power devices, gallium nitride semiconductor substrates are increasingly used in the manufacture of white light LEDs because the GaN LED substrates provide improved electrical characteristics and their performance exceeds current devices. Moreover, the rapid development of gallium nitride substrate technology has led to the development of high-efficiency GaN free standing substrates with low defect density and free macro defect density. Therefore, such GaN substrates can be increasingly used to white LEDs. As a result, the bulk GaN substrate market is growing rapidly. By the way, bulk GaN wafer can be used for testing vertical power device concepts.
Specifikation av Fristående GaN-substrat
Här visar detaljspecifikation:
4″ N type Si doped GaN(Gallium Nitride) Free-standing Substrate
Punkt | PAM-FS-GaN100-N+ |
ledningstyp | N type/Si doped |
Storlek | 4″(100)+/-1mm |
Tjocklek | 480+/-50 |
Orientering | C-axeln (0001) +/- 0.5o |
Primär Flat Plats | (10-10)+/-0.5o |
Primär Flat Längd | 32+/-1mm |
Sekundär Flat Plats | (1-210)+/-3o |
Sekundär Flat Längd | 18+/-1mm |
Resistivitet (300K) | <0.05Ω·cm |
dislokation Densitet | <5x106cm-2 |
FWHM | <=100arc.sec |
TTV | <=30um |
ROSETT | <=+/-30um |
Ytfinish | Front Surface:Ra<=0.3nm.Epi-ready polished |
— | Baksidan: 1.Fine marken |
— | 2.Polished. |
användbar Area | ≥ 90 % |
4″ N type Undoped GaN(Gallium Nitride) Free-standing Substrate
Punkt | PAM-FS-GaN100-N- |
ledningstyp | N type/undoped |
Storlek | 4″(100)+/-1mm |
Tjocklek | 480+/-50 |
Orientering | C-axeln (0001) +/- 0.5o |
Primär Flat Plats | (10-10)+/-0.5o |
Primär Flat Längd | 32+/-1mm |
Sekundär Flat Plats | (1-210)+/-3o |
Sekundär Flat Längd | 18+/-1mm |
Resistivitet (300K) | <0.5Ω • cm |
dislokation Densitet | <5x106cm-2 |
FWHM | <=100arc.sec |
TTV | <=30um |
ROSETT | <=+/-30um |
Ytfinish | Front Surface:Ra<=0.3nm.Epi-ready polished |
— | Baksidan: 1.Fine marken |
— | 2.Polished. |
användbar Area | ≥ 90 % |
4″ Semi-Insulating GaN(Gallium Nitride) Free-standing Substrate
Punkt | PAM-FS-GaN100-SI |
ledningstyp | Semi-Insulating |
Storlek | 4″(100)+/-1mm |
Tjocklek | 480+/-50 |
Orientering | C-axeln (0001) +/- 0.5o |
Primär Flat Plats | (10-10)+/-0.5o |
Primär Flat Längd | 32+/-1mm |
Sekundär Flat Plats | (1-210)+/-3o |
Sekundär Flat Längd | 18+/-1mm |
Resistivitet (300K) | >10^6Ω·cm |
dislokation Densitet | <5x106cm-2 |
FWHM | <=100arc.sec |
TTV | <=30um |
ROSETT | <=+/-30um |
Ytfinish | Front Surface:Ra<=0.3nm.Epi-ready polished |
— | Baksidan: 1.Fine marken |
— | 2.Polished. |
användbar Area | ≥ 90 % |
2″ Si doped GaN(Gallium Nitride) Free-standing Substrate
Punkt | PAM-FS-GaN50-N+ | |||
ledningstyp | N type/Si doped | |||
Storlek | 2 "(50,8) +/- 1 mm | |||
Tjocklek | 400+/-50 | |||
Orientering | C-axeln (0001) +/- 0.5o | |||
Primär Flat Plats | (10-10)+/-0.5o | |||
Primär Flat Längd | 16 +/- 1 mm | |||
Sekundär Flat Plats | (1-210)+/-3o | |||
Sekundär Flat Längd | 8 +/- 1 mm | |||
Resistivitet (300K) | <0.05Ω·cm | |||
dislokation Densitet | <5x106cm-2 | |||
FWHM | <=100arc.sec | |||
TTV | <= 15um | |||
ROSETT | <=+/-20um | |||
Ytfinish | Front Surface:Ra<=0.3nm.Epi-ready polished | |||
Back Surface:1.Fine ground | ||||
2.Polished. | ||||
Usable Area | ≥ 90 % |
2″ Undoped GaN(Gallium Nitride) Free-standing Substrate
