Fristående GaN-substrat

Produktbeskrivning

Fristående GaN-substrat

As a leading GaN substrate supplier, PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substratbricka  which is Bulk GaN substrate for UHB-LED, LD and fabrication as MOS-based devices. Grown by hydride vapour phase epitaxy (HVPE) technology, our GaN-substrat for III-nitride devices has  low defect density and less or free macro defect density. The GaN substrate thickness is 330~530μm.

In addition to power devices, gallium nitride semiconductor substrates are increasingly used in the manufacture of white light LEDs because the GaN LED substrates provide improved electrical characteristics and their performance exceeds current devices. Moreover, the rapid development of gallium nitride substrate technology has led to the development of high-efficiency GaN free standing substrates with low defect density and free macro defect density. Therefore, such GaN substrates can be increasingly used to white LEDs. As a result, the bulk GaN substrate market is growing rapidly. By the way, bulk GaN wafer can be used for testing vertical power device concepts.

Specifikation av Fristående GaN-substrat

 Här visar detaljspecifikation:

4″ N type Si doped GaN（Gallium Nitride) Free-standing Substrate

4″ N type Undoped GaN（Gallium Nitride) Free-standing Substrate

4″ Semi-Insulating GaN（Gallium Nitride) Free-standing Substrate

2″ Si doped GaN（Gallium Nitride) Free-standing Substrate

2″ Undoped GaN（Gallium Nitride) Free-standing Substrate

2″ Semi-Insulating GaN（Gallium Nitride) Free-standing Substrate

15mm, 10mm, 5mmFriståendeGaN Substrate

Notera:

Validation Wafer: Considering convenience of usage, PAM-XIAMEN offers 2″ Sapphire Validation wafer for below 2″ size Freestanding GaN Substrate

Tillämpning av GaN Substrate

Solid State Lighting: GaN anordningar används såsom ultrahög ljusstyrka lysdioder (LED), TV-apparater, bilar och allmän belysning

DVD Storage: Blue laser diodes

Power Device: Devices fabricated on GaN bulk substrate are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites

Pure Gallium Nitride Substrate Ideal for III-Nitrides re-growth

Trådlösa basstationer: RF effekttransistorer

Trådlöst bredband: högfrekventa MMIC, RF-kretsar MMIC

Trycksensorer: MEMS

Värme Sensorer: Pyro-elektriska detektorer

Power Conditioning: Blandad signal GaN / Si Integration

Automotive Electronics: Hög temperatur elektronik

Kraftledningar: Högspänning elektronik

Frame Sensorer: UV-detektorer

Solar Cells: GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride

(InGaN) alloys perfect for creating solar cell material. Because of this advantage, InGaN solar cells grown on GaN substrates are poised to become one of the most important    new applications and growth market for GaN substrate wafers.

Ideal for HEMTs, FETs