Punkt | PAM-FS-GaN50-N- | ||||
ledningstyp | N type/undoped | ||||
Storlek | 2 "(50,8) +/- 1 mm | ||||
Tjocklek | 400+/-50 | ||||
Orientering | C-axeln (0001) +/- 0.5o | ||||
Primär Flat Plats | (10-10)+/-0.5o | ||||
Primär Flat Längd | 16 +/- 1 mm | ||||
Sekundär Flat Plats | (1-210)+/-3o | ||||
Sekundär Flat Längd | 8 +/- 1 mm | ||||
Resistivitet (300K) | <0.5Ω • cm | ||||
dislokation Densitet | <5x106cm-2 | ||||
FWHM | <=100arc.sec | ||||
TTV | <= 15um | ||||
ROSETT | <=+/-20um | ||||
Ytfinish | Front Surface:Ra<=0.3nm.Epi-ready polished | ||||
Back Surface:1.Fine ground | |||||
2.Polished. | |||||
Usable Area | ≥ 90 % |
2″ Semi-Insulating GaN(Gallium Nitride) Free-standing Substrate
Punkt | PAM-FS-GaN50-SI | ||||
ledningstyp | Semi-Insulating | ||||
Storlek | 2 "(50,8) +/- 1 mm | ||||
Tjocklek | 400+/-50 | ||||
Orientering | C-axeln (0001) +/- 0.5o | ||||
Primär Flat Plats | (10-10)+/-0.5o | ||||
Primär Flat Längd | 16 +/- 1 mm | ||||
Sekundär Flat Plats | (1-210)+/-3o | ||||
Sekundär Flat Längd | 8 +/- 1 mm | ||||
Resistivitet (300K) | >10^6Ω·cm | ||||
dislokation Densitet | <5x106cm-2 | ||||
FWHM | <=100arc.sec | ||||
TTV | <= 15um | ||||
ROSETT | <=+/-20um | ||||
Ytfinish | Front Surface:Ra<=0.3nm.Epi-ready polished | ||||
Back Surface:1.Fine ground | |||||
2.Polished. | |||||
Usable Area | ≥ 90 % |
15mm, 10mm, 5mmFriståendeGaN Substrate
Punkt | PAM-FS-GaN15-N | PAM-FS-GaN15-SI | |
PAM-FS-GaN10-N | PAM-FS-GaN10-SI | ||
PAM-FS-GaN5-N | PAM-FS-GaN5-SI | ||
ledningstyp | N-typ | Halvisolerande | |
Storlek | 14.0mm*15mm 10.0mm*10.5mm 5.0*5.5mm | ||
Tjocklek | 330-450um | ||
Orientering | C-axeln (0001) +/- 0.5o | ||
Primär Flat Plats | |||
Primär Flat Längd | |||
Sekundär Flat Plats | |||
Sekundär Flat Längd | |||
Resistivitet (300K) | <0.5Ω • cm | > 106Ω • cm | |
dislokation Densitet | <5x106cm-2 | ||
Marco Defect Densitet | 0cm-2 | ||
TTV | <= 15um | ||
ROSETT | <= 20um | ||
Ytfinish | Framsida: Ra <0.2nm.Epi färdiga polerad | ||
Baksidan: 1.Fine marken | |||
2.Rough slipas | |||
användbar Area | ≥ 90% |
Notera:
Validation Wafer: Considering convenience of usage, PAM-XIAMEN offers 2″ Sapphire Validation wafer for below 2″ size Freestanding GaN Substrate
Tillämpning av GaN Substrate
Solid State Lighting: GaN anordningar används såsom ultrahög ljusstyrka lysdioder (LED), TV-apparater, bilar och allmän belysning
DVD Storage: Blue laser diodes
Power Device: Devices fabricated on GaN bulk substrate are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites
Pure Gallium Nitride Substrate Ideal for III-Nitrides re-growth
Trådlösa basstationer: RF effekttransistorer
Trådlöst bredband: högfrekventa MMIC, RF-kretsar MMIC
Trycksensorer: MEMS
Värme Sensorer: Pyro-elektriska detektorer
Power Conditioning: Blandad signal GaN / Si Integration
Automotive Electronics: Hög temperatur elektronik
Kraftledningar: Högspänning elektronik
Frame Sensorer: UV-detektorer
Solar Cells: GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride
(InGaN) alloys perfect for creating solar cell material. Because of this advantage, InGaN solar cells grown on GaN substrates are poised to become one of the most important new applications and growth market for GaN substrate wafers.
Ideal for HEMTs, FETs